Wild-Goose-WGA20N50SE
| Part # | Wild-Goose-WGA20N50SE |
Download  | Wild-Goose-WGA20N50SE |
WGA20N50SE
5
00V N-Channel MOSFET
TO-3P
WGA20N50SE
Features:
1
2 3
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge :Qg=
5
0
nC (Typ.).
□
VDSS
=
5
00
V
,
I
D
=20A
1.Gate (G)
2.Drain (D)
3.Source (S)
□
R
DS
(on)
:
0.2
3
Ω
(Max) @V
G
=10V
□
100% Avalanche
T
e
sted
Absolute Maximum Ratings
(Ta=25
℃
unless otherwise noted)
Symbol
Parameter
Value
5
00
20
Unit
V
DSS
Drain-Source Voltage
Drain Current
V
T
C
=25
℃
I
D
A
T
C
=100
℃
12.
9
±30
980
– Source Voltage
V
GSS
E
AS
Gate
V
Single Pulse Avalanche Energy (note1)
mJ
I
AR
P
D
T
j
Avalanche Current (note2)
Power Dissipation (
T
c
=25
℃
)
Jun
n
T
e
mperature(Max)
Storage
T
e
mperature
20
200
A
W
150
T
stg
-55~+150
℃
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
TL
300
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
3
.
3
Unit
R
θ
JC
R
θ
JA
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
–
–
℃
/W
62.5
WildGoose Semiconductor
Rev. 1.0
HD
, 2015
1
WGA20N50SE
5
00V N-Channel MOSFET
Electrical Characteristics
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250
μ
A
，
V
GS
=0
5
00
–
–
–
V
Breakdown Voltage
T
e
mperature
Coefficient
I
D
=250
μ
A ,Reference
to 25
℃
△
BVDSS/
△
TJ
V/
℃
–
–
0.
53
–
V
DS
=
5
00V, V
GS
=0V
1
10
I
DSS
Zero Gate Voltage Drain Current
μ
A
V
DS
=4
0
0V, Tc=125
℃
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
I
GSSF
I
GSSR
V
GS
=+30V, V
DS
=0V
–
–
–
–
100
nA
V
GS
=-30V, V
DS
=0V
-100
On Characteristics
V
GS(TH)
Date Threshold Voltage
R
DS(ON)
I
D
=250
μ
A,V
DS
=V
2
.5
–
–
4
.5
V
Static Drain-Source
On-Resistance
I
D
=10A,V
GS
=10V
–
0.23
ꢀ
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
–
–
–
3420
325
25
–
–
–
V
S
=25V
，
V
GS
=0
，
f
1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Switching Characteristics
Td(on)
Tr
Turn-On Delay Time
–
–
–
–
–
–
–
95
375
100
105
50
200
760
210
220
65
Turn-On Rise Time
Turn-Off Delay Ti
Turn-Off Rise
e
T
o
tal Gate Charge
Gate-Source Charge
Gat
ain Charge
V
DD
=
25
0V
，
I
D
=20A
R
G
=25
ꢀ
(Note 3,4)
nS
Td(off)
Tf
Qg
V
DS
=4
0
0
V
,V
GS
=10V
，
I
D
=20A (Note 3,4)
Qgs
Qgd
1
4.8
21.6
nC
–
–
Drain-Source Diode Characteristics and Maximum Ratings
Is
Max. Diode Forward Current
Max. Pulsed Forward Current
Diode Forward Voltage
–
–
–
–
–
–
20
80
1.
5
–
A
I
SM
V
SD
Trr
–
–
–
I
D
=20A
V
I
S
=20A,V
GS
=0V
diF/dt=100A/
μ
s
(Note3)
Reverse Recovery Time
5
07
nS
Qrr
Reverse Recovery Charge
–
7.2
–
μ
C
Notes : 1, L=
5.0
mH, IAS=20A, VDD=50
V
,
R
G=25
ꢀ
, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse
T
e
st : Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
4, Essentially Independent of Operating
T
e
mperature
WildGoose Semiconductor
Rev. 1.0
HD
, 2015
2
WGA20N50SE
5
00V N-Channel MOSFET
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
2
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
150
o
C
25
o
C
10
1
Bottom :
5.5 V
10
1
-55
o
C
10
0
* Notes :
*
otes :
1. 250
µ
s Pulse Test
1. V
DS
= 40V
o
2. 250
µ
s Pulse Test
2. T
C
= 25
C
10
0
10
-1
10
0
10
1
2
4
6
8
10
12
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-
ource Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Vari
ion vs. Source Current
nd Temperatue
0.8
0.6
V
G
S
= 10V
10
1
0.4
150
o
C
25
o
C
V
G
0.2
*Notes :
1. V
GS
= 0V
o
2. 250
µ
s Pulse Test
* Note
T
J
= 25
C
0.0
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
15
30
45
75
90
V
SD
, Source-Drain voltage [V]
I
D
,
D
rain
nt [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
10
8
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
V
DS
= 100V
C
oss
= C
ds
+ C
gd
V
DS
= 250V
V
DS
= 400V
5000
4000
3000
2000
1000
0
C
rss
= C
gd
C
oss
C
iss
6
4
*
Note :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
2
* Note : I
D
= 20A
0
10
-1
10
0
10
1
0
10
20
30
40
50
Q
G
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
WildGoose Semiconductor
Rev. 1.0
HD
, 2015
3
WGA20N50SE
5
00V N-Channel MOSFET
Typical Characteristics
(Continued)
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
25
20
15
10
5
*
N
otes :
1. V
G
S
= 10 V
0.5
2. I
D
= 10 A
0
25
0.0
-100
50
75
100
125
150
-50
0
50
100
150
200
T
C
Case Temperature [
o
C]
T
J
, Junction Temperature [
o
C
]
Figure 9-2. Maximum Safe Operating Area
10
2
10
2
10
µ
s
10
µ
s
100
µ
s
1
m
s
10 ms
100 ms
DC
100
µ
s
1 ms
10 ms
100 ms
10
1
10
0
10
1
10
0
10
-1
Operation in This Area
is Limited by R
D
S(on)
Operation in This Area
is Limited by R
DS(on)
DC
* Note
:
1. T
C
= 25
C
= 150
*
N
otes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
-1
10
C
e Pulse
-2
10
10
0
10
1
10
2
10
3
10
0
10
1
10
2
V
DS
, Drain-
e Voltage [V]
V
D
S
, Drain-Source Voltage [V]
Figure 10. Ma
mum Drain Currentvs. Case Temperature
1 0
0
D = 0 .5
0 .2
0
.
1
1 0
-1
P
DM
0
.
0 5
0
.
0 2
0
.
0 1
t
1
t
2
*
N o
t
e s
:
o
1 .
Z
θ
J C
(
t)
=
2
.
0
C /W
M a x.
1 0
-2
2 .
D u
t
y
F a c to r,
1
/
t
2
D
=
t
s in g le
p u ls e
3 .
T
J M
T
C
P
D M
* Z
θ
J C
(
t)
–
=
1 0
-5
1 0
–
4
1 0
–
3
1 0
-2
1 0
-1
1 0
0
1 0
1
t
1
, S
q u a
r
e
W a
v e
P u ls e
D u ra tio n
[s e c ]
Transient Thermal Response Curve
WildGoose Semiconductor
Rev. 1.0
HD
, 2015
4
WGA20N50SE
5
00V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
WildGoose Semiconductor
Rev. 1.0
HD
, 2015
5
WGA20N50SE
5
00V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveform
WildGoose Semiconductor
Rev. 1.0
HD
, 2015
6
WGA20N50SE
5
00V N-Channel MOSFET
Package Dimension
TO-3P
Unit: mm
Size
Size
Size
Max
Size
Symbol
Symbol
Symbol
Symbol
Min
Max
Min
Max
Min
Min
Max
W
W1
15.40 15.80
13.40 13.80
W5
W6
1.80
2.80
2.20
3.20
L3
L4
13.70 14.10
19.70 20.30
T2
T3
1.20
0.55
1.60
0.75
G (Φ)
(
Front
)
G1(Φ)
(
Back
)
W2
9.40
9.80
L
19.70
20.10
L5
3.30
3.70
3.30
3.10
3.50
3.30
W3
W4
5.45 (TYP)
0.80 1.20
L1
L2
18.50
3.60
18.90
4.00
T
4.60
1.45
5.00
1.65
T1
WildGoose Semiconductor
Rev. 1.0
HD
, 2015
7
