Wild-Goose-WGP11N40
| Part # | Wild-Goose-WGP11N40 |
Download  | Wild-Goose-WGP11N40 |
HIGH VOLTAGE
N-Channel MOSFET
WGP11N40
400V N-Channel MOSFET
Features
□
Low Intrinsic Capacitances
□
Excellent Switching Characteristics
□
Extended Safe Operating Area
□
Unrivalled Gate Charge : 35 nC (Typ.)
□
BVDSS=400V,ID=11.4 A
TO
‐
220
G
‐
Gate,D
‐
Drain,S
‐
Sourse
□
Lower R
DS(on)
: 0.55
Ω
(Max) @VG=10V
□
100% Avalanche Tested
Absolute Maximum Ratings
Tc=25
℃
unless other wise noted
Symbol
Parameter
WG11N40
400
Units
V
V
DSS
Drain-Sourse Voltage
Drain Current
-continuous (
T
c
=25
℃
)
-continuous (
T
c
=100
℃
)
11.4
A
I
D
7.2
A
V
GS
E
AS
Gate-Sourse Voltage
±
30
V
Single Plused Avanche Energy
Avalanche Current
(Note1)
(Note2)
520
mJ
A
I
AR
11.4
P
D
147
W
Power Dissipation (
T
c
=25
℃
)
T
J
,T
STG
Operating and Storage
T
e
mperature Range
-55 ~ +150
℃
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
TL
300
℃
Thermal Characteristics
Symbol
Parameter
Typ.
—
Max
0.85
—
Units
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance,Junction to Case
Thermal Resistance,Case to Sink
℃
/W
℃
/W
℃
/W
0.5
—
Thermal Resistance,Junction to Ambient
62.5
◇
WildGoose Semiconductor
Rev.A0,August , 2010
|
1
HIGH VOLTAGE
N-Channel MOSFET
Electrical Characteristics
T
c
=25
℃
unless other wise noted
Symbol
Parameter
Test Condition
Min. Typ. Max
Units
Off Characteristics
Drain-Sourse Breakdown Voltage
400
—
—
0.42
—
—
—
V
BV
DSS
△
BV
DSS
△T
J
ID=250
μ
A
，
VGS=0
I
D
=250
μ
A,Reference
to 25
℃
/
Breakdown Voltage
T
e
mperature
Conficient
V/
℃
—
1
μ
A
μ
A
Vds=400V, Vgs=0V
Vds=320V,
T
c
=125
℃
IDSS
Zero Gate Voltage Drain Current
10
Gate-body leakage Current,
Forward
IGSSF
IGSSR
Vgs=+30V, Vds=0V
Vgs=-30V, Vds=0V
—
—
—
—
100
nA
nA
Gate-body leakage Current,
Reverse
-100
On Characteristics
V
GS(th)
R
DS(on)
Date Threshold Voltage
Id=250uA,Vds=Vgs
2
—
—
4
V
Static Drain-Sourse On-Resistance
Id=5.5A,Vgs=10V
—
0.55
ꢀ
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
—
—
—
1100
180
20
1400
240
30
pF
pF
pF
VDS=25V
，
VGS=0
，
Output Capacitance
f=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics
Td(on)
Tr
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
T
o
tal Gate Charge
Gate-Sourse Charge
Gate-Drain Charge
—
—
—
—
—
—
30
100
60
70
210
130
130
35
nS
nS
nS
nS
nC
nC
nC
VDD=200V
，
ID=11.4A
，
RG=25
Ω
(Note 3,4)
Td(off)
Tf
60
Qg
27
VDS=320,VGS=10V
，
Qgs
Qgd
7.3
12.3
—
ID=11.4A
(Note 3,4)
—
Drain-Sourse Diode Characteristics and Maximum Ratings
I
S
Maximun Continuous Drain-Sourse Diode Forward Current
Maximun Plused Drain-Sourse DiodeForwad Current
—
—
—
—
11.4
45.6
A
A
I
SM
Drain-Sourse Diode Forward
Id=11.4A
V
SD
—
—
1.5
V
Voltage
trr
Qrr
Reverse Recovery Time
I
S
=11.4A,V
GS
=0V
—
—
240
1.8
—
—
nS
di
F
/dt=100A/
μ
s
(Note3)
Reverse Recovery Charge
μ
C
1, L=7.0mH, IAS=11.4A, VDD=50V, RG=25
ꢀ
, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse
T
e
st : Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
*Notes
4, Essentially Independent of Operating
T
e
mperature
◇
WildGoose Semiconductor
Rev.A0,August , 2010
|
2
HIGH VOLTAGE
N-Channel MOSFET
Typical Characteristics
◇
WildGoose Semiconductor
Rev.A0,August , 2010
|
3
HIGH VOLTAGE
N-Channel MOSFET
Typical Characteristics
(Continued)
◇
WildGoose Semiconductor
Rev.A0,August , 2010
|
4
HIGH VOLTAGE
N-Channel MOSFET
◇
WildGoose Semiconductor
Rev.A0,August , 2010
|
5
HIGH VOLTAGE
N-Channel MOSFET
◇
WildGoose Semiconductor
Rev.A0,August , 2010
|
6
HIGH VOLTAGE
N-Channel MOSFET
Package Dimension
◇
WildGoose Semiconductor
Rev.A0,August , 2010
|
7
