Wild-Goose-WGD4N65SE
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WGD4N65SE
650V N-Channel MOSFET
T
O
–
2
52
3
WGD4N65SE
Features:
2
□
Low Intrin
s
i
c Capacitances.
□
Excellent Switching
Characteristics.
□
Extended Safe Operatin
g
A
rea.
□
Unrivalled Gate Charge :Qg=14nC (Typ.).
□
BVDSS=650 V,I
D
=4A
1
D(2)
□
R
D
S
(on) : 2.50
Ω
(Max) @
V
G
=10V
□
100% Avalan
c
h
e Tested
1.Gate
(G)
(D)
2.Drain
G(1)
3.Source (S)
S(3)
Absolute Maximum Ratings
(Ta=25
℃
unless otherwise noted)
S
y
m
bol
Parameter
Value
650
4.0
Unit
V
V
DSS
I
D
Drain-Source Voltage
Drain Current
T
j
=25
℃
A
2.7
T
j
=100
℃
V
GS(TH)
E
AS
I
AR
Gate Threshold Vol
e
30
V
Single Pulse Avalanche Energy (note1)
Avalanche Current (note2)
120
mJ
4.0
50
A
Powe
issipa
W
P
D
tion (Tj=25
℃
)
Junction T
150
℃
℃
℃
T
j
emperature(Max)
Storage Temperature
Maximum lead temperature for soldering purpose,1/8’from
T
stg
TL
-55~+150
300
case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Typ.
–
Max.
2.4
Unit
R
θ JC
R
θ
J
A
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
℃
/W
℃
/W
62.5
WildGoose S
emiconductor Rev
. A1.0, 2015
1
WGD4N65SE
650V N-Channel MOSFET
Electrical Characteristics
(Ta=25
℃
unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Chara cteristics
BV
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
650
–
–
–
–
I
D
=25
0
μ
A
，
V
GS
=0
I
D
=250 μA ,Reference
to 2
5
℃
V
V
/
℃
△
BVDSS/
△
TJ
0.67
–
–
10
V
DS
=650V, V
G
S
=0V
I
DSS
Zero Gate Voltage Drain Current
μA
nA
100
V
DS
=520V
,
T
j=125
℃
Gate-body leakage Current,
I
GSSF
–
100
V
G
S
=+30V, V
DS
=0V
V
G
S
=-30V, V
DS
=0V
–
–
Forward
Gate-body leakage Current,
I
GSSR
-100
Reverse
On Characteristics
V
GS(TH)
R
DS(ON)
Date ThresholdVoltage
Static Drain-Source
2
–
–
4
V
I
D
=250μA,V
DS
=V
GS
I
D
=2.0A,V
GS
=10V
2.5
Ω
On-Resistance
Dynamic Characteristics
Ciss
Coss
Crss
Input
–
–
560
48
–
–
Capacitance
V
D
S
=25V
，
V
GS
=0
，
f=1.0MHz
pF
Output
Capacitance
Reverse Transfer Capacitance
–
5.4
–
Sw itchingCharacteristics
Td(on)
–
–
–
–
–
–
–
25
45
Turn-On Delay Time
Tr
Td(off)
Tf
V
DD
=325V
，
I
D
=4A
Turn-On Rise Time
Turn-Of
f
D
elay T
Turn-Off Rise
Time
Total Gate Charge
Gate-
ce Charge
Gate-Drain Charge
nS
nC
R
G
=25Ω (Note
25
3,4)
35
14
.
3
2.8
4.5
Qg
V
DS
=520V,V
GS
=10V
，
I
D
=4A
(Note3,4)
Qgs
Qgd
–
–
Drain-Source Diode
Characteristics and Maximum Ratings
Is
Max. Diode ForwardCurrent
Max. Pulsed Forward Current
Diode Forward Voltage
–
–
– –
– –
–
4
16
1.4
–
A
I
SM
V
SD
–
–
V
I
D
=4A
I
S
=4A,V
GS
=0V
Trr
Reverse Recovery
Time
nS
393
μs
diF/dt=100A/
(Note3)
Qrr
Reverse Recovery Charge
–
μC
1.5
–
,
Starting TJ
=25
℃
Notes : 1, L=0.5mH, IAS= 4A, VDD=50V, RG=25
Ω
2, Repetitive Rating : Pulse width limited by maximum junction
temperature
3, Pulse Test : Pulse Width
≤
300
μ
s
,
Duty Cycle
≤
2
%
4
,
Essentially Independen
t
of Operating Temperature
WildGoose
S
emiconductor Rev.
A1.0, 2015
2
WGD4N65SE
650V N-Channel MOSFET
Typical Characteristics
Breakdown Voltage
Variation
VS. Temperayure
On-Resistance Junction
Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
0.9
0.8
0.5
0.0
200
-100 -50
0
50 100 150
250
50
-1
-50
0
100
150
200
unction Temperture,Tj(
℃
)
Maximum Safe Operating Area
Junction Temperature,Tj(
℃
)
Maximum Drain Current
VS.Case Temperature
2
10
5
4
3
2
1
0
1
10
µs
100
1ms
10ms
0
DC
1
0
-1
10
0
1
3
25
100
125
150
10
10
2
50
75
10
10
Drain-Source Voltage,VDS(V)
Transfer Characteristics
Case
perature,TC(
℃
)
On-State Characteristics
10
10
1
25
℃
150
℃
1
0.1
0.1
2
8
10
4
6
1
10
100
0.1
WildGoose
S
emiconductor Rev.
A1.0, 2015
3
WGD4N65SE
650V N-Channel MOSFET
Typical Characteristics
(Continued)
On-Resistance Variation vs.
Drain Currentand Gate Voltage
Capacitance Characteristics
(Non-Repetitive)
6
5
4
1200
1000
CISS
V
GS
=10V
800
600
3
2
1
0
V
GS
=20V
COSS
400
200
0
S
10
0.1
1
4
8
0
2
6
10
12
Drain-Source Voltage,VDS(V)
Drain Current,
ID(A)
Body
ode Forward Voltage Variation
With Source Current and Temperature
Gate Charge Characteristics
12
10
8
10
VDS=300V
VDS=480V
0
℃
15
℃
25
6
1
VDS=120V
4
2
0
0.1
10
15
20
0
5
25
0.8
1.0
0.4
0.6
0.2
Total Gate Charge ,Qg(nC)
Source-Drain Voltage,V
SD
(V)
Transient Thermal Response Curve
0
10
-1
10
-2
10
-4
0
-1
-5
-3
1
-2
10
10
10
10
10
10
10
WildGoose
S
e
miconductor Rev
. A1.0, 2015
4
WGD4N65SE
650V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
R
D
V
DD
V
GS
90%
V
GS
R
G
10%
V
DD
V
GS
10V
D.U.T.
tR
tF
to(OFF)
to(ON)
Switching Test
Circuit
Switching Waveforms
Same Type
as D.U.T.
K
50 Ω
VGS
12V
Q
G
µF
µF
0.3
0.2
V
DS
10V
Q
GS
Q
GS
V
GS
DUT
mA
Gate
arge Test
Circuit
Gate Charge
Waveform
L
BV
DSS
V
DS
I
AS
R
D
V
DD
10V
V
DS(t)
V
DD
D.U.T.
tp
tp
Time
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
WildGoose
S
e
miconductor Rev
. A1.0, 2015
5
WGD4N65SE
650V N-Channel MOSFET
Peak Diode Recovery dv/dt
Test Circuit & Waveform
D.U.T
+
V
DS
_
+
_
L
R
G
Driver
V
DD
*dv/dt controlled by R
G
Same Type
as D.U.T
*I
D
controlled pulse period
*D.U.T.-Device Under Test
V
GS
Peak Diode Recovery Test Circuit
Period
P
.
W.
V
GS
(Driver)
D=
Period
P.W.
V
GS
=10V
I
F
M
,Body Diode Forward
Current
I
SD
(D.U.T.)
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery
dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Peak Diode Recovery dv/dt Waveforms
Forward Voltage Drop
WildGoose
S
e
miconductor Rev
. A1.0, 2015
6
WGD4N65SE
650V N-Channel MOSFET
Package Dimension
TO-252
Unit: mm
WildGoose
S
e
miconductor Rev
. A1.0, 2015
7
