Wild-Goose-WGF12N60SE
| Part # | Wild-Goose-WGF12N60SE |
Download  | Wild-Goose-WGF12N60SE |
WGF12N60SE
600V N-Channel MOSFET
TO-220F
WGF12N60SE
Features:
□
Low Intrinsic Capacitances
□
Excellent Switching Characteristics
□
Extended Safe Operating Area
□
Unrivalled Gate Charge :Qg= 42nC (Typ.)
□
V
DSS
=600V,I
D
=12A
1.Gate (G)
2.Drain (D)
3.Source (S)
□
R
DS(on)
:0.60 Ω (Max) @VG=10V
□
100% Avalanche Tested
Absolute Maximum Ratings
(Ta=25
℃
unless otherwise noted)
Symbol
Parameter
Value
600
12
Unit
V
DSS
Drain-Source Voltage
Drain Current
V
T
j
=25
℃
I
D
A
T
j
=100
℃
7.9
V
GSS
E
AS
Gate-Source Voltage
±30
870
V
Single Pulse Avalanche Energy (note1)
mJ
I
AR
P
D
T
j
Avalanche Current (note2)
Power Dissipation (Tj=25
℃
)
Junction Temperature(Max)
Storage Temperature
12
70
A
W
℃
℃
150
T
stg
-55~+150
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
TL
300
℃
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
2.27
62.5
Unit
℃
/W
℃
/W
R
θJC
R
θJA
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
–
–
WildGoose Semiconductor
Rev. A1.0, 2018
1
WGF12N60SE
600V N-Channel MOSFET
Electrical Characteristics
(Ta=25
℃
unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250μA
，
V
GS
=0
600
–
0.71
–
–
–
V
I
D
=250μA ,Reference
to 25
℃
Breakdown Voltage Temperature
Coefficient
△
BVDSS/
△
TJ
–
–
V/
℃
V
DS
=600V, V
GS
=0V
10
I
DSS
Zero Gate Voltage Drain Current
μA
nA
V
DS
=480V, Tj=125
℃
100
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
I
GSSF
I
GSSR
On Characteristics
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
–
–
–
–
100
-100
V
GS(TH)
R
DS(ON)
Date Threshold Voltage
I
D
=250μA,V
DS
=V
GS
I
D
=6.0A,V
GS
=10V
2
–
–
–
4
V
Ω
Static Drain-Source
On-Resistance
0.60
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
–
–
–
1920
166
18
–
–
–
V
DS
=25V
，
V
GS
=0
，
f=1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Switching Characteristics
Td(on)
Tr
Turn-On Delay Time
–
–
–
–
–
–
–
30
80
70
165
300
165
47
–
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=300V
，
I
D
=12A
R
G
=25Ω (Note 3,4)
ns
Td(off)
Tf
144
77
Qg
44
V
DS
=480V,V
GS
=10V
，
I
D
=12A (Note 3,4)
Qgs
Qgd
6.7
18.5
nC
–
Drain-Source Diode Characteristics and Maximum Ratings
Is
Max. Diode Forward Current
Max. Pulsed Forward Current
Diode Forward Voltage
–
–
–
–
–
–
12
48
1.4
–
A
I
SM
V
SD
Trr
–
–
–
I
D
=12A
V
I
S
=12A,V
GS
=0V
diF/dt=100A/μs
(Note3)
Reverse Recovery Time
380
nS
Qrr
Reverse Recovery Charge
–
3.5
–
μC
Notes : 1, L=17.1mH, IAS=12A, VDD=50V, RG=25 Ω, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature
WildGoose Semiconductor
Rev. A1.0, 2018
2
WGF12N60SE
600V N-Channel MOSFET
Typical Characteristics
V
GS
To
p
:
15.
0
V
10.
0
V
8.
0
V
7.
0
V
6.
0
V
5.
5
V
5.
0
V
10
1
150
o
C
10
1
Botto
m
:
4
.5
V
-55
o
C
25
o
C
10
0
※
Notes :
1. 250μ
T
C
= 25
℃
10
0
※
s
Pulse Tes
t
2
.
Note
s
:
1.
V
DS
=
4
0V
μ
2.
250
s
P
uls
e
T
est
10
-1
10
0
10
1
2
4
6
8
10
V
GS
, Gate-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.5
1.0
0.5
10
1
V
GS
= 10V
10
0
150
℃
V
G
S
=
2
0V
※
Notes :
1.
V
GS
=
0
V
μ
25
℃
2.
250
s
P
uls
e
T
est
※
℃
Note : T
J
= 25
10
-1
0.2
0
5
10
15
20
25
30
3
5
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3500
12
10
8
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
V
DS
= 120V
V
DS
= 300V
3000
2500
2000
1500
1000
500
V
DS
= 480V
C
iss
C
oss
6
※
Notes;
4
1.
V
G
S
=
0
V
2.
f =
1
M
Hz
C
rss
2
0
※
Note : I
D
= 12A
40
0
10
-1
0
10
10
1
0
10
20
30
50
Q
G
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
WildGoose Semiconductor
Rev. A1.0, 2018
3
WGF12N60SE
600V N-Channel MOSFET
Typical Characteristics
(Continued)
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
※
Notes :
0.9
0.8
1.
V
G
S
=
0V
2.
I
D
=
2
50
μ
A
※
Notes :
1. V
GS
= 10 V
2. I
D
= 6.0 A
0.5
0.0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T , Junction Temperature [
o
C]
T, Junction Temperature [
o
C]
J
J
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown VoltageVariation
vs Temperature
14
12
10
8
Operatio
n
in Th
i
s
A
rea
10
2
is Limite
d
b
y R
DS(on)
10
s
10
0
s
10
1
1 ms
1
0
ms
100 ms
DC
10
0
6
4
10
-1
10
-2
※
Notes :
1.
T
C
= 25
o
C
2
2. T
=
1
5
0
o
C
J
3. Singl
e
P
ulse
0
25
50
75
100
125
150
10
0
10
1
10
2
10
3
℃
T
C
, Case Temperature [
]
V
DS
, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9-2. Maximum Safe Operating Area
D=
2
0 . 5
0.
0
-1
-2
10
10
10
※
No te s :
1 . Z
JC
(t) =
2 . 4 3
2 .
D
θ
u ty
F a c to r,
D = t
1
/t
2
℃
/W M a x .
0. 1
3 . T
– T
=
P
DM
* Z
JC
(t)
JM
C
θ
0. 05
0. 02
0. 01
P
DM
t
1
t
2
s in g le p u ls e
-5
-4
-3
-2
-1
0
1
10
10
10
10
10
10
10
t
1
, S q uare W av e
P u ls e D uration [s ec ]
Figure 11-2. Transient Thermal Response Curve
WildGoose Semiconductor
Rev. A1.0, 2018
4
WGF12N60SE
600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
V
GS
Same Type
50KΩ
as DUT
Q
g
12V
200nF
10V
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
R
L
V
DS
V
DS
90%
V
DD
V
GS
R
G
10%
V
GS
DUT
10V
t
d(on)
t
r
t
d(off)
t
f
t
off
t
on
Unclamped Inductive Switching Test Circuit & Waveforms
L
BV
DSS
2
——————–
1
–
–
–
–
E
=
LI
AS
V
DS
2
BV
DSS
–
V
DD
BV
DSS
I
AS
I
D
R
G
V
DD
I
D
(t)
V
DS
(t)
V
DD
DUT
10V
t
p
t
p
Time
WildGoose Semiconductor
Rev. A1.0, 2018
5
WGF12N60SE
600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
V
DS
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
Gate Pulse Period
D =
V
GS
10V
( Driver
)
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
WildGoose Semiconductor
Rev. A1.0, 2018
6
WGF12N60SE
600V N-Channel MOSFET
Package Dimension
TO-220F
Unit: mm
Size
Size
Size
Max
12.78 13.18
Size
Symbol
Symbol
Symbol
Symbol
Min
Max
Min
Max
Min
Min
Max
W
9.96
10.36
W4
L
L1
L2
0.25
15.67
6.48
0.45
16.07
6.88
L3
T
T1
T2
T3
G(Φ)
0.45
3.08
0.60
3.28
W1
W2
W3
2.54 (TYP)
4.50
2.34
2.56
4.90
2.74
2.96
0.70
1.24
0.90
1.47
3.20
3.40
WildGoose Semiconductor
Rev. A1.0, 2018
7
