Wild-Goose-WGA9N90
| Part # | Wild-Goose-WGA9N90 |
Download  | Wild-Goose-WGA9N90 |
WGA9N90
900V N-Channel MOSFET
TO-3P
WGA9N90
Features:
1
2 3
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge: Qg= 45nC (Typ.).
□
BVDSS=900
V
,
I
D
=9A
1.Gate (G)
2.Drain (D)
3.Source (S)
□
R
DS
(on) : 1.4
Ω
(Max) @V
G
=10V
□
100% Avalanche
T
e
sted
Absolute Maximum Ratings
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Drain-Source Voltage
Value
Unit
V
DSS
900
9
V
T
C
=25
℃
I
D
Drain Current
A
T
C
=100
℃
5.45
±30
900
V
GS(TH)
E
AS
Gate Threshold Volta
e
V
Single Pulse Avalanche Energy (note1)
mJ
I
AR
P
D
T
j
Avalanche
urrent (note2)
Power Dissi
ation (Tj=25
℃
)
Junction
T
e
mperature(MAX)
Storage
T
e
mperature
9
A
280
150
W
℃
℃
T
stg
-55~+150
300
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
TL
℃
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
–
–
0.52
62.5
℃
/W
℃
/W
WildGoose Semiconductor
Rev. A1.0, 2015
1
WGA9N90
900V N-Channel MOSFET
Electrical Characteristics
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250
μ
A
，
V
GS
=0
900
–
–
–
V
Breakdown Voltage
T
e
mperature
Coefficient
I
D
=250
μ
A ,Reference
to 25
℃
△
BVDSS/
△
TJ
V/
℃
–
–
1.0
–
V
DS
=900V, V
GS
=0V
10
I
DSS
Zero Gate Voltage Drain Current
μ
A
V
DS
=720V,
T
c
=125
℃
100
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
I
GSSF
I
GSSR
On Characteristics
V
GS(TH)
Date Threshold Voltage
R
DS(ON)
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
–
–
–
–
100
nA
-100
I
D
=250
μ
A,V
DS
=V
3
–
–
–
5
V
Static Drain-Source
On-Resistance
I
D
=4.5A,V
GS
=10V
1.4
ꢀ
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
–
–
–
2100
175
14
2730
230
18
V
DS
=25V
，
V
GS
=0
，
f=1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Switching Characteristics
Td(on)
Tr
Turn-On Delay Time
–
–
–
–
–
–
–
50
120
100
75
110
250
210
160
58
–
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Rise Tim
T
o
tal Gate Charge
Gate-S
rce Charge
Gate-Drain Charge
V
DD
=450V
，
I
D
=9A
R
G
=25
ꢀ
(Note 3,4)
ns
Td(off)
Tf
Qg
45
V
DS
=720,V
GS
=10V
，
I
D
=9A (Note 3,4)
Qgs
Qgd
13
nC
18
–
Drain-Source Diode Characteristics and Maximum Ratings
Is
Max. Diode Forward Current
Max. Pulsed Forward Current
–
–
–
–
–
–
9
A
I
SM
36
V
SD
Trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
D
=9A
–
–
–
–
1.4
V
I
S
=9A,V
GS
=0V
diF/dt=100A/
μ
s
(Note3)
720
76
–
–
μ
s
μ
C
Qrr
Notes : 1, L=20.8mH, IAS=9A, VDD=50
V
,
R
G=25
ꢀ
, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse
T
e
st : Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
4, Essentially Independent of Operating
T
e
mperature
WildGoose Semiconductor
Rev. A1.0, 2015
2
WGA9N90
900V N-Channel MOSFET
Typical Characteristics
WildGoose Semiconductor
Rev. A1.0, 2015
3
WGA9N90
900V N-Channel MOSFET
Typical Characteristics
(Continued)
WildGoose Semiconductor
Rev. A1.0, 2015
4
WGA9N90
900V N-Channel MOSFET
WildGoose Semiconductor
Rev. A1.0, 2015
5
WGA9N90
900V N-Channel MOSFET
WildGoose Semiconductor
Rev. A1.0, 2015
6
WGA9N90
900V N-Channel MOSFET
Package Dimension
TO-3P
Unit: mm
WildGoose Semiconductor
Rev. A1.0, 2015
7
