Wild-Goose-WGD40N10V
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WGD40N10V
100V N-Channel MOSFET
TO-252
WGD40N10V
100V N-Channel MOSFET
Features:
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge :Qg=
12.7
nC (Typ.).
□
BVDSS=100
V
,
I
D
=
4
0A
1.Gate (G)
2.Drain (D)
3.Sourse (S)
□
R
DS
(on) : 17m
Ω
(Max) @V
G
=10V
□
100% Avalanche
T
e
sted
Absolute Maximum Ratings*
(Tc=25
℃
Unless otherwise noted)
Symbol
PARAMETER
Value
100
4
0
Unit
V
DSS
Drain-Source Vo
ge
V
T
C
=25
℃
T
C
=100
℃
I
D
Drain Current
A
25
V
GSS
E
AS
Gate-to-Source Voltage
±20
0.92
V
Single
lse Avalanche Energy (note1)
mJ
I
AR
P
D
T
j
Avalanche Current (note2)
Power Dissipation (
T
c
=25
℃
)
Junction
T
e
mperature(MAX)
Storage
T
e
mperature
40
52
A
W
℃
℃
1
50
T
stg
-55~+1
50
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
TL
300
℃
Thermal Characteristics
Symbol
PARAMETER
Typ.
MAX.
1
.8
Unit
℃
/W
℃
/W
℃
/W
R
θ
JC
R
θ
JA
R
θ
CS
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
Thermal Resistance,Case to Sink
–
–
–
65
110
WildGoose Semiconductor
Rev. 1.
1
,June,2021
1
WGD40N10V
100V N-Channel MOSFET
Electrical Characteristics (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Condition
Min Typ
Max
Unit
Off Characteristics
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
=0V I
D
=250
μ
A
100
–
–
–
–
1
V
V
DS
=100V,V
GS
=0V
–
–
μ
A
nA
I
GSS
V
GS
=±20V,V
DS
=0V
±100
On Characteristics
(Note 3)
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
,I
D
=250
μ
A
1.2
1.9
14
48
2.5
17
–
V
m
Ω
S
R
DS(ON)
Drain-Source On-State Resistance
V
GS
=10V, I
D
=10A
–
–
g
FS
Forward Transconductance
V
DS
=5V,I
D
=20A
Dynamic Characteristics
(Note4)
C
lss
Input Capacitance
Output Capacitance
–
–
–
769
171
5.1
–
–
–
PF
PF
PF
V
DS
=50V,V
GS
=0V,
C
oss
F=1.0MHz
C
rss
Switching Characteristics
(Note 4)
t
d(on)
Turn-on Delay Time
t
r
t
d(off)
t
f
Reverse Transfer Capacitance
–
–
–
–
–
–
–
4.3
–
–
nS
nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=50V,R
L
=2.5
Ω
5.1
16.7
8.7
V
GS
=10V,R
GEN
=6
Ω
–
–
–
–
–
nS
nS
nC
nC
nC
Q
g
Q
gs
Q
gd
12.7
6.7
V
DS
=50V,I
D
=10A,
GS
=10V
V
3.3
Drain-Source Diode Characteristics
V
SD
I
S
Diode Forward Voltage
(Note 3)
V
GS
=0V,I
S
=10A
–
–
–
–
–
–
1.0
40
–
V
A
Diode Forward Current
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–
t
rr
TJ = 25°C, IF = 15A
di/dt = 100A/
μ
s
(Note3)
39
30
nS
nC
Qrr
t
on
–
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t
≤
10 sec.
3. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4. Guaranteed by design, not subject to production
5. EAS Condition : Tj=2
℃
,V
DD
=50V,V
G
=10V,L=0.5mH,Rg=25
Ω
, I
AS
=32A
WildGoose Semiconductor
Rev. 1.
1
,June,2021
2
WGD40N10V
100V N-Channel MOSFET
Typical Electrical & Thermal Characteristics
60
10
8
V
GS
= 10V
V
DS
= 5.0V
V
GS
= 5.0V
V
GS
= 4.0V
48
36
24
12
0
V
GS
= 4.5V
T
J
= 125°C
6
T
J
= 25°C
V
GS
= 3.5V
4
2
V
GS
= 3.0V
V
GS
= 2.5V
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
V
DS
(V)
V
GS
(V)
Figure 1:
Saturation Characteristics
Figure 2:
Tr
fer Characteristics
2.5
30
26
22
18
14
10
2
1.5
1
V
GS
= 10V
I
D
= 10A
V
GS
= 4.5V
V
GS
= 4.5V
D
= 6A
I
V
GS
= 10V
0.5
0
-50
0
50
100
150
0
10
20
30
40
50
Temperature (
C)
I
D
(A)
Figure 4:
R
DS(ON)
vs. Junction Temperature
Figure 3:
R
DS(ON)
v
n Current
100
10
10000
1000
100
10
C
iss
T
J
= 125°C
1
C
oss
T
J
= 25°C
0.1
C
rss
0.01
0.001
1
0
15
30
45
60
75
90
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(V)
V
DS
(V)
Figure 5:
Body-Diode Characteristics
Figure 6:
Capacitance Characteristics
WildGoose Semiconductor
Rev. 1.
1
,June,2021
3
WGD40N10V
100V N-Channel MOSFET
Typical Electrical & Thermal Characteristics
50
60
48
36
24
12
0
40
30
20
10
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
CASE
(
C)
T
CASE
(
C)
Figure 8:
Power De-rati
g
Figure 7:
Current De-rating
1000
100
10
1000
800
600
00
200
0
Limited by
R
DS(ON)
1.0
s
10
s
100
s
1.0ms
10ms
DC
1
T
J_Max
= 150
°
C
T
C
= 25
°
C
0.1
0.01
0.1
1
10
100
1000
0.00001 0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
V
DS
(V)
Figure 10:
Single Pulse Power Rating, Junction-to-Case
Figure 9:
Maximum Saf
erating Area
10
Duty Cycle = T
o
T
J
= T
C
+ P
D
x Z
JC
JC
R
JC
=
.8
°
C/W
1
0.1
Duty = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
Pulse Width (s)
Figure 11:
Normalized Maximum Transient Thermal Impedance
WildGoose Semiconductor
Rev. 1.
1
,June,2021
4
WGD40N10V
100V N-Channel MOSFET
Package Dimension
TO-252
Unit:mm
WildGoose Semiconductor
Rev. 1.
1
,June,2021
5
