Wild-Goose-WGD7N40SE
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WGD7N40SE
400V N-Channel MOSFET
TO-252
2
WGD7N40SE
Features:
1
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge :Qg=
16
nC (Typ.).
□
BVDSS=400
V
,
I
D
=
7
A
3
1
Gate (G)
2.Drain (D)
3.Source (S)
□
R
DS
(on) :
1.1
Ω
(Max) @V
G
=10V
□
100% Avalanche
T
e
sted
Absolute Maximum Ratings
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Value
Unit
V
DSS
Drain-Source Voltage
400
7
V
T
C
=25
℃
I
D
Drain Current
A
T
C
=
00
℃
3.8
±30
260
7
V
GSS
E
AS
Gate-Source Voltage
V
Single Pulse Avalanche En
y (note1)
mJ
I
AR
P
D
T
j
Avalanche Current (note2)
Power Dissipation (
T
c
=25
℃
)
Junction
T
e
m
ature(Max)
Storage
T
e
mperature
A
W
75
150
T
stg
-55~+150
℃
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
TL
300
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
R
θ
JC
R
θ
JA
R
θ
CS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Sink
–
–
1.67
100
℃
/W
0.5
–
WildGoose Semiconductor
Rev.
1.0H
D
, 2021
1
WGD7N40SE
400V N-Channel MOSFET
Electrical Characteristics
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250
μ
A
，
V
GS
=0
4
00
V
–
–
–
Breakdown Voltage
T
e
mperature
Coefficient
I
D
=250
μ
A ,Reference
to 25
℃
△
BVDSS/
△
TJ
V/
℃
–
–
0.
5
–
V
DS
=
40
0V, V
GS
=0V
V
DS
=
320
V, T
c
=125
℃
V
GS
=+30V, V
DS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
μ
A
10
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
I
GSSF
I
GSSR
On Characteristics
–
–
–
–
100
nA
V
GS
=-30V, V
DS
=0V
-100
V
GS(TH)
R
DS(ON)
Gate Threshold Voltage
I
D
=250
μ
A,V
DS
=V
GS
2
–
–
4
V
Static Drain-Source
On-Resistance
I
D
=2.0A,V
GS
=10V
Ω
1.
1
0.95
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
–
–
–
583
71
–
–
–
V
DS
=
5V
，
V
GS
=0
，
f=1.
MHz
Output Capacitance
pF
Reverse Transfer Capacitance
5.1
Switching Characteristics
Td(on)
Tr
Turn-On Delay Time
–
–
–
–
–
–
–
14
20
31
12
16
7.0
7.1
–
–
–
–
–
–
–
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Rise Tim
T
o
tal Gate Charge
Gate-Source Charge
Gate-Dr
Charge
V
DD
=2
00
V
，
I
D
=7 A
R
G
=10
Ω
(Note 3,4)
ns
Td(off)
Tf
Qg
=32
V
DS
0
V,V
GS
=10V
，
Qgs
Qgd
nC
I
D
=7 A
(Note 3,4)
Drain-Source Diode Characteristics and Maximum Ratings
Is
Max. Diode Forward Current
Max. Pulsed Forward Current
Diode Forward Voltage
–
–
–
–
–
–
7
A
36
I
SM
V
SD
Trr
–
–
–
I
D
=7 A
1.5
–
V
I
S
=7 A,V
GS
=0V
diF/dt=100A/
μ
s
(Note3)
Reverse Recovery Time
240
nS
Qrr
Reverse Recovery Charge
–
–
μ
C
1.8
Notes : 1, L=2.26mH, IAS=
7
A
, VDD=50
V
,
R
G=25
Ω
, St
artin
g
T
J =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse
T
e
st : Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
4, Essentially Independent of Operating
T
e
mperature
WildGoose Semiconductor
Rev.
1.0H
D
, 2021
2
WGD7N40SE
400V N-Channel MOSFET
Typical Characteristics
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC , Case Temperature ,
Figure 1
Maximum Forward Bias Safe Operatin
g
A
rea
Figure 2
Maximum Power d
tion vs Case Temperature
Figure 3
Maximum Continuous Drain Cu
vs Case Temperature
Figure
4
T
ypical
Output Characteristics
Figure
5 Maximum
Effective Thermal Impedance , Junction to Case
WildGoose Semiconductor
Rev.
1.0H
D
, 2021
3
WGD7N40SE
400V N-Channel MOSFET
Typical Characteristics
(Continued)
Figure
7 Typic
dy Diode Transfer Characteristics
Figure
6 Typical
Transfer Characteristics
Figure
9
Typical Drian to Source on Resistance
vs Junction Temperature
Figure
8
Typical Drain to Source ON Resistance
vs Drain Current
WildGoose Semiconductor
Rev.
1.0H
D
, 2021
4
WGD7N40SE
400V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
V
GS
Same Type
50K
Ω
as DUT
Q
g
200nF
10V
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching Test Circuit & Waveforms
BV
DSS
——————–
BV
DSS
– V
DD
L
1
2
2
—-
E
AS
=
L
I
AS
V
DS
I
D
BV
DSS
I
AS
R
G
V
DD
I
D
(t)
V
DD
V
DS
(t)
DUT
t
p
t
p
Time
WildGoose Semiconductor
Rev.
1.0H
D
, 2021
5
WGD7N40SE
400V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
( DUT )
V
DD
Body Diode
Forward Voltage Drop
WildGoose Semiconductor
Rev.
1.0H
D
, 2021
6
WGD7N40SE
400V N-Channel MOSFET
Package Dimension
TO-252
Unit: mm
WildGoose Semiconductor
Rev.
1.0H
D
, 2021
7
