Wild-Goose-WGF6N90S
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WGF6N90S
900V N-Channel MOSFET
TO-220F
WGF6N90S
Features:
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge :Qg=31.1nC(Typ.).
□
BVDSS=900
V
,
I
D
=6A
1.Gate (G)
2.Drain (D)
3.Source (S)
□
R
DS
(on) :
2
Ω
(Typ.) @V
G
=10V
□
100% Avalanche
T
e
sted
Absolute Maximum Ratings
(
T
a
=25
℃
unless otherwise note
Symbol
Parameter
Value
900
6.0
Unit
V
DSS
Drain-Source Voltage
Drain Current
V
T
j
=25
℃
I
D
A
T
j
=100
℃
3.7
V
GS(TH)
E
AS
Gate Threshold Volta
±30
V
Single Pulse Ava
anche Energy
(Tc= 25
℃
)
mJ
466
I
DM
P
D
T
j
Pulsed Drain
rent
24
33
A
Power Di
ation (Tc= 25
℃
)
Junction
T
e
mperature(Max)
orage
T
e
mperature
W
℃
℃
150
T
stg
-55~+150
ximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
TL
300
℃
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
℃
/W
℃
/W
3.8
R
θ
JC
R
θ
JA
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
–
–
62.5
WildGoose Semiconductor
Rev. A1.0, 2018
1
WGF6N90S
900V N-Channel MOSFET
Electrical Characteristics
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250
μ
A
，
V
GS
=0
900
–
0.96
–
–
–
V
Breakdown Voltage
T
e
mperature
Coefficient
I
D
=250
μ
A ,Reference
to 25
℃
△
BVDSS/
△
TJ
V/
℃
–
–
V
DS
=900V, V
GS
=0V
10
I
DSS
Zero Gate Voltage Drain Current
μ
A
V
DS
=720V, Tj=125
℃
100
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
I
GSSF
I
GSSR
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
–
–
–
100
nA
-100
On Characteristics
V
GS(TH)
Date Threshold Voltage
R
DS(ON)
I
D
=250
μ
A,V
DS
=V
GS
2
–
–
4
V
Static Drain-Source
On-Resistance
2.0
2.3
I
D
=3A,V
GS
=10V
ꢀ
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
–
–
–
1435
100
5.2
–
–
V
DS
=25V
，
V
GS
=0
，
f=1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
–
Switching Characteristics
Td(on)
Tr
Turn-On Delay Time
–
–
–
–
–
–
–
17.6
17.2
43.6
20.2
31.1
13.6
6.3
–
–
–
–
–
Turn-On Rise Time
Turn-Off Delay Ti
Turn-Off R
se Time
T
o
tal Ga
e Charge
Gate-S
e Charge
Gate-Drain Charge
V
DD
=450V
，
I
D
=6A
R
G
=10
ꢀ
n
S
Td(off)
Tf
Qg
V
DS
=630V,V
GS
=10V
，
I
D
=6A
Qgs
Qgd
–
–
nC
Drain-Source Diode Characteristics and Maximum Ratings
Is
Max. Diode Forward Current
Max. Pulsed Forward Current
Diode Forward Voltage
–
–
–
–
–
6
24
1.5
–
Tc= 25
℃
Tc= 25
℃
I
D
=3A
I
S
=6A,V
GS
=0V
diF/dt=100A/
μ
s
(Note3)
A
I
SM
V
SD
Trr
–
–
V
Reverse Recovery Time
727
nS
Qrr
Reverse Recovery Charge
–
5.3
–
μ
C
Notes : 1, L=10mH, IAS=9.7A , Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse
T
e
st : Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
WildGoose Semiconductor
Rev. A1.0, 2018
2
WGF6N90S
900V N-Channel MOSFET
Typical Characteristics
Figure 1
Maximum Forward Bias Safe Operating Area
Figure 2
Maximum Power dissipation vs Case Temperature
Figure 3
Maximum Continu
us Dr
n Current vs Case Temperature
Figure
4 Typical
Output Characteristics
Figure
5 Maximum
Effective Thermal Impedance , Junction to Case
WildGoose Semiconductor
Rev. A1.0, 2018
3
WGF6N90S
900V N-Channel MOSFET
Typical Characteristics
(Continued)
Figure
7 Typical
Body Diode Transfer Characteristics
Figure
6
Typical Transfer Characteristics
Figure
8
Typical Drain to Source ON Resistance
vs Drain Current
Figure
9
Typical Drian to Source on Resistance
vs Junction Temperature
WildGoose Semiconductor
Rev. A1.0, 2018
4
WGF6N90S
900V N-Channel MOSFET
Figure 10
Typical Theshold
V
o
ltage vs Junction Temperature
Figure 11
Typical Breakdown
V
o
ltage vs Junction Temperature
Figure 13
Typical Gate Charge vs Gate to Source
V
o
ltage
Figure 12
Typical Capacitance vs Drain to Source
V
o
ltage
WildGoose Semiconductor
Rev. A1.0, 2018
5
WGF6N90S
900V N-Channel MOSFET
T
e
st Circuit and Waveform
Figure 14. Gate Charge Test Circuit
Figure 15. Gate Charge
W
a
veforms
Figure 16. Resistive Switching Test Circuit
Figure 17. Resistive Switching Waveforms
WildGoose Semiconductor
Rev. A1.0, 2018
6
WGF6N90S
900V N-Channel MOSFET
Figure 18. Diode Reverse Recovery Test Circuit
Figure 19. Diode Reverse Recovery Waveform
Figure20.Unclamped Inductive Switching Test Circuit
Figure21.Unclamped Inductive Switching
W
a
veform
WildGoose Semiconductor
Rev. A1.0, 2018
7
WGF6N90S
900V N-Channel MOSFET
Package Dimension
TO-220F
Unit: mm
Size
Size
Size
Max
12.78 13.18
Size
Symbol
Symbol
Symbol
Symbol
Min
Max
Min
Max
0.45
Min
Min
Max
W
9.96
10.36
W4
L
L1
L2
0.25
L3
T
T1
T2
T3
G(Φ)
0.45
3.08
0.60
3.28
W1
W2
W3
2.54 (TYP)
15.67
6.48
3.20
16.07
6.88
3.40
4.50
2.34
2.56
4.90
2.74
2.96
0.70
1.24
0.90
1.47
WildGoose Semiconductor
Rev. A1.0, 2018
8
