Wild-Goose-WGD5N50SE

WGD5N50SE  

500V N-Channel MOSFET  

TO-252  

2

WGD5N50SE  

Features:  

1

□

□

□

□

□

□

□

Low Intrinsic Capacitances.  

Excellent Switching Characteristics.  

Extended Safe Operating Area.  

Unrivalled Gate Charge :Qg=13nC (Typ.).  

V

DSS

=500V,I

D

=5A  

3

R

DS

(on) : 1.4Ω (Max) @V

G

=10V  

100% Avalanche Tested  

1.Gate (G)  

2.Drain (D)  

3.Source (S)  

Absolute Maximum Ratings

(Ta=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Value  

500  

5.0  

Unit  

V

DSS  

Drain-Source Voltage  

Drain Current  

V

T

j

=25

℃

 

I

D  

A

T

j

=100

℃  

2.2  

V

GSS  

E

AS  

Gate-Source Voltage  

±30  

270  

V

Single Pulse Avalanche Energy (note1)  

mJ  

I

AR  

P

D  

T

j  

Avalanche Current (note2)  

Power Dissipation (Tj=25

℃

)  

Junction Temperature(Max)  

Storage Temperature  

5.0  

25  

A

W

℃

℃

150  

T

stg  

-55~+150  

Maximum lead temperature for soldering purpose,1/8” from  

case for 5 seconds  

TL  

300  

℃

Thermal Characteristics  

Symbol  

Parameter  

Typ.  

Max.  

3.45  

110  

Unit  

℃

/W  

℃

/W  

R

θJC  

R

θJA  

Thermal Resistance,Junction to Case  

Thermal Resistance,Junction to Ambient  

–

–

WildGoose Semiconductor Rev.1.0HS, 2015  

1

WGD5N50SE  

500V N-Channel MOSFET  

Electrical Characteristics

 

(Ta=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Test Condition  

Min.  

Typ.  

Max.  

Unit  

Off Characteristics  

BV

DSS  

Drain-Source Breakdown Voltage  

I

D

=250μA

，

V

GS

=0  

500  

–

–

–

V

I

D

=250μA ,Reference  

to 25

℃  

Breakdown Voltage Temperature  

Coefficient  

△

BVDSS/

△

TJ  

–

–

0.47  

V/

℃  

V

DS

=500V, V

GS

=0V  

V

DS

=400V, Tj=125

℃  

V

GS

=+30V, V

DS

=0V  

–

1

I

DSS  

Zero Gate Voltage Drain Current  

μA  

nA  

10  

Gate-body leakage Current,  

Forward  

Gate-body leakage Current,  

Reverse  

I

GSSF  

I

GSSR  

–

–

–

–

100  

V

GS

=-30V, V

DS

=0V  

-100  

On Characteristics  

V

GS(TH)

Date Threshold Voltage  

R

DS(ON)  

I

D

=250μA,V

DS

=V

GS  

I

D

=2.5A,V

GS

=10V  

2

–

–

–

V

Ω

4

Static Drain-Source  

On-Resistance  

1.4  

Dynamic Characteristics  

–

–

–

Ciss  

Coss  

Crss  

Input Capacitance  

–

–

–

620  

70  

8

V

DS

=25V

，

V

GS

=0

，  

f=1.0MHz  

Output Capacitance  

pF  

Reverse Transfer Capacitance  

Switching Characteristics  

Td(on)  

Tr  

Turn-On Delay Time  

–

–

–

–

–

–

–

13  

35  

Turn-On Rise Time  

Turn-Off Delay Time  

Turn-Off Rise Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

55  

25  

35  

120  

60  

V

DD

=250V

，

I

D

=5A  

R

G

=25Ω (Note 3,4)  

ns  

Td(off)  

Tf  

80  

17  

–

Qg  

13  

V

DS

=400V,V

GS

=10V

，

 

I

D

=5A (Note 3,4)  

Qgs  

Qgd  

3.4  

6.4  

nC  

–

Drain-Source Diode Characteristics and Maximum Ratings  

Is  

Max. Diode Forward Current  

Max. Pulsed Forward Current  

Diode Forward Voltage  

–

–

–

–

–

–

5.0  

20  

1.5  

–

A

I

SM  

V

SD  

Trr  

–

–

–

I

D

=5A  

V

I

S

=5A,V

GS

=0V  

diF/dt=100A/μs  

(Note3)  

Reverse Recovery Time  

215  

nS  

Qrr  

Reverse Recovery Charge  

–

1.26  

–

μC  

Notes : 1, L=27mH, IAS=5A, VDD=50V, RG=25Ω, Starting TJ =25°C  

2, Repetitive Rating : Pulse width limited by maximum junction temperature  

3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%  

4, Essentially Independent of Operating Temperature  

WildGoose Semiconductor Rev.1.0HS, 2015  

2

WGD5N50SE  

500V N-Channel MOSFET  

Typical Characteristics  

WildGoose Semiconductor Rev.1.0HS, 2015  

3

WGD5N50SE  

500V N-Channel MOSFET  

Typical Characteristics

 

(Continued)  

WildGoose Semiconductor Rev.1.0HS, 2015  

4

WGD5N50SE  

500V N-Channel MOSFET  

Gate Charge Test Circuit & Waveform  

V

GS  

Same Type  

50KΩ  

as DUT  

Q

g  

200nF  

10V  

300nF  

V

DS  

V

GS  

Q

gs  

Q

gd  

DUT  

3mA  

Charge  

Resistive Switching Test Circuit & Waveforms  

R

L  

V

DS  

V

DS  

90%  

V

DD  

V

GS  

R

G  

10%  

V

GS  

DUT  

t

d(on)  

t

r  

t

d(off)  

t

f  

t

off  

t

on  

Unclamped Inductive Switching Test Circuit & Waveforms  

L

BV

DSS  

1

–

–

–

–  

E =  

LI  

AS  

V

DS  

2

BV

DSS  

– V

DD  

BV

DSS  

I

AS  

I

D  

R

G  

V

DD  

I

D

(t)  

V

DS

(t)  

V

DD  

DUT  

t

p  

t

p  

Time  

WildGoose Semiconductor Rev.1.0HS, 2015  

5

WGD5N50SE  

500V N-Channel MOSFET  

Peak Diode Recovery dv/dt Test Circuit & Waveforms  

+

DUT  

V

DS  

I

SD  

L

Driver  

R

G  

Same Type  

as DUT  

V

DD  

V

GS  

• dv/dt controlled by R

G  

• I

SD

controlled by pulse period  

Gate Pulse Width  

————————-  

Gate Pulse Period  

–

D =  

V

GS  

10V  

( Driver  

)

I

FM

, Body Diode Forward Current  

I

SD  

di/dt  

( DUT )  

I

RM  

Body Diode Reverse Current  

Body Diode Recovery dv/dt  

V

SD  

V

DS  

( DUT )  

V

DD  

Body Diode  

Forward Voltage Drop  

WildGoose Semiconductor Rev.1.0HS, 2015  

6

WGD5N50SE  

500V N-Channel MOSFET  

Package Dimension  

T

O-252  

U

nit: mm  

WildGoose Semiconductor Rev.1.0HS, 2015  

7