Wild-Goose-WGF70R490
| Part # | Wild-Goose-WGF70R490 |
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WGF70R490
700V N-Channel MOSFET
TO-220F
WGF70R490
Features:
□
□
□
□
□
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=8.7nC(Typ.).
V
DSS
=700 V,I
D
=8A
D(2)
1.Gate
(G)
(D)
(S)
□
R
DS
(on) : 0.55
Ω
(Max) @V
G
=10V
2.Drain
3.Source
G(1)
3)
Absolute Maximum Ratings
(Ta=25
℃
un
less other
w
ise
noted
)
Symbol
V
DSS
Parameter
Value
Unit
Drain-Sourc
e Vo
ltage
V
700
8.0
T
j
=25
℃
I
D
Drain Current
A
5.0
±30
140
T
j
=100
℃
V
GSS
Gate
-Sourc
e
Voltage
V
E
Single Pulse Ava an
Energy (note
1)
mJ
AS
I
DM
A
W
Pulsed Drain C
nt (note2
)
Powe Dissipation
(Tj=
25
℃
)
24
26
P
D
T
j
e
peratur
e(Max)
Juncti
150
℃
T
stg
St
orage
Temperatur
e
-55~+
150
℃
MOSFET dv/dt ruggeness,VDS=0V…480V
V/nS
dv/dt
50
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
4.8
Unit
℃
/W
℃
/W
R
θ
JC
R
θ
JA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
–
62.5
–
WildGoose
S
emiconductor Rev
. A1.0
,
2
015
1
WGF70R490
7
00V
N
-Channel
M
OSFET
Electrical Characteristics
(Ta=25
℃
unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Chara cteristics
BV
DSS
Drain-Source Breakdown Volt
age
Breakdown Vo
lt
age Temperatur
e
Coefficient
700
–
–
–
V
I
D
=250
μ
A
，
V
GS
=0
I
D
=250
μ
A ,Reference
to 25
℃
△
BVDSS/
△
TJ
0.67
V/
℃
–
–
–
10
V
DS
=700V, V
GS
=0V
V
DS
=520V, Tj=125
℃
V
GS
=+30V, V
DS
=0V
I
DSS
Zero Gate Vo
lt
age Drain
Current
Gate-body leakage Cur
rent,
μ
A
100
100
I
GSSF
I
GSSR
–
–
–
Forward
Gate-body leakage Cur
rent,
nA
-100
V
GS
=-30V, V
DS
=0V
Rev
erse
On Characteristics
V
GS(TH)
Date Threshold Voltage
Static Drain-Source
2
–
–
4
V
I
D
=250
μ
A,V =V
GS
S
R
DS(ON)
Ω
D
=4.0A,V
GS
=10V
0.49
0.55
On-Resist
ance
Dynamic Characteristic
s
Input
Ciss
Coss
Crss
Capacitance
–
410.8
41.7
3
.
1
–
–
–
V
DS
=25V
，
V
GS
=0
，
f=1.0MHz
pF
Output Capacitance
–
Reverse Transfer
Capacit
ance
Sw itching Characteristics
Td(on)
Tr
Turn-On
Delay Time
–
–
26.4
17.9
56.2
14.0
8.6
V
DD
=
400
V
，
I
D
=
4
A
R
G
=25
Ω
(Not
e 3,4)
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off
Rise Time
T
ot
al Gate C
harge
Gate-Source Ch
ge
Gate-Dr
ain Charge
n
S
Td(of f)
Tf
–
–
Qg
–
–
–
V
DS
=
40
0V,V
GS
=10V
，
I
D
=
5
A (Note3,4)
nC
2.2
Qgs
Qgd
–
3.8
–
Drain-Source Diode Ch
eristics and Maximum Ratings
Is
Max. Diode
Forwar
d Current
Max. Pulsed Forward Current
Diode Forward V
olt
age
–
–
–
–
–
–
8
2
4
1.
3
–
A
I
SM
–
–
–
V
SD
Trr
V
I
D
=8A
I
S
=
4
A,V
GS
=0V
diF/dt=100A/
μ
s
(Note3
)
Reverse
Recovery
Time
nS
214.3
1.7
–
Qrr
Revers
e Recover
y Charge
–
μ
C
Note
1)
Calculated continuous current based on maximum allowable junction temperature.
2)
Repetitive rating; pulse width limited by max. junction temperature.
3)
Pd is based on max. junction temperature, using junction-case thermal resistance.
The value of R
θJA
is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper,
in a still air environment with T
a
=25 °C.
4)
V
DD
=100 V, V
GS
=10 V, L=79.9 mH, starting T
j
=25 °C.
5)
WildGoose
S
emiconductor Rev
. A1.0
,
2
015
2
WGF70R490
7
00V
N
-Channel
M
OSFET
Typical Characteristics
15
100
10
1
V
DS
= 10 V
= 10 V
= 25 ℃
T
j
V
GS
T
j
= 25 ℃
V
GS
= 7 V
= 6.5 V
S
= 6 V
V
GS
10
V
5
V
GS
= 5.5 V
V
GS
= 5 V
V
GS
= 4.5 V
0
0.1
0
3
6
9
12
15
2
4
6
8
10
V
DS
, Drain-source voltage (V)
V
GS
, Gate-source voltage(V)
Figure 1. Typ. output characteristics
Figure 2. T
ransfer characteristics
10
4
10
3
10
2
10
1
10
0
10.0
7.5
5.0
2.5
0.0
f
= 100 kHz
4 A
V
GS
= 0 V
S
= 400 V
C
iss
C
oss
C
rss
1
10
100
0
2
4
6
8
10
V
DS
, Drain-
v tage
(V)
Q
g
, Gate charge(nC)
Figure 3.
apacitances
Figure 4. Typ. gate charge
800
760
720
680
640
600
1.6
1.4
I
=
50 μA
D
I
D
=4 A
GS
= 10 V
V
V
V
1.2
1.0
0.8
0.6
0.4
0.2
-50
0
50
100
150
-50
0
50
100
150
T
j
, Junction temperature (℃)
T
j
, Junction Temperature (℃)
Figure 5. Drain-source breakdown voltage
Figure 6. Drain-source on-state resistance
WildGoose
S
emiconductor Rev
. A1.0
,
2
015
3
WGF70R490
7
00V
N
-Channel
M
OSFET
Typical Characteristics
(Continued)
4.5
4.0
3.5
3.0
2.5
2.0
T
j
= 25 ℃
100
10
1
I
= 250 μA
D
-50
0
50
100
150
0.5
1.0
1.5
2.0
T
j
, Junction Temperature (℃)
V
urce-Drain voltage (V)
Figure 7. Threshold voltage
Figure 8. Forward characteristic of body diode
10
8
6
4
2
0
9
8
7
6
V
V
GS
=5.5
V
GS
=
6 V
V
GS
=5 V
6.5 V
=
0 V
V
GS
V
GS
=1
5
4
3
2
1
0
2
4
6
10
14
0
20
40
60
80
100
120
140
I
D
, D
rent(A)
T
C
, Case Temperature (℃)
Figure 9. Drain-s
urce on-state resistance
Figure 10. Drain current
100
10
10 μs
1
100 μs
1 ms
Limited
R
D
S(ON)
0.1
0.01
10 ms
DC
0.1
1
10
100
1000
V
DS
, Drain-source voltage(V)
Figure 11. Safe operation area T
C
=25 °C
WildGoose
S
emiconductor Rev
. A1.0
,
2
015
4
WGF70R490
7
00V
N
-Channel
M
OSFET
Gate Charge Test Circuit & Waveform
R
D
V
D
D
V
G
S
90%
V
G
S
R
G
10%
V
DD
10V
D.U.T.
V
G
tR
tF
S
to(OFF)
to(ON)
Switching Test Circuit
Switching Waveforms
Same Type
as D.U.T.
K
50 Ω
VGS
12V
Q
G
µF
µF
1.3
1.2
V
D
10V
S
Q
G
V
GS
Q
GS
DUT
S
Gate Ch
e Test Circuit
Gate Charge Waveform
L
BV
DSS
V
DS
I
AS
R
D
V
D
D
10V
V
DS(t)
V
DD
D.U.T.
tp
tp
Unclamped Inductive Switching Waveforms
Time
Unclamped Inductive Switching Test
Circuit
WildGoose
S
emiconductor Rev
. A1.0
,
2
015
5
WGF70R490
7
00V
N
-Channel
M
OSFET
Peak Diode Recovery dv/dt Test Circuit & W
aveform
D.U.T
+
V
DS
_
+
L
_
R
G
Driver
V
DD
*dv/dt contro
by R
G
Same Type
as D.U.T
*I
SD
controlled pulse
period
*D.U.T.-Device Under
Test
V
G
Peak Diode
Recover
Test Circuit
P.W.
Period
V
GS
(Driver)
D=
Period
P.W.
V
GS
=10V
I
FM
,Body Diode Forward Current
I
SD
(D.U.T.)
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Peak Diode Recovery dv/dt
Waveforms
Forward Voltag
e
D
rop
WildGoose
S
emiconductor Rev
. A1.0
,
2
015
6
WGF70R490
7
00V
N
-Channel
M
OSFET
Package Dimension
TO-220F
Unit: mm
WildGoose
S
emiconductor Rev
. A1.0
,
2
015
7
