Wild-Goose-WGF60R140L
| Part # | Wild-Goose-WGF60R140L |
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WGF60R140L
600V N-Channel MOSFET
TO-220F
WGF60R140L
Features:
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge :Qg=4
9
n
C(Typ.).
D(2)
□
V
DSS
=600 V,I
D
=2
4
A
1.Gate
(G)
(D)
(S)
□
R
DS
(on) : 0.16
Ω
(Max) @V
G
=10V
2.Drain
3.Source
G(1)
□
100% Avalanche Tested
S(3)
Absolute Maximum Ratings
(Ta=25
℃
un
less other
w
ise
noted
)
Symbol
V
DSS
Parameter
Value
600
24
Unit
Drain-Sourc
e Vo
ltage
Drain Current
V
T
j
=25
℃
I
D
A
T
j
=100
℃
15
V
GSS
Gate
-Sourc
e
Voltage
±30
V
mJ
A
E
Single Pulse Avalanche Energy (note
1)
1062
AS
I
DM
P
D
Pulsed Drain Current (note2
)
Power Dissipation (Tj=
25
℃
)
24
47
W
℃
e
mperatur
e(Max)
T
j
Junction T
150
T
stg
St
orage
Temperatur
e
-55~+
150
℃
MOSFET dv/dt ruggeness,VDS=0V…480V
V/nS
50
dv/dt
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
2.66
Unit
℃
/W
℃
/W
R
θ
JC
R
θ
JA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
–
–
62.5
WildGoose
S
emiconductor Rev
. A1.0
,
2
021
1
WGF60R140L
600V N-Channel MOSFET
Electrical Characteristics
(Ta=25
℃
unless otherwise noted)
Parameter Test
Condition
Symbol
Min.
Typ.
Max.
Unit
Off Chara cteristics
BV
DSS
V
Drain-Source Breakdown Volt
age
I
D
=250
μ
A
，
V
GS
=0
600
–
–
–
Breakdown Vo
lt
age Temperatur
e
I
D
=250
μ
A ,Reference
to 25
℃
△
BVDSS/
△
TJ
0.59
V/
℃
–
Coefficient
V
DS
=600V, V
GS
=0V
V
DS
=480V, Tj=125
℃
V
GS
=+30V, V
DS
=0V
–
–
10
I
DSS
Zero Gate Vo
lt
age Drain
Current
μ
A
100
Gate-body leakage Cur
rent,
Forward
Gate-body leakage Cur
rent,
Rev
erse
I
GSSF
I
GSSR
–
–
–
–
100
nA
V
GS
=-30V, V
DS
=0V
-100
On Characteristics
V
GS(TH)
Date Threshold Voltage
I
D
=250
μ
A,V
DS
=V
GS
2
–
–
4
V
Static Drain-Source
On-Resist
ance
R
DS(ON)
I
D
=1
2
A
,V
GS
=10V
Ω
0.14
0.16
Dynamic Characteristic
s
Input
Ciss
Coss
Crss
Capacitance
–
1480
84
–
–
–
V
DS
=100V
，
V
GS
=
0
，
f=1.0MHz
pF
Output Capacitance
–
Reverse Transfer
Capacit
ance
4.8
Sw itching Characteristics
21
74
213
65
49
12
25
Td(on)
Tr
Turn-On
Delay Time
–
–
–
–
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off
Rise Time
T
ot
al Gate C
harge
Gate-Source Charge
Gate-Dr
ain Charge
V
DD
=
300
V
，
I
D
=
24
A
R
G
=25
Ω
(Not
e 3,4)
n
S
Td(of f)
Tf
–
–
–
–
Qg
–
–
–
–
–
–
V =
0V,V =10V
，
48
DS
GS
nC
Qgs
Qgd
I
D
=
2
0
A (Note3,4)
Drain-Source Diode Characteristics and Maximum Ratings
–
–
–
–
Is
Max. Diode
Forwar
d Current
Max. Pulsed Forward Current
Diode Forward V
olt
age
–
–
–
24
96
1.
4
–
A
I
SM
V
SD
–
I
D
=2
4
A
–
V
I
S
=
2
4
A
,
V
GS
=0V
diF/dt=100A/
μ
s
(Note3
)
Trr
Reverse
Recovery
Time
nS
442
7.0
–
Qrr
Revers
e Recover
y Charge
–
μ
C
Note
1) Calculated
continuous current based on maximum allowable junction temperature.
2) Repetitive
rating; pulse width limited by max. junction temperature.
3) Pd
is based on max. junction temperature, using junction-case thermal resistance.
4) The
value of R
θJA
is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper,
in a still air environment with T
a
=25 °C.
5) V
DD
=100 V, V
GS
=10 V, L=79.9 mH, starting T
j
=25 °C.
WildGoose
S
emiconductor Rev
. A1.0
,
2
021
2
WGF60R140L
600V N-Channel MOSFET
典型特性曲线
图
1.
输出特性
图
2.
传输特性
100
10
1
60
V
GS
=4V
V
GS
=5V
V
GS
=6V
V
GS
=7V
V
GS
=9V
V
GS
=10V
V
GS
=11V
-55°C
25°C
50
40
30
20
10
0
150°C
注：
注：
1.250µS
脉冲测试
2.T
C
=25°C
1.250µS
脉冲测试
2.V
DS
=30V
0.1
0
5
10
15
20
0
2
4
6
8
10
漏源电压 –
V
DS
(V)
栅源电压 –
V
GS
(V)
图
3.
导通电阻
vs.
漏极电流
图
4.
体二极管正向压降
vs.
源极电流、温度
100
500
400
300
200
100
0
-55°C
25°C
V
GS
=10V
V
GS
=20V
150°C
10
1
注：
1.250µS
脉冲测试
2.V
GS
=0V
=25°C
40 50
0.1
0.8
1.0
1.2
0
0.2
0.4
0.6
0
10
20
源漏电压 –
V
SD
(V)
图
6.
电荷量特性
漏极电流 –
I
D
(A)
5.
电容特性
10000
1000
100
10
12
Ci
ss
C
oss
Cr
ss
V
DS
=480V
V
DS
=300V
V
DS
=120V
10
8
6
4
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
注：
1. V
GS
=0V
2. f=1MHz
2
0
注：
I
D
=24A
1
0.1
1
10
100
0
10
20
30
40
50
60
漏源电压 –
V
DS
(V)
总栅极电荷 –
Q
g
(nC)
WildGoose
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emiconductor Rev
. A1.0
,
2
021
3
WGF60R140L
600V N-Channel MOSFET
典型特性曲线（续）
图
7.
击穿电压
vs.
温度特性
图
8.
导通电阻
vs.
温度特性
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
注：
1. V
GS
=0V
2. I
D
=250µA
注：
1. V
GS
=10V
2. I
D
=12.0A
-100 -50
0
100 150 200
-100 -50
0
50
100 150 200
结温 –
T
J
(°C)
结温 –
T
J
(°C)
图
9-1.
最大安全工作区域
10
3
10
2
10
1
10
0
10
-1
10
-2
此区域工作受限于
R
DS(ON)
100µs
1ms
10ms
DC
注
5°C
10
0
10
1
10
2
10
3
漏源电压
– V
DS
(V)
WildGoose
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emiconductor Rev
. A1.0
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2
021
4
WGF60R140L
600V N-Channel MOSFET
典型测试电路
栅极电荷量测试电路及波形图
与待测器件
V
GS
Qg
参数一致
10V
50K
Ω
V
DS
200nF
12V
300nF
Qgs
Qgd
V
GS
待测器件
3mA
电荷量
开关时间测试电路及波形图
R
L
V
DS
V
DS
90%
V
GS
V
DD
R
G
待测器件
10%
V
GS
10V
td(on)
tr
td(off)
t
f
t
on
t
off
E
AS
测试电路及波形图
BV
DSS
1
2
2
E
AS
=
LI
AS
L
–
BV
DSS
V
DD
V
DS
BV
DSS
I
AS
I
D
R
G
待测器件
I
D(t)
V
DD
10V
V
DS(t)
V
DD
tp
Time
tp
WildGoose
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emiconductor Rev
. A1.0
,
2
021
5
WGF60R140L
600V N-Channel MOSFET
Package Dimension
TO-220F
Unit: mm
WildGoose
S
emiconductor Rev
. A1.0
,
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021
6
