Wild-Goose-WGF8N80S
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WGF8N80S
8
00V N-Channel MOSFET
TO-220F
WGF8N80S
Features:
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge :Qg=34nC (Typ.).
□
VDSS=
8
00
V
,
I
D
=7A
1.Gate (G)
2.Drain (D)
3.Source (S)
□
R
DS
(on) : 1.8
Ω
(Max) @V
G
=10V
□
100% Avalanche
T
e
sted
Absolute Maximum Ratings
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Value
8
00
8.0
Unit
V
DSS
Drain-Source Voltage
Drain Current
V
T
j
=25
℃
I
D
A
T
j
=100
℃
4.
4
V
GSS
±30
V
E
AS
Single Pulse Avalanche Energy (note1)
mJ
150
I
AR
P
D
T
j
Avalanche Current (note2)
Power Dissipation (Tj=25
℃
)
Jun
n
T
e
mperature(Max)
Storage
T
e
mperature
7.0
48
A
W
℃
℃
150
T
stg
-55~+150
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
TL
300
℃
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
2
.6
Unit
℃
/W
℃
/W
R
θ
JC
R
θ
JA
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
–
–
62.5
WildGoose Semiconductor
Rev. A1.0, 2021
1
WGF8N80S
8
00V N-Channel MOSFET
Electrical Characteristics
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250
μ
A
，
V
GS
=0
8
00
–
0.67
–
–
–
V
Breakdown Voltage
T
e
mperature
Coefficient
I
D
=250
μ
A ,Reference
to 25
℃
△
BVDSS/
△
TJ
V/
℃
–
–
V
DS
=
8
00V, V
GS
=0V
V
DS
=
64
0V, Tj=125
℃
10
I
DSS
Zero Gate Voltage Drain Current
μ
A
100
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
I
GSSF
I
GSSR
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
–
–
–
–
100
nA
100
On Characteristics
V
GS(TH)
Date Threshold Voltage
R
DS(ON)
I
D
=250
μ
A,V
DS
=V
GS
–
V
2
4
Static Drain-Source
On-Resistance
I
D
=3.5A,V
GS
=10V
ꢀ
1.8
1.5
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
–
–
–
–
–
–
1350
1
15
1
2
V
DS
=25V
，
V
GS
=0
，
f=1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Switching Characteristics
–
Td(on)
Tr
Turn-On Delay Time
–
–
–
–
–
–
–
1
5
25
51
31
34
6.0
14
–
–
–
–
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Rise Time
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=
4
00V
，
I
D
=7A
R
G
=12
ꢀ
ns
Td(off)
Tf
Qg
V
DS
=
40
0V,V
GS
=10V
，
I
D
=7A
Qgs
Qgd
–
–
nC
Drain-Source Diode Characteristics and Maximum Ratings
Is
Max. Dio
Forward Current
Max. Pulsed Forward Current
Diode Forward Voltage
–
–
–
–
–
–
8
28
1.5
–
A
I
SM
V
SD
Trr
–
–
–
I
D
=7A
V
I
S
=7A,V
GS
=0V
diF/dt=100A/
μ
s
(Note3)
Reverse Recovery Time
186
nS
Qrr
Reverse Recovery Charge
–
–
μ
C
878
Notes : 1, L=
25.0
mH, IAS=7A, VDD=50
V
,
R
G=25
ꢀ
, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse
T
e
st : Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
4, Essentially Independent of Operating
T
e
mperature
WildGoose Semiconductor
Rev. A1.0, 2021
2
WGF8N80S
8
00V N-Channel MOSFET
Typical Characteristics
WildGoose Semiconductor
Rev. A1.0, 2021
3
WGF8N80S
8
00V N-Channel MOSFET
Typical Characteristics
(Continued)
WildGoose Semiconductor
Rev. A1.0, 2021
4
WGF8N80S
8
00V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
WildGoose Semiconductor
Rev. A1.0, 2021
5
WGF8N80S
8
00V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveform
WildGoose Semiconductor
Rev. A1.0, 2021
6
WGF8N80S
8
00V N-Channel MOSFET
Package Dimension
TO-220F
Unit: mm
Size
Size
Size
Max
12.78 13.18
Size
Symbol
Symbol
Symbol
Symbol
Min
Max
Min
Max
Min
Min
Max
W
9.96
10.36
W4
L
L1
L2
0.25
15.67
6.48
0.45
16.07
6.88
L3
T
T1
T2
T3
G(Φ)
0.45
3.08
0.60
3.28
W1
W2
W3
2.54 (TYP)
4.50
2.34
2.56
4.90
2.74
2.96
0.70
1.24
0.90
1.47
3.20
3.40
WildGoose Semiconductor
Rev. A1.0, 2021
7
