Wild-Goose-WGF4N80S
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WGF4N80S
8
00V N-Channel
COOL
MOSFET
TO-220F
WGF4N80S
Features:
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge :Qg=
6.5
nC (Typ.).
□
BVDSS=8
0
0
V
,
I
D
=
4
A
1.Gate (G)
2.Drain (D)
3.Source (S)
□
R
DS
(on) :
2.2
Ω
(Max) @V
=10V
G
□
100% Avalanche
T
e
sted
Absolute Maximum Ratings
Value
Symbol
Parameter
Drain-Source Voltage
Drain Current
–
Continuous (TC = 25℃)
–
Continuous (TC = 100℃
Unit
V
DSS
800
V
4
2.5
I
D
A
I
DM
Drain Current – Pulsed
(Note 1)
16
A
V
V
GSS
E
AS
Gate-Source voltage
±
30
230
Single Pulsed Avalanche Energy
ote 2)
(Note 1)
(Note 1)
(Note 3)
mJ
I
AR
Avalanche Current
1
A
E
AR
Repetitive Avalanche Energy
Peak Diode Rec
y dv/dt
0.2
5.0
mJ
dv/dt
V/ns
V/ns
W
dVds/dt
P
D
Drain Source voltage slope (Vds=640V)
Powe
Dissipation (TC = 25℃)
50
35
T
J
, T
STG
Operating and Storage Temperature Range
150,-55 to +150
300
℃
Maximum Lead Temperature for Soldering
Purpose,
1/8” from Case for 5 Seconds
T
L
℃
* Drain current limited by maximum junction temperature. Maximum duty cycle D=0.75.
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
Unit
℃/W
℃/W
℃/W
Value
3.57
R
θ
JC
R
θ
CS
R
θ
JA
0.5
62.5
WildGoose Semiconductor
Rev. 1.0
S
, 2015
1
WGF4N80S
8
00V N-Channel
COOL
MOSFET
Symbol
Parameter
Conditions
Min Typ
Max
Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0
V
,
I
D
= 250µA, T
J
=
800
–
–
–
–
V
V
25
℃
V
GS
= 0
V
,
I
D
= 250µA, T
J
=
850
25
℃
Δ
BV
DSS
/
Δ
T
J
Breakdown Voltage
T
e
mperature
I
D
= 250µA, Referenced to
Coefficient
Zero Gate Voltage Drain Current
V
DS
= 800
V
,
V
GS
= 0V
0.9
–
V/
℃
25
℃
I
DSS
25
–
µA
µA
–
-T
J
= 25
℃
Gate-Body Leakage Current,
V
GS
= 20V
I
GSSF
–
–
–
–
100
nA
nA
Forward
Gate-Body Leakage Current,
= 20V
I
GSSR
V
GS
00
Reverse
On Characteristics
µA
V
GSS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-Source On-
Resistance
V
DS
= V
GS
, I
D
=
250
V
2.0
4.0
2.8
2.2
V
GS
= 10
V
,
I
D
= 2A
g
FS
Rg
Forward Transconductance
V
DS
= 40
V
,
I
D
= 4A
f=1 MHz, open drain
–
–
4
–
–
S
Gate resistance
1.5
Ω
Dynamic Characteristics
V
DS
= 25
V
,
V
GS
= 0
V
, f =
100kHz
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–
–
86.5
82
7.5
–
–
–
pF
pF
pF
Switching Characteristics
V
DD
400
V
,
I
D
=4A, R
G
=
10Ω
(Note 4)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
–
–
–
–
–
–
18
16
45
14
25
4
–
–
–
–
ns
ns
ns
ns
nc
nc
nc
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 640
V
,
I
D
= 4A, V
GS
=
10V
(Note 4)
–
11.5
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
Maximum Conti
us Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
–
–
–
–
4
16
A
A
Drain-Source Diode Forward
V
GS
= 0
V
,
I
S
= 4A
Volta
–
–
V
SD
V
1.5
V
GS
= 0
V
,
I
S
= 4A,
dI
F
/dt
=100A/µs
274
1150
t
rr
Q
rr
Revers
Recovery Time
Reverse Recovery Charge
–
–
–
–
ns
nc
NOTES:
1.Repetitive rating; pulse width limited by maximum junction temperature
2.L
=
1
0mH, I
D
=6.8A, Start T
J
=25
℃
3.I
SD
=4A,di/dt
≤
100A/us,V
DD
≤
BV
DS,
Start T
J
=25
℃
WildGoose Semiconductor
Rev. 1.0
S
, 2015
2
WGF4N80S
8
00V N-Channel
COOL
MOSFET
Typical Characteristics
Characteristics Curve
：
1 0 0
40
30
20
10
0
1 0
1
100us
1ms
OPER
A
T
ION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
T
J
=MAX R
A
TED
10
m
s
0 .1
T
C
=25
℃
Single Pulse
DC
0 .0 1
0
25
75
100
125
150
1
1 0
1 0 0 0
1 0 0
TC , Case Temperature , C
V d s
, D
r
a in -to -S o u rc e
V o lta g e
, V
o lts
Figure
1 Maximum
Forward Bias Safe Operating Area
Figure
8
2
Maximum Power Dissipation vs Case Temperature
6
5
4
3
2
1
0
250us Pluse Test
Tc = 25
℃
V
GS
=10V
6
4
2
V
GS
=6V
V
GS
=4.5V
V
GS
=5V
V
GS
=4V
0
0
0
25
75
TC , Case T
erature , C
3 Maximum
Continuous
ain Current vs Case Temperature
0
125
150
50
5
10
Vds , Drain-to-Source Voltage , Volts
Typical Output Characteristics
15
20
25
Figure
Figure
4
Fi ure
5 Maximum
Effective Thermal Im
edance , Junction to Case
WildGoose Semiconductor
Rev. 1.0
S
, 2015
3
WGF4N80S
8
00V N-Channel
COOL
MOSFET
Typical Characteristics
(Continued)
8
7
6
5
4
3
2
1
0
9
250us Pulse Test
V
DS
=20V
7.5
6
4.5
+150
℃
+25
℃
+25
℃
3
+150
℃
1.5
0
2
4
6
8
10
0
0.2
7
0.4
0.6
0.8
1
1.2
Vgs , Gate to Source Voltage , Volts
Vsd , Source – Drain Voltage , Volts
Figure
Typical Body Diode Transfer Characteristics
Figure
6
Typical Transfer Characteristics
3.5
2.5
2.25
2
PULSE DUR
A
T
ION
= 10
μ
s
DUTY CYCLE=
0.5%MAX
VGS=10V ID=2A
PULSE DUR
A
T
ION
= 10
μ
s
DUTY CYCLE=
0.5%MAX
Tc =25
℃
3.1
2.7
2.3
1.9
V
GS
=10V
1.75
1.5
1.25
1
0.75
0.5
0
1
2
3
4
-50
0
50
Tj, Junction temperature , C
100
150
Id , Drain Current , Amps
Figure
9
Typical Drian to Source on Resistance
vs Junction Temperature
Figure
8
Typical Drain to Source ON Resistance
vs Drain Current
WildGoose Semiconductor
Rev. 1.0
S
, 2015
4
WGF4N80S
8
00V N-Channel
COOL
MOSFET
Typical Characteristics
(Continued)
1.15
1.05
0.95
0.85
0.75
1.15
1.1
1.05
1
0.95
VGS=0V
ID=250
μ
A
0.9
0.85
0.8
VGS=0V
ID=250
μ
A
0.75
0.7
0.65
-55 -30
-5
20
45
70
95 120
145 170
-75 -50 -25
0
25 50 75
100 125 150 175
Tj, Junction temperature , C
Tj, Junction temperature , C
Figure 11 Typical
Breakdown
V
o
ltage vs Junction Temperature
Figure 10 Typical
Theshold
V
o
ltage vs Junction Temperature
12
VDS=640V
VDS=400V
VDS=240V
10
8
6
4
V
GS
=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
2
I
D
=4A
0
0
5
10
15
20
25
Qg , Total Gate Charge , nC
Figure 13 Typical
Gate Charge vs Gate to Source
V
o
ltage
Figure 12 Typical
Capacitance vs Drain to Source
V
o
ltage
WildGoose Semiconductor
Rev. 1.0
S
, 2015
5
WGF4N80S
8
00V N-Channel
COOL
MOSFET
T
e
st Circuit and Waveform
WildGoose Semiconductor
Rev. 1.0
S
, 2015
6
WGF4N80S
8
00V N-Channel
COOL
MOSFET
Test circuit and waveform for diode characteristics
WildGoose Semiconductor
Rev. 1.0
S
, 2015
7
WGF4N80S
8
00V N-Channel
COOL
MOSFET
Package Dimension
TO-220F
Unit: mm
WildGoose Semiconductor
Rev. 1.0
S
, 2015
8
