Wild-Goose-WGF10N20
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WG
F
10
N20
2
00V N-Channel MOSFET
TO-220F
WG
F
10
N20
Features
□
Low Intrinsic Capacitances
□
Excellent Switching Characteristics
□
Extended Safe Operating Area
□
Unrivalled Gate Charge :
22
nC (Typ.)
□
BVDSS=
2
00V,ID=10A
1.Gate (G)
2.Drain (D)
3.Source (S)
□
Lower R
DS(on)
: 0.
4
Ω
(Max) @VG=10V
□
100% Avalanche Tested
Absolute Maximum Ratings
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Value
2
00
10.0
7.0
Unit
V
DSS
Drain-Source Voltage
Drain Current
V
T
j
=25
℃
I
D
A
T
j
=100
℃
V
GS(TH)
E
AS
Gate Threshold Voltage
±30
160
V
Single Pulse Avala
Energy (note1)
mJ
I
AR
P
D
T
j
Avalanche Cur
(note2)
Power Dissipa
ion (Tj=25
℃
)
Junc
T
e
mperature(Max)
Storage
T
e
mperature
9.0
50
A
W
℃
℃
150
T
stg
-55~+150
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
TL
300
℃
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
2.5
Unit
℃
/W
℃
/W
R
θ
JC
R
θ
JA
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
–
–
62.5
WildGoose Semiconductor
Rev. 1.0
HD
, 2015
1
WG
F
10
N20
2
00V N-Channel MOSFET
Electrical Characteristics
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ. Max
Units
Off Characteristics
BV
DSS
△
BV
DSS
△T
J
Drain-Sourse Breakdown Voltage
200
—
—
0.55
—
—
—
V
ID=250
μ
A
，
VGS=0
I
D
=250
μ
A ,Reference
to 25
℃
/
Breakdown Voltage
T
e
mperature
Conficient
V/
℃
Vds=
20
0V, Vgs=0V
—
1
μ
A
μ
A
nA
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
10
Vds=
16
0V,
T
c
=125
℃
Gate-body leakage Current,
Forward
—
—
—
—
100
Vgs=+30V, Vds=0V
Gate-body leakage Current,
Reverse
100
nA
Vgs=-30V, Vds=0V
On Characteristics
V
GS(th)
Date Threshold Voltage
Id=250uA,Vds=Vgs
—
4
V
Static Drain-Sourse
On-Resistance
—
R
DS(on)
Id=
5
A,Vgs=10V
—
0.
4
Ω
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
—
—
—
710
85
–
–
–
pF
pF
pF
VDS=25V
，
VGS=0
，
Output Capacitance
f=1.
MHz
Reverse Transfer Capacitance
2
2
Switching Characteristics
Td(on)
Tr
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
T
o
tal Gate Charge
Gate-Sou
se Charge
Gate-Drai
Charge
—
—
—
—
—
—
11
70
60
6
5
2
2
4
25
14
0
120
130
3
0
nS
nS
nS
nS
nC
nC
nC
VDD=
10
0V
，
ID=
10
A
，
RG=25
Ω
(Note 3,4)
Td(off)
Tf
Qg
VDS=
160,V
GS=10V
，
ID=
10
A (Note 3,4)
Qgs
Qgd
—
—
1
1
Drain-Sourse Diode Characteristics and Maximum Ratings
10
40
I
S
Maximun Continuous Drain-Sourse Diode Forward Current
Maximun Plused Drain-Sourse DiodeForwad Current
—
—
—
—
A
A
I
SM
Drain-Sourse Diode Forward
V
SD
Id=
10
A
—
—
1.45
V
Voltage
I
S
=
10
A,V
GS
=0V di
F
/
dt=100A/
μ
s
(Note3)
trr
Qrr
Reverse Recovery Time
—
—
14
0
—
—
nS
Reverse Recovery Charge
2.2
μ
C
1, L=8mH, IAS=
10
A, VDD=50V, RG=25
Ω
, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse
T
e
st : Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
*Notes
4, Essentially Independent of Operating
T
e
mperature
WildGoose Semiconductor
Rev. 1.0
HD
, 2015
2
WG
F
10
N20
2
00V N-Channel MOSFET
Typical Characteristics
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10
1
10
0
10
-1
10
1
150
o
C
Bottom :
4.5 V
25
o
C
-55
o
C
10
0
※
Notes :
μ
1. 250
s Pulse Test
※
Notes :
1. V
DS
= 40V
℃
2. T
C
= 25
μ
2. 250
s Pulse Test
-1
10
10
-1
10
0
10
1
2
4
6
8
1
V
GS
,
G
ate-Source Voltage [V]
V
DS
,
D
rain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer C
racteristics
1.5
1.0
0.5
0.0
10
1
V
G
S
= 10V
10
V
G
S
= 20V
℃
150
℃
25
※
Notes :
1. V
GS
= 0V
μ
2. 250
s Pulse Test
※
℃
Note : T = 25
J
-1
10
0
5
10
15
20
25
30
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
,
S
ource-Drain voltage [V]
Figure 3. On-Resistance Variation
vs
Drain Current and Gat
ltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
1200
12
10
8
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted)
oss
= C
ds
+ C
gd
rss
= C
gd
C
C
V
DS
= 40V
V
DS
= 100V
1000
800
400
200
0
V
DS
= 160V
C
iss
C
oss
6
C
rss
4
※
Note ;
2
1. V
GS
= 0 V
2. f = 1 MHz
※
Note : I
D
= 9.5A
20
0
-1
10
0
10
1
0
4
8
12
16
24
10
Q
G
, Total Gate Charge [nC]
V
DS
,
D
rain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
WildGoose Semiconductor
Rev. 1.0
HD
, 2015
3
WG
F
10
N20
2
00V N-Channel MOSFET
Typical Characteristics
(Continued)
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※
Notes :
0.9
1. V
G
S
= 0 V
※
Notes :
μ
2. I
D
=
2
50
A
1. V
G
S
=
V
2. I
D
= 4.75
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T
J
, Junction Temperature [
o
C
]
T,
J
unction Temperature [
o
C
]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resis
Variation
vs Tempera
e
10
Operation in This Area
10
2
is Limited by R
D
S(on)
8
6
4
2
0
100
µ
s
1
m
s
10 ms
DC
10
1
10
0
※
Notes :
1. T
C
= 25
o
2. T
J
= 150
o
3. Single Pulse
-1
10
C
C
-2
10
25
50
75
100
125
150
10
0
10
1
10
2
℃
]
T
C
,
C
ase Temperature [
V
DS
,
D
rain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9-1. Maximum Safe
ating Area
0
D = 0
.
5
※
N o
t
e s
:
0
.
2
0
.
1
℃
/W M
a x .
1 .
Z
θ
(
t)
=
1
.
7 4
2 .
D u
t
y
F a c to r,
D = t
1
/
t
2
3 .
T
J
M
T
C
P
D
Z
θ
(
t)
J C
–
=
*
M
J C
0
.
0 5
1 0
–
1
0
.
0 2
0
.
0 1
s in g le
p u ls e
1 0
–
2
1 0
–
5
1 0
–
4
1 0
–
3
1 0
–
2
1 0
–
1
1 0
0
1 0
1
t
1
, S
q u a
r
e
W a
v e
P u ls e
D u ra tio n
[s e c ]
Figure 11-1. Transient Thermal Response Curve
WildGoose Semiconductor
Rev. 1.0
HD
, 2015
4
WG
F
10
N20
2
00V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
V
GS
Same Type
50K
Ω
as DUT
Q
g
12V
200nF
10V
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
10V
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unc
amped Inductive Switching Test Circuit & Waveforms
BV
DSS
——————–
BV
DSS
– V
DD
L
1
2
2
—-
E
AS
=
L
I
AS
V
DS
I
D
BV
DSS
I
AS
R
G
V
DD
I
D
(t)
V
DD
V
DS
(t)
DUT
10V
t
p
t
p
Time
WildGoose Semiconductor
Rev. 1.0
HD
, 2015
5
WG
F
10
N20
2
00V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
ntrolled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
S
di/dt
(
UT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
WildGoose Semiconductor
Rev. 1.0
HD
, 2015
6
WG
F
10
N20
2
00V N-Channel MOSFET
Package Dimension
TO-220F
Unit: mm
Size
Size
Size
Max
12.78 13.18
Size
Symbol
Symbol
Symbol
Symbol
Min
Max
Min
Max
Min
Min
Max
W
9.96
10.36
W4
L
L1
L2
0.25
15.67
6.48
0.45
16.07
6.88
L3
T
T1
T2
T3
G(Φ)
0.45
3.08
0.60
3.28
W1
W2
W3
2.54 (TYP)
4.50
2.34
2.56
4.90
2.74
2.96
0.70
1.24
0.90
1.47
3.20
3.40
WildGoose Semiconductor
Rev. 1.0
HD
, 2015
7
