Wild-Goose-WGD7N65SE

Part #	Wild-Goose-WGD7N65SE
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WGD7N65SE

650V N-Channel MOSFET

TO-2

52

3

WGD7N65SE

2

Features:

□

□

Low Intrinsic Capacitances.

1

Excellent Switching Characteristics.

□

Extended Safe Operating Area.

D(2)

□

Unrivalled Gate Charge :Qg=29nC (Typ.).

□

□

V

DSS

=650 V,I

D

=7A

1.Gate

(G)

(D)

R

DS

(on) : 1.

35

Ω

(Max) @V

G

=10V

2.Drain

3.Source

G(1)

□

100% Avalanche

Tested

(S)

S(3)

Absolute Maximum Ratings

(Ta=25

℃

un

less other

w

ise

noted)

Sy mbol

V

DSS

Parameter

Value

650

7.0

Unit

V

Drain-Sourc

e Vo

ltage

T

j

=25

℃

I

D

Drain Current

A

T

j

=100

℃

4.7

V

GSS

E

AS

±

G

ate-Sourc

e

Volt

age

30

V

Single Pulse Avalanche Energy (note

1)

Avalanche Current (note2

)

300

mJ

I

AR

P

D

A

7.0

50

Power Dissipation (Tj=

25

)

℃

W

℃

℃

T

j

Junction T

e

mperatur

e(Max)

St

or

age Temperatur

e

150

T

stg

-55~+

150

Maximum lead temperature for soldering purpose,1/8

’

from

case for 5 se

conds

TL

300

℃

Thermal Characteristics

Sy mbol

Parameter

Typ.

Max.

2.4

Unit

℃

/W

℃

/W

R

θ

JC

R

θ

JA

Thermal Resistance,Junction to Case

–

–

Thermal Resistance,Junc

tion to Ambient

62.5

WildGoose Semiconductor Rev. A1.0,2015

1

WGD7N65SE

650V N-Channel MOSFET

Electrical Characteristics

(Ta=25

℃

unless otherwise noted)

Parameter Test

Condition

Symbol

Min.

Typ.

Max.

Unit

Off Chara cteristics

BV

DSS

V

Drain-Source Breakdown Voltage

I

D

=250

μ

A

，

V

GS

=0

650

–

–

–

I

D

=250

μ

A ,Reference

to 25

℃

Breakdown Vo

lt

age Temperatur

e

△

BVDSS/

△

TJ

0.67

V/

℃

–

Coefﬁcient

V

DS

=650V, V

GS

=0V

V

DS

=520V, Tj=125

℃

V

GS

=+30V, V

DS

=0V

–

–

10

I

DSS

Zero Gate Vo

lt

age Drain

Current

μ

A

100

100

Gate-body leakage Cur

rent,

Forward

Gate-body leakage Cur

rent,

Rev

erse

I

GSSF

I

GSSR

–

–

–

–

nA

V

GS

=-30V, V

DS

=0V

-100

On Characteristics

V

GS(TH)

Date Threshold Voltage

Static Drain-Source

On-Resistance

I

D

=250

μ

A,V

DS

=V

GS

2

–

–

4

V

1.

35

R

DS(ON)

I

D

=3.5A,V

GS

=10V

Ω

1.25

Dynamic Characteristics

Ciss

Coss

Crss

Input Capacitance

acitance

–

–

1000

9

5

–

–

–

V

DS

=25V

，

V

GS

=0

，

f=1.0MHz

pF

Output Cap

Reverse Transfer Capacitance

–

2.4

Sw itching Characteristics

Td(on)

Tr

Turn-On Delay Tim

e

Turn-On Rise Tim

e

–

–

30

80

65

60

29

7

70

170

140

130

38

–

V

DD

=325V

，

I

D

=7A

R

G

=25

Ω

(Not

e 3,4)

n

S

)

T

urn-Off Delay Time

Td(of f

Tf

–

–

Turn-Off Rise

Tim

e

T

ot

al Gate C

harge

Gate-Source Charge

Gate-Drain Charge

Qg

–

V

DS

=520V,V

GS

=10V

，

I

D

=7A (Note3,4)

nC

Qgs

Qgd

–

–

14.5

Drain-Source Diode Characteristics and Maximum Ratings

Is

Max. Diode

F

orward Current

Max. Pulsed Forward Current

Diode Forward V

olt

age

–

–

– –

– –

–

7

28

1.4

–

A

I

SM

V

SD

Trr

I

D

=7A

–

–

V

I

S

=7A,V

GS

=0V

diF/dt=100A/

μ

s

(Note3

)

Reverse Recovery

Time

293

nS

1.7

–

Qrr

Reverse Recover

y

Charge

–

μ

C

Notes : 1, L=

0

.

5

mH, IAS= 7A, VDD=50V, RG=

2

5

Ω

,

Starting

TJ =25

℃

2,

Repetitive Rating : Pulse

w

idth lim

ited by maximum junct

ion

temp

erature

3, Pulse Test : Pulse Width

≤

300

μ

s,

Duty Cycle

≤

2%

4,

Essentially Independent of Operating Temperature

WildGoose Semiconductor Rev. A1.0,2015

2

WGD7N65SE

650V N-Channel MOSFET

Typical Characteristics

WildGoose Semiconductor Rev. A1.0,2015

3

WGF7N65SE

650V N-Channel MOSFET

Typical Characteristics

(Continued)

WildGoose Semiconductor Rev. A1.0,2015

4

WGD7N65SE

650V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

R

D

V

D

V

G

S

90%

D

V

G

S

R

G

10%

V

DD

10V

D.U.T.

V

tR

tF

G

S

to(OFF)

to(ON)

Switching Test Circuit

Switching Waveforms

Same Type

as D.U.T.

K

50 Ω

VGS

12V

Q

G

µF

µF

0.3

0.2

V

D

10V

S

V

GS

Q

G

Q

GS

DUT

S

3mA

Gate Charge Test Circuit

Gate Charge Waveform

L

BV

DSS

V

DS

I

AS

R

D

V

D

D

10V

V

DS(t)

V

DD

D.U.T.

tp

tp

Time

Unclamped Inductive Switching Waveforms

Unclamped Inductive

Switching Test Circuit

WildGoose Semiconductor Rev. A1.0,2015

5

WGD7N65SE

650V N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveform

D.U.T

+

V

DS

_

+

L

_

R

G

Driver

V

DD

*dv/dt controlled by R

G

Same Type

as D.U.T

*I

SD

controlled pulse

period

*D.U.T.-Device Under

Test

V

G

Peak Diode Recovery Test Circuit

P.W.

Period

V

GS

(Driver)

D=

Period

P.W.

V

GS

=10V

I

FM

,Body Diode Forward Current

I

SD

(D.U.T.)

di/dt

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

DS

(D.U.T.)

V

DD

Body Diode

Peak Diode Recovery dv/dt Waveforms

Forward Voltage Drop

WildGoose Semiconductor Rev. A1.0,2015

6

WGD7N65SE

650V N-Channel MOSFET

Package Dimension

TO-252

Unit: mm

WildGoose Semiconductor Rev. A1.0,2015

7