Wild-Goose-WGF65R600
| Part # | Wild-Goose-WGF65R600 |
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WGF65R600
600mΩ, 650V, Super Junction N-Channel Power MOSFET
TO-220F
Features:
□
□
□
Ultra Low R
DS(ON)
= 600mΩ @ V
= 10V.
GS
Ultra Low Gate Charge, Qg=18.4nC typ.
Fast switching capability
□
□
Robust design with better EAS performance
TM
EMI Improved Design
(
SnowMOS
Gen.2)
D(2)
□
□
VDSS=650 V,I
7.3A
D=
100% Avalanche Tested
Application
1.Gate
(G)
(D)
(S)
2.Drain
3.Source
□
□
TV Power
G(1)
High Performance Charger / Adapter
LED Lighting Power
□
S(3)
Absolute Maximum Ratings
650
±30
7.3
V
V
Drain-Source Voltage (Note2)
Gate-Source Voltage
V
V
DSS
GSS
T =25ºC
C
I
D
8.4
A
Continuous Drain Current
T =25ºC
(Note 3, D=75%)
C
T =125º
C
3.3
24.0
105
A
mJ
mJ
A
Pulsed Drain Current (Note 4)
I
DM
Avalanche Energy, Single Pulse (Note
Avalanche Energy, Repetitive (Not
Avalanche Current, Repetitive (Note 4)
Continuous Diode Forward Current
Diode Pulse Current
EAS
0.15
1.3
E
AR
I
AR
7.3
A
I
S
24.0
150
A
I
S.PULSE
ºC
ºC
ºC
Operating Junction Temperature
Storage Temperature
T
J
-55 to 150
260
T
STG
Lead Tempera
ure (Soldering, 10 sec)
T
LEAD
Note:
1. Absolute
maximum ratings are those values beyond which the device could be permanently damaged. Absolute
maximum ratings are stress ratings only and functional device operation is not implied.
2. For
voltage spike during switching.
3. Limited by TJ_MAX, Maximum duty cycle D=0.75
4. Repetitive
Rating: Pulse width limited by maximum junction temperature
5. IAS = 1.3A, VDD = 60V, RG = 25Ω, Starting TJ = 25°C
Rev
. A1.0,
2015
WildGoose
S
emiconductor
1
1
WGF65R600
600mΩ, 650V, Super Junction N-Channel Power MOSFET
Thermal characteristics
Parameter
Symbol
Min
Typ
Max
Unit
ºC
/W
ºC
/W
TO-252
TO-252
2.13
60
Thermal resistance, Junction-to-Case
R
thJC
Thermal resistance, Junction-to-Ambient
R
thJA
Electrical Characteristics
TJ = 25℃, unless otherwise specified.
Parameter Symbol
Statistic Characteristics
Test Conditions
Min
Typ
Max
Unit
BV
DSS
V
V
V
V
V
V
=0V, I
=250uA
650
V
Drain-Source Breakdown Voltage
Zero Gate
Voltage Drain Current
GS
D
I
=650V, V
=0V
DS GS
1
100
–
1
00
4.5
uA
DSS
Forward
Reverse
I
=30V, V
=0V
GS DS
GSSF
nA
Gate-Body Leakage Current
-30V, V
=0V
GS= DS
I
GSSR
=V ,
I =250uA
2.7
3.6
510
8.9
V
mΩ
Ω
Gate Threshold Voltage
Static Drain-Source On-Resistance
Gate Resistance
VGS(TH)
RDS(ON)
DS GS
D
600
=10V, ID=4.0A
GS
R
G
f=1MHz, Open Drain
Dynamic Characteristics
Input Capacitance
C
356
31.8
18.7
ISS
V
=50V, V
=0V,
DS GS
C
OSS
Output Capacitance
pF
pF
f=1MHz
C
RSS
Reverse Transfer Capacitance
capacitance, energy
Effective output
16
72
CO(er)
CO(tr)
NOTE6
related
V
V
=0V,
GS
=0 …480V
DS
Effective
output capacitance,
time
NOTE7
related
10
12
36
14
Turn-on Delay Time
Rise Time
t
d(on)
t
r
V
=400V, ID=4.0A
DD
ns
Turn-off Delay Time
Fall Time
t
d(off)
R =10Ω,
V =10V
G
GS
t
f
Gate Charge Characteris
ics
Gate to Source Charge
Gate to Drain Charge
Gate Charge Total
4.2
9.1
Q
gs
nC
V
Q
gd
V
V
=480V, ID=4.0A
DD
18.4
5.9
Q
g
=0 to 10V
GS
Gate Plateau Voltage
Reverse Diode Characteristics
Vplateau
V
=0V, I
4.0A
0.84
206
1.63
15.8
1.1
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VSD
GS SD=
V
ns
uC
A
t
rr
V =400V,
I =4.0A
R
F
Reverse Recovery Charge
Q
rr
dI /dt=100A/us
F
Peak Reverse Recovery Current
Irrm
Note:
6.
is a fixed capacitance that gives the same stored energy as C
is a fixed capacitance that gives the same charging time as C
while V
is rising from 0 to
480V
CO(er)
OSS
DS
7. C
while V
is rising from 0 to 480 V
O (tr)
OSS
DS
Rev
. A1.0,
2015
WildGoose
S
emiconductor
2
1
WGF65R600
600mΩ, 650V, Super Junction N-Channel Power MOSFET
Typical Performance Characteristics
Figure 3: Power Dissipation
Figure 4: Max. Transient Thermal Impedance
P =
f(T
c
)
Z(
thJC
) = f(t
p
); parameter: D = t
p
/T
Figure 6: Safe Operating Area
tot
Figure 5: Safe Operating Area
I =
D
T = 25ºC
V
GS
>7V; parameter t
p
I =
D
T = 80ºC
V
f(V
DS
); ;
GS
>7V; parameter t
p
f(V
DS
);
;
c
c
Rev
. A1.0,
2015
WildGoose
S
emiconductor
3
1
WGF65R600
600mΩ, 650V, Super Junction N-Channel Power MOSFET
Figure 7: Typ. Output Characteristics
Figure 8: Typ. Output Characteristics
ID = f(V
); Tj= 25ºC; parameter: V
DS GS
ID = f(V
); Tj= 125ºC; parameter: V
DS
GS
Figure 9: Typ. Drain-Source On-State Resistance
Figure 10:
Typ. Drain-Source On-State Resistance
=f(I );
Tj=125ºC; parameter: V
=f(T ); ID=4.0A; V
=10V
RDS(ON) GS
RDS(ON)
D
GS
j
Rev
. A1.0,
2015
WildGoose
S
emiconductor
4
1
WGF65R600
600mΩ, 650V, Super Junction N-Channel Power MOSFET
Figure 11:
Typ. Transfer Characteristics
Figure 12:
Typ. Gate Charge
V
f(Q
), ID=4.0A pulsed
gate
ID = f(V
); V
GS DS
= 20V
S=
Figure 13:
Drain-Source Breakdown Voltage
Figure 14: Forward Characteristics ofReverse Diode
=f(T ); I
=1mA
VBR(DSS)
j
D
I =f(V
); parameter: Tj
F SD
Rev
. A1.0,
2015
WildGoose
S
emiconductor
5
1
WGF65R600
600mΩ, 650V, Super Junction N-Channel Power MOSFET
Figure 11: Typ. Transfer Characteristics
Figure 12: Typ. Gate Charge
I
D
= f(V
GS
); V
DS
= 20V
V
GS
= f(Q
gate
), I
D
=4.0A pulsed
Figure 13: Drain-Source Breakdown Voltage
gure 14: Forward Characteristics of Reverse Diode
V
BR(DSS)
=f(T
j
); I
D
=1mA
I
F
=f(V
SD
); parameter: T
j
Rev
. A1.0,
2015
WildGoose
S
emiconductor
6
1
WGF65R600
600mΩ, 650V, Super Junction N-Channel Power MOSFET
Figure 15: Avalanche Energy
Figure 16: Typ. Capacitances
E
AS
=f(T
j
); I
D
=1.3A; V
DD
=60V
Figure 17: C
OSS
Stored Energy
C=f(V
DS
); V
GS
=0; f=1MHz
Figure 18: Drain current
E
OSS
=f(V
DS
)
I
D
=f(T
C
)
Rev
. A1.0,
2015
WildGoose
S
emiconductor
7
1
WGF65R600
600mΩ, 650V, Super Junction N-Channel Power MOSFET
Test Circuits
1. Gate Charge Test Circuit & Waveform
2. Switch Time Test Circuit
3. Unclaimed Inductive Switching Test Circuit & Waveforms
4. Test Circuit and Waveform for Diode Characteristics
Rev
. A1.0,
2015
WildGoose
S
emiconductor
8
1
WGF65R600
600mΩ, 650V, Super Junction N-Channel Power MOSFET
Package Dimension
TO-220F
10.16±0.20
Ø3.18±0.10
4.70±0.20
2.54±0.20
1.38±0.10
0.8±0.10
20
2.76±0.
0.50±0.10
2.54type
2.54type
9.40±0.20
1.
Ra0.8
Ra0.2
0.1
0.1
2.
3.
4.
R0.2
0.15
Rev
. A1.0,
2015
WildGoose
S
emiconductor
9
1
