Wild-Goose-WG3401
| Part # | Wild-Goose-WG3401 |
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WG3401
30V P-Channel MOSFET
SOT-23
WG3401
30V P-Channel MOSFET
Features:
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge :Qg=
6.4
nC (Typ.).
□
BVDSS= -30V,I
= -4A
D
□
R (on)
:
7
5
m
Ω (Max) @V
=-4.5V
DS
G
□
100% Avalanche
T
e
sted
MARKING:
A19T
Absolute Maximum Ratings (T
A
=25ºC unless otherwise noted)
Parameter
ymbol
Limit
-30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
±12
V
T
C
=25ºC
T
C
=70ºC
-4.0
Drain Current
a
I
D
A
-2.5
Drain Current –Pulsed
a
I
DM
P
D
-16.8
A
W
Power Dissipation (T
C
=25ºC)
1.56
Power Dissipation – Derate above 25
Storage Temperature Range
0.012
-55 ~ +150
-55 ~ +150
90
W/
C
º
C
º
T
STG
T
J
Operating Junction Temp
ture Range
Thermal Resistance, Junction-to-Ambient1
C
º
R
θJA
ºC/W
WildGoose Semiconductor
Rev. A1.0,June,2015
1
WG3401
30V P-Channel MOSFET
Electrical Characteristics (T
A
=25ºC unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage
Drain Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=-250µA
V
DS
=-24V, V
GS
=0V
V
GS
=±12V, V
DS
=0V
30
—
—
-30*
—
—
-1
V
T
J
=25°C
µA
nA
Gate-Body Leakage
I
GSS
—
±100
On Characteristics
a
Gate Threshold Voltage
V
GS(th)
R
DS(on)
gfs
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-10V, I
D
=-4.2A
V
GS
=-4.5V, I
D
=-3.5A
V
GS
=-2.5V, I
D
=-2.0A
V
DS
=-10V, I
D
=-3A
-0.7
—
—
50
62
80
5.5
-1.3
60
V
mΩ
mΩ
mΩ
S
—
—
Drain-Source On-State Resistance
75
110
—
Forward Transconductance
Drain-Source Diode Characteristics
a
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Dynamic Characteristics
b
Input Capacitance
—
I
S
—
—
—
—
—
—
-4.2
-16.8
-1.0
A
A
V
V
G
=V
D
=0V, Force Current
I
SM
V
SD
V
GS
=0V, I
S
=-1.0A
T
J
=25
℃
Ciss
Coss
Crss
—
—
—
515
55
745
80
pF
pF
pF
Output Capacitance
V
DS
=
–
10V, V
GS
=0V, F=1MHz
V
DS
=-10V, V
GS
=-4.5V, I
D
=-3A
Reverse Transfer Capacitance
Switching Characteristics
b
Total Gate Charge
20
30
Qg
Q
s
Qgd
Td(on)
Tr
—
—
—
—
—
—
—
6.4
0.9
9
1
nC
nC
nC
ns
ns
ns
ns
Gate-Source Charge
Gate-Drain Charge
1.6
3
Turn-On Delay Time
5
9
Rise Time
17.4
40.7
11.4
33
80
23
V
DD
=-10V, V
GS
=-4.5V,
R
G
=25Ω, I
D
=-1A
Turn-Off Delay Time
Td(off)
Tf
Fall Time
Notes: a. Repetitive Rat
ulsed width limited by maximum junction temperature.
b. Pulse test: pulse width ≤ 300us, duty cycle ≤ 2%. Essential independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
WildGoose Semiconductor
Rev. A1.0,June,2015
2
WG3401
30V P-Channel MOSFET
Typical Characteristics
t
on
t
r
t
off
t
f
t
d(on)
V
OUT
V
IN
t
d(off)
90%
90%
INVERTED
0%
%
10%
50%
50
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:S
ching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dis
ion
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
WildGoose Semiconductor
Rev. A1.0,June,2015
3
WG3401
30V P-Channel MOSFET
Typical Characteristics
(Continued)
Vgs Gate-Source Voltage (V)
T
J
-Junction
perature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson
gs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
WildGoose Semiconductor
Rev. A1.0,June,2015
4
WG3401
30V P-Channel MOSFET
Typical Characteristics
(Continued)
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figur
4 Normalized Maximum Transient Thermal Impedance
WildGoose Semiconductor
Rev. A1.0,June,2015
5
