Wild-Goose-WGF12N70SE
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WGF12N70SE
700V N-Channel MOSFET
TO-220F
WGF12N70SE
Features:
□
Low Intrinsic Capacitances
□
Excellent Switching Characteristics
□
Extended Safe Operating Area
□
Unrivalled Gate Charge :Qg= 42nC (Typ.)
□
BVDSS=700V,ID=12A
1.Gate (G)
2.Drain (D)
3.Source (S)
□
R
DS(on)
:0.
7
Ω
(Max) @VG=10V
□
100% Avalanche Tested
Absolute Maximum Ratings
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Value
700
12
Unit
V
DSS
Drain-Source Voltage
Drain Current
V
T
j
=25
℃
I
D
A
T
j
=100
℃
7.9
V
GSS
±30
220
V
Gate – Source voltage
E
AS
Single Pulse Aval
e Energy (note1)
mJ
I
AR
P
D
T
j
Avalanche Cu
(note2)
Power Dissipation (Tj=25
℃
)
Junc
n
T
e
mperature(Max)
Storage
T
e
mperature
12
51
A
W
℃
℃
150
T
stg
-55~+150
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
TL
300
℃
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
2.
45
62.5
Unit
℃
/W
℃
/W
R
θ
JC
R
θ
JA
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
–
–
WildGoose Semiconductor
Rev. A1.0, 2015
1
WGF12N70SE
700V N-Channel MOSFET
Electrical Characteristics
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250
μ
A
，
V
GS
=0
700
–
0.71
–
–
–
V
Breakdown Voltage
T
e
mperature
Coefficient
I
D
=250
μ
A ,Reference
to 25
℃
△
BVDSS/
△
TJ
V/
℃
–
–
V
DS
=700V, V
GS
=0V
10
I
DSS
Zero Gate Voltage Drain Current
μ
A
V
DS
=520V, Tj=125
℃
100
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
I
GSSF
I
GSSR
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
–
–
–
–
0
nA
-100
On Characteristics
V
GS(TH)
Date Threshold Voltage
R
DS(ON)
I
D
=250
μ
A,V
DS
=V
GS
2
–
–
4
V
Static Drain-Source
On-Resistance
–
I
D
=6.0A,V
GS
=10V
0.7
Ω
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
–
–
–
1
799
166
18
–
–
–
V
DS
=25V
，
V
GS
=0
，
f=1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Switching Characteristics
Td(on)
Tr
Turn-On Delay Time
–
–
–
–
–
–
–
30
80
70
165
300
165
47
–
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Rise Time
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=300V
，
I
D
=12A
R
G
=25
Ω
(Note 3,4)
ns
Td(off)
Tf
144
77
Qg
44
V
DS
=520V,V
GS
=10V
，
I
D
=12A (Note 3,4)
Qgs
Qgd
6.7
18.5
nC
–
Drain-Source Diode Charac
tics and Maximum Ratings
Is
Max. Diode Forward Current
Max. Pulsed Forward Current
Diode Forward Voltage
–
–
–
–
–
–
12
48
1.4
–
A
I
SM
V
SD
Trr
–
–
–
I
D
=12A
V
I
S
=12A,V
GS
=0V
diF/dt=100A/
μ
s
(Note3)
Reverse Recovery Time
380
nS
Qrr
Reverse Recovery Charge
–
3.5
–
μ
C
Notes : 1, L=
0.5
mH, IAS=12A, VDD=50
V
,
R
G=2
5
Ω
, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse
T
e
st : Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
4, Essentially Independent of Operating
T
e
mperature
WildGoose Semiconductor
Rev. A1.0, 2015
2
WGF12N70SE
700V N-Channel MOSFET
Typical Characteristics
V
G
S
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
10
1
150
o
C
10
1
B
otto
m
:
4
.5
V
-55
o
C
25
o
C
10
0
※
Notes :
10
0
μ
1. 250
s Pulse Test
※
Notes :
℃
2. T
C
=
2
5
1. V
= 40V
DS
μ
2. 250
s Pulse T
t
-1
10
10
0
10
1
2
4
6
8
10
V
G
S
,
G
ate-Source Voltage
V
]
V
D
S
,
D
rain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transf
aracteristics
1.5
1.0
0.5
1
10
V
G
S
= 10V
0
℃
150
V
GS
= 20V
※
Notes :
1. V
= 0V
2. 250
s Pulse Test
℃
25
GS
μ
※
℃
Not
e
: T =
2
5
J
-1
10
0
5
10
15
20
25
30
35
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
,
D
rain Current [A]
V
S
D
,
S
ource-Drain voltage [V]
Figure 3. On-Resistance Variation
vs
Drain Current and
Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3500
12
10
8
C
iss
=
C
g
s
+
C
g
d
(C
d
s
=
s
horted)
C
o
ss
=
C
d
s
+ C
gd
V
DS
= 120V
V
DS
= 300V
C
r
ss
= C
gd
3000
2500
2000
1500
1000
500
V
DS
= 480V
C
iss
C
oss
6
※
Notes ;
4
1. V
G
S
= 0 V
2. f =
1
M
Hz
C
rss
2
※
Not
e
:
I
D
= 12A
40
0
0
10
-1
10
0
10
1
0
10
20
30
50
Q
G
, Total Gate Charge [nC]
V
D
S
,
D
rain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
WildGoose Semiconductor
Rev. A1.0, 2015
3
WGF12N70SE
700V N-Channel MOSFET
Typical Characteristics
(Continued)
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※
N
otes :
0.9
1. V
G
S
= 0 V
※
Not
:
2.
I
D
=
2
50
μ
A
1. V
V
2. I
D
G
=
S
6.0 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T,
J
unction Temperature [
o
C
]
T,
J
unction Temperature [
o
C
]
J
J
Figure 8. On-Resis
Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
14
12
10
8
Operation in This Area
is Limited by R
D
S(on)
2
10
10
µ
s
100
µ
s
1
m
s
10 ms
100 ms
DC
1
10
0
10
6
4
-1
10
※
Notes :
1. T
C
=
2
5
o
C
2
2. T
= 150
o
C
J
3. Single Pulse
0
25
-2
50
75
100
125
150
10
0
1
2
3
10
10
10
10
℃
]
T
C
,
C
ase Temperature [
V
D
S
,
D
rain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9-2. Maximum Safe
ting Area
D = 0
.
5
1
0
0
0
.
2
0
.
1
※
N
o
t
e
s
1. Z
θ
J
C
(
t)
2. D
uty Factor, D
=t
1
/t
2
:
℃
/W M
ax.
=
2.43
3. T
J
M
–
T
C
=
P
D M
*
Z
θ
J
C
(
t)
0
.
0 5
1
0
–
1
0
.
0 2
0
.
0 1
P
DM
t
1
t
2
s in g le
p u ls e
1
0
–
2
1
0
–
5
1
0
–
4
1
0
–
3
1
0
–
2
1
0
–
1
1
0
0
1
0
1
t
1
, S
q u a
r
e
W a v e
P u ls e
D u ra tio n
[s e c ]
Figure 11-2. Transient Thermal Response Curve
WildGoose Semiconductor
Rev. A1.0, 2015
4
WGF12N70SE
700V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
V
GS
Same Type
50K
Ω
as DUT
Q
g
12V
200nF
10V
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
10V
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching Test Circuit & Waveforms
BV
DSS
——————–
BV
DSS
– V
DD
L
1
2
2
—-
E
AS
=
L
I
AS
V
DS
I
D
BV
DSS
I
AS
R
G
V
DD
I
D
(t)
V
DD
V
DS
(t)
DUT
10V
t
p
t
p
Time
WildGoose Semiconductor
Rev. A1.0, 2015
5
WGF12N70SE
700V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
ontrolled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
S
di/dt
(
UT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
WildGoose Semiconductor
Rev. A1.0, 2015
6
WGF12N70SE
700V N-Channel MOSFET
Package Dimension
TO-220F
Unit: mm
Size
Size
Size
Max
12.78 13.18
Size
Symbol
Symbol
Symbol
Symbol
Min
Max
Min
Max
Min
Min
Max
W
9.96
10.36
W4
L
L1
L2
0.25
15.67
6.48
0.45
16.07
6.88
L3
T
T1
T2
T3
G(Φ)
0.45
3.08
0.60
3.28
W1
W2
W3
2.54 (TYP)
4.50
2.34
2.56
4.90
2.74
2.96
0.70
1.24
0.90
1.47
3.20
3.40
WildGoose Semiconductor
Rev. A1.0, 2015
7
