Wild-Goose-WGD30N06S
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WGD30N06S
6
0V N-Channel MOSFET
TO-252
WGD30N06S
6
0V N-Channel MOSFET
Features:
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge :Qg=
50
nC (Typ.).
□
BVDSS=
6
0
V
,
I
D
=
3
0A
1.Gate (G)
2.Dra
n (D)
.Sourse (S)
□
R
DS
(on) : 0.
0
2
4
Ω
(Max) @V
G
=10V
□
100% Avalanche
T
e
sted
Absolute Maximum Ratings*
(Tc=25
℃
Unless otherwise noted)
Symbol
PARAMETER
Value
6
0
Unit
V
DSS
Drain-Source Voltage
V
T
C
=25
℃
T
C
=100
℃
3
0
I
D
Drain Current
A
21
V
GS(TH)
E
AS
Gate Thres
old Voltage
±20
V
Single Pulse Avalanche Energy (note1)
mJ
72
90
I
AR
P
D
T
j
A
anche Current (note2)
Power Dissipation (
T
c
=25
℃
)
Junction
T
e
mperature(MAX)
Storage
T
e
mperature
A
W
℃
℃
45
1
75
T
stg
-55~+1
75
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
TL
300
℃
Thermal Characteristics
Symbol
PARAMETER
Typ.
MAX.
3
.3
–
Unit
℃
/W
℃
/W
℃
/W
R
θ
JC
R
θ
JA
R
θ
CS
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
Thermal Resistance,Case to Sink
–
–
–
110
WildGoose Semiconductor
Rev. 1.0,June,2015
1
WGD30N06S
6
0V N-Channel MOSFET
Electrical Characteristics (T
C
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
BV
DSS
I
DSS
V
GS
=0V I
D
=250
μ
A
V
DS
=60V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
60
–
–
–
–
–
1
V
μ
A
nA
I
GSS
–
±100
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250
μ
A
V
GS
=10V, I
D
=30A
V
DS
=5V,I
D
=5A
1.2
–
1.6
24
–
2.5
35
–
V
m
Ω
S
11
C
lss
C
oss
C
rss
–
–
–
–
–
–
PF
PF
PF
590
70
V
DS
=15V,V
GS
=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
64
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
6.0
6.1
17
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
=2A,
V
DD
=30V,
ID
Turn-on Rise Time
V
GS
=10V,R
G
=3
Ω
Turn-Off Delay Time
Turn-Off Fall Time
3.0
25.3
4.7
6.1
Total Gate Charge
Q
g
Q
gs
Q
gd
V
DS
=30V,I
D
=15A,
GS
=10V
Gate-Source Charge
V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
V
SD
I
S
V
GS
=0V,I
S
=30A
–
–
–
–
1.2
30
–
V
A
–
t
rr
TJ = 25°C, IF =30A
di/dt = 100A/
μ
s
(Note3)
29.5
50
nS
nC
Reverse Recovery Charge
Forward Turn-On Time
Qrr
t
on
–
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec
.
3.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
5.
EAS condition : Tj=25
℃
,VDD=30V,VG=10V,L=0.5mH,Rg=25
Ω
WildGoose Semiconductor
Rev. 1.0,June,2015
2
WGD30N06S
6
0V N-Channel MOSFET
Typical Characteristics
T
J
-Junction
T
e
mperature(
℃
)
Vds Drain-Source Voltage (V)
Figure 4 Rdson
nction Temperature
Figure 1 Output Characteristics
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Chara
ristics
Figure 5 Gate Charge
I
D
– Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
WildGoose Semiconductor
Rev. 1.0,June,2015
3
WGD30N06S
6
0V N-Channel MOSFET
Typical Characteristics
(Continued)
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Capacitance vs Vds
Figure 9 BV
DSS
v
unction Temperature
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 8 Safe Operation
ea
Figure 10 V
vs Junction Temperature
Square Wave Pluse Duration (sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
WildGoose Semiconductor
Rev. 1.0,June,2015
4
WGD30N06S
6
0V N-Channel MOSFET
Test Circuit
1) E
AS
test Circuit
2) Gate charge test Circuit
3) Switch Time Test Circuit
WildGoose Semiconductor
Rev. 1.0,June,2015
5
WGD30N06S
6
0V N-Channel MOSFET
Package Dimension
TO-252
Unit:mm
WildGoose Semiconductor
Rev. 1.0,June,2015
6
