Wild-Goose-WGF12N80S
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WGF12N80S
Power
800V
N-Channel
MOSFET
WGF12N80S
Features:
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge :Qg=
51
nC
(Typ.).
□
BVDSS=8
0
0
V
,
I
D
=12 A
□
R
DS
(on) :
(Typ @V
)
G
=10V
0.68
Ω
□
100% Avalanche
T
e
sted
Absolute
（
T
J
= 25
℃
unless otherwise specified
）
：
Parameter
Symbol
V
DSS
Rating
800
12
Units
V
Drain-to-Source
V
o
ltage
Continuous Drain Current T
C
= 25 °C
Continuous Drain Current T
C
= 100 °C
Pulsed Drain Current T
C
= 25 °C
Gate-to-Source
V
o
ltage
A
I
D
7.5
A
a1
48
A
I
DM
V
GS
V
±
30
a2
Single Pulse Avalanche En
gy
Peak Diode Recovery dv/dt
Power Dissipa
T
C
= 25 °C
1444
mJ
E
AS
a3
5.0
41
V/ns
W
dv/dt
P
D
Derating Factor above 25°C
0.328
3000
W/
℃
V
Gate source ESD (HBM-
C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
V
ESD(G-S)
T
J
，
T
stg
T
L
150
，
–
55 to 150
℃
℃
300
Parameter
Max.
Symbol
Units
Junction-to-Case
R
θ
3.02
62.5
℃
/W
℃
/W
JC
Junction-to-Ambient
R
θ
JA
WildGoose Semiconductor
Rev. 1.0
S
, 2015
1
WGF12N80S
Power
800V
N-Channel
MOSFET
Electrical Characteristics
（
T
J
= 25
℃
unless otherwise specified
）
：
OFF Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
Min.
800
—
Typ.
—
Max.
—
V
GS
=0
V
,
I
D
=250µA
Drain to Source Breakdown
V
o
ltage
Bvdss Temperature Coefficient
V
V
DSS
ID=250uA,Reference2
5
℃
V/
℃
0.9
—
—
Δ
BV
DSS
/
Δ
T
J
V
DS
=800
V
,
V
GS
= 0
V
,
T
J
= 25
℃
V
DS
=640
V
,
V
GS
= 0
V
,
T
J
= 125
℃
—
25
Drain to Source Leakage Current
µA
I
DSS
250
10
V
DS
=0
V
,
V
GS
= 20V
V
DS
=0
V
,
V
GS
= -20V
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
µA
µA
I
GSS(F)
I
GSS(R)
—
—
—
—
-10
ON Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
Min.
—
Typ. Max.
V
GS
=10
V
,
I
D
=5A
Drain-to-Source On-Resistance
Gate Threshold
V
o
ltage
R
DS(ON)
V
GS(TH)
0.68 0.75
Ω
V
DS
= V
GS
, I
D
= 250µA
2.0
—
4.0
V
Pulse width tp
≤
300µs,
δ≤
2%
Dynamic Characteristics
Rating
Typ.
15
Parameter
Test Conditions
Symbol
Units
Min.
Max.
V
DS
=15
V
,
I
D
=5A
f = 1.0MHz
Forward Trans conductance
Gate resistance
g
fs
—
S
R
g
3.1
Ω
Input Capacitan
e
C
iss
C
oss
C
rss
—
—
—
2764
224
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Output Capacit
e
pF
Reverse Trans
er Capacitance
11.4
Resistive Switchin
haracteristics
Rating
Typ.
29.4
39.6
29
Parameter
Test Conditions
Symbol
Units
ns
Min.
—
Max.
Turn-on Delay Time
Rise Time
t
d(ON)
tr
t
d(OFF)
t
f
—
I
D
=12A V
DD
= 400V
R
G
=10
Ω
Turn-Off Delay Time
Fall Time
—
—
40
Total Gate Charge
Gate to Source Charge
Gate to Drain (
“
Miller
”
)Charge
Q
g
—
51
I
D
=12A VDD
=640V
V
GS
= 10V
Q
gs
Q
gd
—
12.4
16.4
nC
—
WildGoose Semiconductor
Rev. 1.0
S
, 2015
2
WGF12N80S
Power
800V
N-Channel
MOSFET
Source-Drain Diode Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
Min.
—
Typ.
—
Max.
12
48
1.5
—
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward
V
o
ltage
I
S
A
A
I
SM
V
SD
trr
—
—
I
S
=12A,V
GS
=0V
—
—
V
Reverse Recovery Time
I
S
=12A,T
j
= 25
°
C
—
721
8650
23.9
ns
n
C
A
dI
F
/dt=100A/us,
V
GS
=0V
Reverse Recovery Charge
Qrr
I
RRM
—
—
Reverse Recovery Current
—
—
Pulse width tp
≤
300µs,
δ≤
2%
a1
：
Repetitive rating; pulse width limited by maximum junction temperature
a2
：
L=10.0mH, I
D
=17.0A, Start T
J
=25
℃
a3
：
I
SD
=12A,di/dt
≤
100A/us,V
DD
≤
BV
DS,
Start T
J
=25
℃
WildGoose Semiconductor
Rev. 1.0
S
, 2015
3
WGF12N80S
Power
800V
N-Channel
MOSFET
Typical Characteristics
Figure 1
Maximum Forward Bias Safe Operatin
g
A
rea
Figure 2
Maximu
wer dissipation vs Case Temperature
Figure 3
Maximum Continuous Drain Current vs Case Temperature
Figure
4
T
ypical
Output Characteristics
Figure
5 Maximum
Effective Thermal Impedance , Junction to Case
WildGoose Semiconductor
Rev. 1.0
S
, 2015
4
WGF12N80S
Power
800V
N-Channel
MOSFET
Typical Characteristics
(Continued)
Figure
7
Typ
l Body Diode Transfer Characteristics
Figure
6
Typical Transfer Characteristics
Figure
9
Typical Drian to Source on Resistance
vs Junction Temperature
Figure
8
Typical Drain to Source ON Resistance
vs Drain Current
p
WildGoose Semiconductor
Rev. 1.0
S
, 2015
5
WGF12N80S
Power
800V
N-Channel
MOSFET
Typical Characteristics
(Continued)
Figure 10
Typical Theshold
V
o
ltage vs Junction Temperature
Figure 11
Typical Breakdown
V
o
ltage vs Junction Temperature
Figure 13
Typical Gate Charge vs Gate to Source
V
o
ltage
Figure 12
Typical Capacitance vs Drain to Source
V
o
ltage
WildGoose Semiconductor
Rev. 1.0
S
, 2015
6
WGF12N80S
Power
800V
N-Channel
MOSFET
and Waveform
T
e
st
Circuit
：
Figure 14. Gate Charge Test Circuit
Figure 15. Gate Charge Waveforms
Figure 16. Resistive Switching Test Circuit
Figure 17. Resistive Switching Waveforms
WildGoose Semiconductor
Rev. 1.0
S
, 2015
7
WGF12N80S
Power
800V
N-Channel
MOSFET
Figure 18. Diode Reverse Recovery Test Circuit
Figure 19. Diode Reverse Recovery Waveform
Figure20.Unclamped Inductive Switching Test Circuit
Figure21.Unclamped Inductive Switching Waveform
WildGoose Semiconductor
Rev. 1.0
S
, 2015
8
WGF12N80S
Power
800V
N-Channel
MOSFET
Package Dimension
WildGoose Semiconductor
Rev. 1.0
S
, 2015
9
