Wild-Goose-WGF4N65SE
| Part # | Wild-Goose-WGF4N65SE |
Download  | Wild-Goose-WGF4N65SE |
WGF
4
N65S
E
650V N-Channel MOSFET
T
O
–
220F
WGF
4
N65S
E
Features:
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe
Operatin
g
Area.
□
Unrivalled Gate Charge :Qg=
14
nC (Typ.).
□
BVDSS=650 V,I
D
=
4
A
D
(
2
)
1.Gate
2.Drain
(G)
(D)
□
R
D
S
(on) :
2
.
50
Ω
(Max) @
V
G
=10V
□
100% Avalan
c
h
e Tested
G
(
1
)
3.Source (S)
S
(
3
)
Absolute Maximum Ratings
(
T
a
=25
℃
un
less other
w
ise
noted)
S
y
m
bol
V
DSS
Parameter
Value
650
4
.0
Unit
Drain-Sourc
e Vo
ltage
Drain Current
V
T
j
=2
5
℃
I
D
A
T
j
=10
0
℃
2
.7
V
GS(TH)
E
AS
Gate
Threshold Volt
age
3
0
V
Single Pulse Avalanche Energy (note
1)
Avalanche Current (note2
)
120
mJ
I
AR
P
D
T
j
4
.0
50
A
W
℃
℃
Power Dissipation (Tj=
25
℃
)
Jun
n T
e
mperatur
e(Max)
150
T
stg
St
orage
T
e
mperatur
e
-55~+
150
Maximum lead temperature for soldering purpose,1/8
’
from
case for 5 se
conds
TL
300
℃
Thermal Characteristics
Symbol
Parameter
Typ.
–
Max.
2.4
Unit
R
θ
JC
R
θ
JA
Thermal Resistance,Junction to Case
℃
/W
℃
/W
Thermal Resistance,Jun
c
t
ion to Ambient
62.5
WildGoose S
emiconductor Rev
. A1.0, 2015
1
WGF
4
N65S
E
650V N-Channel MOSFET
Electrical Characteristics
(
T
a
=25
℃
unless otherwise noted)
Parameter
T
e
st
Condition
Symbol
Min.
Typ.
Max.
Unit
Off Char
a
c
teristics
B
V
DSS
Drain-Source Breakdown Volt
age
I
D
=25
0
μ
A
，
V
G
S
=0
650
–
0.67
–
–
V
Breakdown Vo
lt
age
T
e
mperatur
e
Coefficient
I
D
=25
0
μ
A ,Reference
to 2
5
℃
△
B
V
D
SS
/
△
TJ
℃
–
–
–
V/
V
D
S
=650
V
,
V
G
S
=0V
10
I
DSS
Zero Gate Vo
lt
age Drain
Current
μ
A
V
D
S
=520
V
,
T
j=12
5
℃
100
Gate-bo
d
y
l
eakage Cur
rent,
Forward
Gate-bo
d
y
l
eakage Cur
rent,
Rev
erse
I
GSSF
I
GSSR
V
G
S
=+30
V
, V
=
0V
–
–
–
100
DS
nA
V
G
S
=-30
V
, V
D
S
=0V
-100
On Characteristics
V
GS(TH)
Date Threshol
d
V
oltage
Static Drain-Source
On-Resist
ance
I
D
=250
μ
A,V
D
S
=V
GS
I
D
=
2.0
A,V
G
S
=10V
2
–
–
4
V
2
.
5
R
DS(ON)
Ω
Dynamic Characteristics
Ciss
Coss
Crss
Input
–
–
–
560
48
–
–
–
Capacitance
V
D
S
=25V
，
V
GS
=
0
，
f=1.0MHz
Output
pF
Capacitance
Reverse Transfer
Capacit
ance
5.4
S
w
i
tching Characteristics
T
d
(on)
–
–
–
–
–
–
–
25
45
25
T
urn-On Delay Time
Tr
T
d
(o
f
f
)
Tf
T
u
rn-On Rise
Tim
T
u
r
n-Off Delay Time
Turn-Off Rise
Tim
e
T
ot
al Ga
harge
Gate-Source Charge
Gate-D
r
ain
Charge
V
DD
=325V
，
I
D
=
4
A
R
G
=25
Ω
(Not
e 3,4)
n
S
35
Qg
14
.
3
2.8
4.5
V
D
S
=520
V
,
V
G
S
=10V
，
I
D
=
4
A (Note3,4)
Qgs
Qgd
–
nC
–
Drain-Source
Diode Characteristics
and Maximum Ratings
Is
Max. Diod
e
Forwar
d Current
Max. Pulsed Forward Current
Diode Fo
r
w
ard V
olt
age
–
–
– –
– –
–
4
16
1.4
–
A
I
SM
V
SD
T
r
r
I
D
=
4
A
I
S
=
4
A,V
GS
=0V
diF/
d
t
=100A/
–
–
V
Reverse
Recovery
Time
393
nS
μ
s
Qrr
Revers
e Recover
y Charge
–
1.5
–
μ
C
(Note3
)
,
Starting TJ =25
℃
Notes : 1, L=
0
.
5
mH, IAS=
4
A, VDD=50
V
,
R
G=25
Ω
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse
T
e
st : Pulse Width
≤
300
μ
s
,
Duty Cycle
≤
2
%
4
,
Essentially Independen
t
of Operating
T
e
mperature
WildGoose
S
emiconductor Rev.
A1.0, 2015
2
WGF
4
N65
SE
650V N-Channel MOSFET
Typical Characteristics
Breakdown Voltage Variation
VS.
T
e
mperayure
On-Resistance Junction
T
e
mperature
3.0
2.5
2.0
1.5
1.0
1.2
1
.1
1.0
0.9
0.8
0.5
0.0
200
100
-100 -50
0
50
150
250
50
-100
0
100
150
200
-50
Junction
T
e
mperture,Tj(
℃
)
Maximum Safe Operating Area
Junction
T
e
mperature,Tj(
℃
)
Maximum Drain Current
VS.Case
T
e
mperature
10
2
5
4
3
1
10
µs
100
1ms
10ms
2
1
0
10
0
DC
-1
10
10
0
50
75
10
1
10
3
25
100
125
150
10
2
Drain-Source Voltage,VDS(V)
Transfer Characteristics
Case
T
e
mperature,TC(
℃
)
On-State Characteristics
10
10
1
150
℃
25
℃
1
0.1
0.1
8
10
2
4
6
1
100
10
0.1
WildGoose
S
e
miconductor Rev
. A1.0, 2015
3
WGF
4
N65
SE
650V N-Channel MOSFET
Typical Characteristics
(Continued)
On-Resistance Variation vs.
Drain Currentand Gate Voltage
Capacitance Characteristics
(Non-Repetitive)
6
5
4
1200
1000
CISS
V
GS
=10V
V
GS
=20V
800
600
3
2
1
0
COSS
400
200
0
CRSS
1
10
0.1
2
4
8
12
0
6
10
Drain-Source Voltage,VDS(V)
Drain Current,
ID(A)
Body Diode Forward Voltage Variation
With Source Current and
T
e
mperature
Gate Charge Characteristics
12
10
10
8
VDS=300V
VDS=480V
150
℃
25
℃
6
4
1
VDS=120V
2
0
0.1
10
15
20
0
5
25
0.8
1.0
0.6
0.4
0.2
T
o
tal Gate Charge ,Qg(nC)
Source-Drain Voltage,V
SD
(V)
Transient Thermal Response Curve
10
0
-1
10
10
-2
10
-4
10
-3
1
0
0
10
1
10
-2
10
-1
10
-5
WildGoose
S
e
miconductor Rev
. A1.0, 2015
4
WGF
4
N65
SE
650V N-Channel MOSFET
Gate Charge
T
e
st Circuit & Waveform
R
D
V
DD
V
GS
90%
V
GS
R
G
10%
V
DD
V
GS
10V
D.U.
T
.
tR
tF
to(OFF)
to(ON)
Switching
T
e
st Circuit
Switching Waveforms
Same Type
as D.U.
T
.
K
Ω
50
VGS
12V
Q
G
µF
µ
F
0.2
0.3
V
DS
10V
Q
GS
Q
GS
V
GS
DUT
3mA
Gate Charge
T
e
st Circuit
Gate Charge Waveform
L
BV
DSS
I
AS
V
DS
R
D
V
DD
10V
V
DS(t)
V
DD
D.U.
T
.
tp
tp
Time
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching
T
e
st Circuit
WildGoose
S
e
miconductor Rev
. A1.0, 2015
5
WGF
4
N65
SE
650V N-Channel MOSFET
Peak Diode Recovery dv/dt
T
e
st Circuit & Waveform
D.U.T
+
V
DS
_
+
_
L
R
G
Driver
V
DD
*dv/dt contr
ed by R
G
Same Type
as D.U.T
*I
SD
contro
ulse period
*D.U.
T
.
-Device Under
T
e
st
V
GS
Peak Diode Recovery
T
e
st Circuit
Period
P
.
W.
Period
V
GS
D=
(Driver)
P
.
W.
V
GS
=10V
I
FM
,Body Diode Forward Current
I
SD
(D.U.
T
.
)
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
(D.U.
T
.
)
V
DD
Body Diode
Peak Diode Recovery dv/dt Waveforms
Forward Voltage Drop
WildGoose
S
e
miconductor Rev
. A1.0, 2015
6
WGF
4
N65
SE
650V N-Channel MOSFET
Package Dimension
TO-220F
Unit: mm
WildGoose
S
e
miconductor Rev
. A1.0, 2015
7
