Wild-Goose-WGP10N50SE
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WGP10N50SE
500V N-Channel MOSFET
TO-220
WGP10N50SE
Features
1
2 3
□
Low Intrinsic Capacitances
□
Excellent Switching Characteristics
□
Extended Safe Operating Area
□
Unrivalled Gate Charge : 28 nC (Typ.)
□
V
DSS
=500V,I
D
=10A
□
Lower R
DS(on)
: 0.70 Ω (Max) @V
G
=10V
1.Gate (G)
2.Drain (D)
3.Source (S)
□
100% Avalanche Tested
Absolute Maximum Ratings
(Ta=25
℃
unless otherwise noted)
Symbol
Parameter
Value
500
10.0
5.7
Unit
V
DSS
Drain-Source Voltage
Drain Current
V
T
j
=25
℃
I
D
A
T
j
=100
℃
V
GSS
E
AS
Gate-Source Voltage
±30
V
Single Pulse Avalanche Energy (note1)
190
10.0
mJ
I
AR
P
D
T
j
Avalanche Current (note2)
Power Dissipation (Tj=25
℃
)
Junction Temperature(Max)
Storage Temperature
A
W
℃
℃
50
150
T
stg
-55~+150
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
TL
300
℃
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
1.88
62.5
Unit
℃
/W
℃
/W
R
θJC
R
θJA
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
–
–
WildGoose Semiconductor Rev.1.0HL, 2015
1
WGP10N50SE
500V N-Channel MOSFET
Electrical Characteristics
(Ta=25
℃
unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ. Max Units
Off Characteristics
BV
DSS
△
BV
DSS
△T
J
Drain-Sourse Breakdown Voltage
500
—
—
0.55
—
—
—
V
ID=250
μ
A
，
VGS=0
/
Breakdown Voltage Temperature
I
D
=250
μ
A ,Reference
V/
℃
Conficient
to 25
℃
Vds=500V, Vgs=0V
Vds=400V, Tc=125
℃
—
1
μ
A
μ
A
nA
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
10
Gate-body leakage Current,
Forward
—
—
—
—
100
Vgs=+30V, Vds=0V
Vgs=-30V, Vds=0V
Gate-body leakage Current,
Reverse
-100
nA
On Characteristics
V
GS(th)
Date Threshold Voltage
Id=250uA,Vds=Vgs
Id=4.5A,Vgs=10V
2
—
4
V
Static Drain-Sourse
On-Resistance
0
R
DS(on)
—
0.7
Ω
0.65
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
—
—
—
1012
160
20
—
—
—
pF
pF
pF
VDS=25V
，
VGS=0
，
Output Capacitance
f=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics
Td(on)
Tr
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Sourse Charge
Gate-Drain Charge
—
—
—
—
—
—
25
95
55
60
28
7
60
200
120
130
36
nS
nS
nS
nS
nC
nC
nC
VDD=250V
，
ID=10A
，
RG=25
Ω
(Note 3,4)
Td(off)
Tf
Qg
VDS=400,VGS=10V
，
Qgs
Qgd
—
ID=1
0
A
(
Note 3,4)
12.5
—
Drain-Sourse Diode Characteristics and Maximum Ratings
I
S
Maximun Continuous Drain-Sourse Diode Forward Current
Maximun Plused Drain-Sourse DiodeForwad Current
—
—
—
—
9
A
A
I
SM
36
Drain-Sourse Diode Forward
V
SD
Id=10A
—
—
1.45
V
Voltage
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
I
S
=10.0A,V
GS
=0V
—
—
300
2.2
—
—
nS
di
F
/dt=100A/
μ
s
(Note3)
μ
C
1, L=8mH, IAS=1
0
A
,
V
DD=50
V
,
R
G=25
Ω
,
S
tarti
n
g
T
J
=25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
*Notes
4, Essentially Independent of Operating Temperature
WildGoose Semiconductor Rev.1.0HL, 2015
2
WGP10N50SE
500V N-Channel MOSFET
Typical Characteristics
V
GS
To
p
:
15.0 V
10.
0
V
8.
0
V
7.
0
V
6.
0
V
5.
5
V
10
1
10
1
150
o
C
5.0
V
Botto
m
:
4
.
5
V
-55
o
C
25
o
C
10
0
10
0
※
Notes :
μ
※
Notes :
1.
250 s
Puls
e
T
est
1.
V
DS
= 40V
2.
250 s
PulseTest
℃
2. T
C
=
2
5
μ
10
-1
10
-1
10
-1
10
0
10
1
2
4
6
8
10
V
GS
, Gate-Source Voltage [V]
V
DS
, Drain-Sourc
e
V
oltag
e
[
V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2.0
1.5
V
GS
= 10V
10
1
1.0
0.5
10
0
V
GS
= 20V
150
℃
※
Notes :
1.
V
GS
=
0
V
2.
250 s
PulseTest
25
℃
※
℃
Note : T
J
= 25
20
μ
10
-1
0.2
0
5
10
15
25
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
2000
1600
1200
800
12
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
V
D
S
= 100V
10
8
V
D
S
= 250V
V
DS
= 400V
C
iss
C
oss
6
※
Note
s
;
1.
V
G
S
= 0 V
2.
f = 1
M
Hz
4
2
0
C
rss
400
0
※
Note : I
D
= 9A
25
10
-1
10
0
1
10
0
5
10
15
20
30
Q
G
, Total Gate Charge [nC]
V
DS
, Drain-Sourc
e
V
oltag
e
[
V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
WildGoose Semiconductor Rev.1.0HL, 2015
3
WGP10N50SE
500V N-Channel MOSFET
Typical Characteristics
(Continued)
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※
Notes :
0.9
0.8
※
Notes :
1.
V
GS
=
0V
1. V
GS
= 10 V
2. I
D
= 4.5 A
2.
I
D
=
2
50μ A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T ,
J
Junction Temperature [
o
C]
T , Junction Temperature [
o
C]
J
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown VoltageVariation
vs Temperature
10
Operatio
n
i
n
T
hi
s
A
rea
10
2
is Limited by R
DS(on)
10
100
s
1 ms
1
0
m
s
100 ms
s
8
6
10
1
DC
10
0
4
※
Notes :
10
-1
10
-2
1. T
C
=
2
5
o
C
2
0
2. T = 150
o
C
J
3.
Singl
e
P
ulse
3
10
10
0
10
1
10
2
25
50
75
100
125
150
℃
T
C
, Case Temperature [
]
V
DS
, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9-2. Maximum Safe Operating Area
D = 0 . 5
0
10
0. 2
0. 1
※
N o te s :
℃
/W M
a x .
1 .
Z
θ
J
(
t)
=
2
.
8 6
C
2
. D u ty F a c to r , D = t
1
/t
2
3
.
T
J M
–
T
C
=
P
D
* Z
θ
J
(
t)
C
M
0. 05
-1
10
0. 02
0. 01
P
DM
t
1
t
2
s ingle
p uls e
-2
10
-5
-4
-3
-2
-1
0
1
10
10
10
10
10
10
10
t
1
, S quar e
W a v e
P uls e
D uration [ s ec ]
Figure 11-2. Transient Thermal Response Curve
WildGoose Semiconductor Rev.1.0HL, 2015
4
WGP10N50SE
500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
V
GS
Same Type
50KΩ
as DUT
Q
g
200nF
12V
10V
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
R
L
V
DS
V
DS
90%
V
DD
V
GS
R
G
10%
V
GS
DUT
10V
t
d(on)
t
r
t
d(off)
t
f
t
off
t
on
Unclamped Inductive Switching Test Circuit & Waveforms
L
BV
DSS
2
——————–
1
— —
E
=
L
I
AS
V
DS
2
BV
DSS
–
V
DD
BV
DSS
I
AS
I
D
R
G
V
DD
I
D
(t)
V
DD
V
DS
(t)
DUT
10V
t
p
t
p
Time
WildGoose Semiconductor Rev.1.0HL, 2015
5
WGP10N50SE
500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
V
DS
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
Gate Pulse Period
D =
V
GS
10V
( Driver
)
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
WildGoose Semiconductor Rev.1.0HL, 2015
6
WGP10N50SE
500V N-Channel MOSFET
Package Dimension
TO-220
WildGoose Semiconductor Rev.1.0HL, 2015
7
