Wild-Goose-WGF4N70SE
| Part # | Wild-Goose-WGF4N70SE |
Download  | Wild-Goose-WGF4N70SE |
WGF4N
70
SE
7
00V N-Channel MOSFET
TO-220F
WGF4N
70
SE
Features:
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge :Qg=1
5
nC (Typ.).
□
BVDSS=
7
00
V
,
I
D
=
4
A
1.Gate (G)
2.Drain (D)
3.Source (S)
□
R
DS
(on) :
3.3
Ω
(Max) @V
G
=10V
□
100% Avalanche
T
e
sted
Absolute Maximum Ratings
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Value
7
00
4.0
Unit
V
DSS
Drain-Source Voltage
Drain Current
V
T
j
=25
℃
I
D
A
T
j
=100
℃
2.
3
V
GS(TH)
E
AS
Gate Threshold Voltage
±30
300
V
Single Pulse Avalanche Energy (note1)
mJ
I
AR
P
D
T
j
Avalanche Current (note2)
Power Dissipation (Tj=25
℃
)
Jun
n
T
e
mperature(Max)
Storage
T
e
mperature
4
30
A
W
℃
℃
150
T
stg
-55~+150
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
TL
300
℃
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
4.16
62.5
Unit
℃
/W
℃
/W
R
θ
JC
R
θ
JA
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
–
–
WildGoose Semiconductor
Rev. A1.0, 2015
1
WGF4N
70
SE
7
00V N-Channel MOSFET
Electrical Characteristics
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250
μ
A
，
V
GS
=0
7
00
–
0.6
–
–
–
V
Breakdown Voltage
T
e
mperature
Coefficient
I
D
=250
μ
A ,Reference
to 25
℃
△
BVDSS/
△
TJ
V/
℃
–
–
1
V
DS
=
7
00V, V
GS
=0V
V
DS
=
56
0V, Tj=125
℃
V
GS
=+30V, V
DS
=0V
I
DSS
Zero Gate Voltage Drain Current
μ
A
10
100
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
I
GSSF
I
GSSR
–
–
–
–
nA
V
GS
=-30V, V
DS
=0V
-100
On Characteristics
V
GS(TH)
Date Threshold Voltage
R
DS(ON)
I
D
=250
μ
A,V
DS
=V
GS
I
D
=
2.0
A,V
GS
=10V
2
–
V
4
Static Drain-Source
On-Resistance
–
ꢀ
3.0
3.3
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
–
–
–
4
40
65
5
6
0
8
5
V
DS
=25V
，
V
GS
=0
，
f=
.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
5.6
7.3
Switching Characteristics
Td(on)
Tr
Turn-On Delay Time
–
–
–
–
–
–
–
13
45
25
35
1
5
3.4
7.
1
35
110
6
0
8
0
2
0
–
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Rise Time
T
o
tal Gate Charg
Gate-Source Charge
Gate-D
in Charge
V
DD
=
3
5
0V
，
I
D
=
4
A
R
G
=25
ꢀ
(Note 3,4)
ns
Td(off)
Tf
Qg
V
DS
=
480
V,V
GS
=10V
，
I
D
=
4
A (Note 3,4)
Qgs
Qgd
nC
–
Drain-Source Diode Characteristics and Maximum Ratings
Is
Max. Diode Forward Current
Max. Pulsed Forward Current
Diode Forward Voltage
–
–
–
–
–
–
–
4
16
1.4
–
A
I
SM
V
SD
Trr
–
I
D
=
4
A
V
–
I
S
=
4
A,V
GS
=0V
diF/dt=100A/
μ
s
(Note3)
Reverse Recovery Time
2
50
nS
Qrr
Reverse Recovery Charge
–
–
μ
C
1
.
5
Notes : 1, L=
0.
5
mH, IAS=
4
A, VDD=50
V
,
R
G=25
ꢀ
, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse
T
e
st : Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
4, Essentially Independent of Operating
T
e
mperature
WildGoose Semiconductor
Rev. A1.0, 2015
2
WGF4N
70
SE
7
00V N-Channel MOSFET
Typical Characteristics
V
G
S
10
1
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10
1
150
o
C
10
0
-55
o
C
Bottom :
4.5 V
o
10
0
25 C
10
-1
※
Notes :
μ
※
Notes :
1. 250
s Pulse Test
1. V
DS
= 40V
℃
2. T
C
= 25
μ
2. 250
s Pulse Test
-1
10
10
-2
10
2
4
6
8
10
0
10
1
-1
V
GS
, Gate-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Charac
eristics
6
5
4
3
2
1
0
10
1
10
10
-1
V
GS
= 10V
℃
150
V
GS
= 20V
※
Notes :
℃
25
1. V
G
S
= 0V
μ
2. 250
s Pulse Test
※
℃
Note : T
J
= 25
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
,
D
rain Current [A]
V
SD
,
S
ource-Drain voltage [V]
Figure 3. On-Resistance Variation
vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
1000
800
600
400
200
0
12
10
8
C
iss
=
C
gs
+
C
gd
(
C
ds
= shorted)
C
oss
= C
ds
+ C
gd
rss
= C
gd
C
V
DS
= 120V
DS
= 300V
V
DS
= 480V
V
C
iss
C
6
oss
※
4
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
2
※
Note : I
D
= 4.5A
0
0
4
8
12
16
-1
10
10
0
10
1
Q
G
, Total Gate Charge [nC]
V
DS
,
D
rain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
WildGoose Semiconductor
Rev. A1.0, 2015
3
WGF4N
70
SE
7
00V N-Channel MOSFET
Typical Characteristics
(Continued)
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※
N
otes :
1. V
G
S
= 0 V
2. I
D
=
2
50
μ
A
0.9
※
Notes :
1. V
GS
= 10 V
2. I
D
2.25 A
0.8
-100
-100
-50
0
50
100
150
0
-50
0
50
100
150
200
T
J
, Junction Temperature [
o
C]
T,
J
unction Temperature [
o
C
]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resis
ce Variation
vs Temp
re
5
Operatio
n
i
n This Area
is Limited by R
D
S(on)
10
1
100
µ
s
4
3
2
1
0
1
m
s
10 ms
100 ms
10
0
DC
-1
10
※
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
-2
10
10
0
10
1
10
2
10
3
25
50
75
100
125
150
℃
T
C
, Case Temperature [
]
V
DS
,
D
rain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9-1. Maximum Safe
perating Area
1 0
0
D = 0
.
5
0
.
2
0
.
1
※
N o
t
e s
1 .
Z
θ
J
C
(
t)
2 .
D u
t
y
F a c to r,
D = t
1
/
t
2
3 .
T
J M
T
C
P
D
Z
θ
J
C
(
t)
:
1 0
–
1
℃
/W M
a x .
=
1
.
2 5
0
.
0 5
–
=
*
M
0
.
0 2
0
.
0 1
P
DM
s in g le
p u ls e
t
1
1 0
–
2
t
2
1 0
–
5
1 0
–
4
1 0
–
3
1 0
–
2
1 0
–
1
1 0
0
1 0
1
t
1
, S
q u a
r
e
W a
v e
P u ls e
D u ra tio n
[s e c ]
Figure 11-1. Transient Thermal Response Curve
WildGoose Semiconductor
Rev. A1.0, 2015
4
WGF4N
70
SE
7
00V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
V
GS
Same Type
50K
Ω
as DUT
Q
g
12V
200nF
10V
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
10V
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching Test Circuit & Waveforms
BV
DSS
——————–
BV
DSS
– V
DD
L
1
2
2
—-
E
AS
=
L I
AS
V
DS
I
D
BV
DSS
I
AS
R
G
V
DD
I
D
(t)
V
DD
V
DS
(t)
DUT
10V
t
p
t
p
Time
WildGoose Semiconductor
Rev. A1.0, 2015
5
WGF4N
70
SE
7
00V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
control
ed by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
WildGoose Semiconductor
Rev. A1.0, 2015
6
WGF4N
70
SE
7
00V N-Channel MOSFET
Package Dimension
TO-220F
Unit: mm
Symbol
Min
9.96
Max
Symbol
Min
Max
A
10.36
D
D1
2.54
A1
A2
A3
7.00
1.15
0.70
0.28
2.34
1.35
0.90
0.48
2.74
3.08
9.25
3.28
9.65
16.10
4.90
6.80
3.40
D2
D3
B1
B2
B3
C
15.70
4.50
6.20
3.20
15.20
9.75
E
E1
0.70
1.0×45°
E2
E3
0.36
2.55
0.65
2.95
C1
C2
16.00
10.15
E4
a(度）
30°
WildGoose Semiconductor
Rev. A1.0, 2015
7
