Wild-Goose-WG3415
| Part # | Wild-Goose-WG3415 |
Download  | Wild-Goose-WG3415 |
WG
3415
20V P-Channel MOSFET
SOT-23
WG
3415
20V P-Channel MOSFET
Features:
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge :Qg=
12
nC (Typ.).
G
S
1
3
D
2
□
BVDSS=-20V,I =-
4
A
D
□
R (on)
:
4
5
m
Ω
(
Max) @V
=-4.5V
DS
G
Marking:
A
Top View
□
100% Avalanche
T
e
sted
Absolute Maximum Ratings (TA=25
℃
unless oth
wise noted)
Parameter Symbol
Limit
-20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
DS
V
GS
I
D
±10
-4
V
A
Drain Current-Pulsed (Note 1)
-30
A
I
DM
Maximum Power Dissipation
1.4
W
℃
P
D
Operating Junction and Storage Tem
ure Range
-55
T
o
1
50
T
J
,T
STG
Thermal Characteris
c
Thermal Resistance,Junct
o-Ambient (Note 2)
R
θ
JA
89.3
℃
/W
WildGoose Semiconductor
Rev. A1.0,June,2015
1
WG
3415
20V P-Channel MOSFET
Electrical Characteristics (TA=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
BV
DSS
I
DSS
V
GS
=0V I
D
=-250
μ
A
V
DS
=-20V,V
GS
=0V
V
GS
=±10V,V
DS
=0V
-20
–
1
V
–
–
–
–
μ
A
μ
A
I
GSS
±10
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250
μ
A
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-4A
V
DS
=-5V,I
D
=-4A
-0.35 -0.5
-0.9
45
60
–
V
m
Ω
m
Ω
S
–
–
34
44
–
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
8
C
lss
C
oss
C
rss
–
–
–
950
165
120
–
–
–
PF
PF
PF
V
DS
=-10V,V
GS
=0V,
Output Capacitance
F=1.0M
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
12
10
19
25
12
1.4
3.6
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=-10V,R
L
=2. 5
Ω
GS
=-4.5V,R
GEN
=3
Ω
V
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Q
g
Q
gs
Q
gd
V
DS
=-10V,I
D
=-4A,
GS
=-4.5V
Gate-Source Charge
–
–
V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
SD
I
S
V
GS
=0V,I
S
=-4A
–
–
–
–
-1.2
-4
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
WildGoose Semiconductor
Rev. A1.0,June,2015
2
WG
3415
Typical Electrical and Thermal Characteristics
20V P-Channel MOSFET
Vdd
t
on
t
r
t
off
t
f
t
d(on)
V
OUT
V
IN
t
d(off)
Rl
Vin
90%
90%
D
Vout
Vgs
INVERTED
Rgen
10%
90%
G
10%
50%
S
50%
10%
PULSE WID
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
Vds Drain-Source Voltage (V)
Figure 3 Power Dissipation
Figure 4 Safe Operation Area
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
WildGoose Semiconductor
Rev. A1.0,June,2015
3
WG
3415
20V P-Channel MOSFET
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Dr
Source On-Resistance
Vgs Gate-Sour
Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
WildGoose Semiconductor
Rev. A1.0,June,2015
4
WG
3415
20V P-Channel MOSFET
Square Wave Pluse Duration(sec)
Figure 13 Normalized Maximum Transient Thermal Impedance
WildGoose Semiconductor
Rev. A1.0,June,2015
5
