Wild-Goose-WGP15N65SE
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WGP15N65SE
650V N-Channel MOSFET
TO-220
WGP15N65SE
Features:
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge :Qg= 48.5nC (Typ.).
□
VDSS=650V,I
D
=15A
1.Gate (G)
2.Drain (D)
3.Sourse (S)
□
R
DS
(on) : 0.52
Ω
(Max) @V
G
=10V
□
100% Avalanche
T
e
sted
Absolute Maximum Ratings
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Value
Unit
V
DSS
Drain-Source Voltage
650
15
V
T
25
℃
I
D
Drain Current
A
T
C
=100
℃
9.5
±30
920
V
GSS
V
Gate – Source voltage
E
AS
Single Pulse Avalan
Energy (note1)
mJ
I
AR
P
D
T
j
Avalanche Current (note2)
Power Di
ation (
T
c
=25
℃
)
Junction
T
e
mperature(Max)
Storage
T
e
mperature
15
60
A
W
150
T
stg
-55~+150
℃
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
TL
300
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
2.08
62.5
Unit
R
θ
JC
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
–
–
℃
/W
R
θ
JA
WildGoose Semiconductor
Rev. A1.0, 2015
1
WGP15N65SE
650V N-Channel MOSFET
Electrical Characteristics
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250
μ
A
，
V
GS
=0
650
–
0.71
–
–
–
V
Breakdown Voltage
T
e
mperature
Coefficient
I
D
=250
μ
A ,Reference
to 25
℃
△
BVDSS/
△
TJ
V/
℃
–
–
V
DS
=650V, V
GS
=0V
10
I
DSS
Zero Gate Voltage Drain Current
μ
A
V
DS
=480V,
T
c
=125
℃
100
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
I
GSSF
I
GSSR
On Characteristics
V
GS(TH)
Date Threshold Voltage
R
DS(ON)
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
–
–
–
–
100
nA
-100
I
D
=250
μ
A,V
DS
=V
2
–
–
4
V
Static Drain-Source
On-Resistance
I
D
=7.5A,V
GS
=10V
0.
45
0.52
ꢀ
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
–
–
–
2
450
295
–
–
–
V
DS
=25V
，
V
GS
=0
，
f=1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
23.6
Switching Characteristics
Td(on)
Tr
Turn-On Delay Time
–
–
–
–
–
–
–
65
125
105
65
140
260
220
140
63
–
Turn-On Rise Time
Turn-Off Delay
e
Turn-Off Rise Time
T
o
tal Gate Charge
Gate-
rce Charge
Gate-Drain Charge
V
DD
=325V
，
I
D
=15A
R
G
=21.7
ꢀ
(Note 3,4)
ns
Td(off)
Tf
Qg
48.5
14
V
DS
=480
V
,V
GS
=10V
，
I
D
=15A (Note 3,4)
Qgs
Qgd
nC
21
–
Drain-Source Diode Characteristics and Maximum Ratings
Is
Max. Diode Forward Current
Max. Pulsed Forward Current
Diode Forward Voltage
–
–
–
–
–
–
15
60
1.4
–
A
I
SM
V
SD
Trr
–
–
–
I
D
=15A
V
I
S
=15A,V
GS
=0V
diF/dt=100A/
μ
s
(Note3)
Reverse Recovery Time
496
nS
Qrr
Reverse Recovery Charge
5.69
–
–
μ
C
Notes : 1, L=8.15mH, IAS=15A, VDD=50
V
,
R
G=25
ꢀ
, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse
T
e
st : Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
4, Essentially Independent of Operating
T
e
mperature
WildGoose Semiconductor
Rev. A1.0, 2015
2
WGP15N65SE
650V N-Channel MOSFET
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Top :
10
1
10
0
10
-1
Bottom :
5.5 V
10
1
150
o
C
25
o
C
-55
o
C
※
No
es :
※
Notes :
1. V
DS
= 40V
1. 250µ s Pulse Test
2. T
C
= 25
℃
2. 250µ s Pulse Test
10
0
2
4
6
8
10
12
10
-1
10
0
10
1
V
GS
, Gate-S
Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Vari
vs. Source Current
and Temperatue
1.0
0.8
0.6
0.4
0.2
0.0
V
G
S
= 10V
10
1
150
℃
25
℃
V
G
S
= 20V
※
Notes :
1. V
G
S
= 0V
2. 250µ s Pulse Test
※
N
ote : T = 25
℃
J
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
10
20
40
50
V
SD
, Source-Drain voltage [V]
I
D
,
D
rain Current [A]
Figure 5. Cap
ance Characteristics
Figure 6. Gate Charge Characteristics
12
10
8
5000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
rss
= C
gd
C
V
DS
= 130V
C
oss
4000
3000
2000
1000
0
V
DS
= 325V
V
DS
= 520V
C
iss
6
4
※
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
2
※
Note :
I
D
= 15A
0
10
-1
10
0
10
1
0
10
20
30
40
50
V
DS
, Drain-Source Voltage [V]
Q , Total Gate Charge [nC]
WildGoose Semiconductor
Rev. A1.0, 2015
3
WGP15N65SE
650V N-Channel MOSFET
Typical Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
※
Notes :
1. V
G
S
= 0 V
0.9
Notes :
1. V
= 10 V
GS
0.5
2. I
D
= 250 µ A
2. I
D
= 7.5 A
0.8
-100
0.0
-50
0
50
100
150
200
-100
-50
50
100
150
200
0
T
J
, Junction Temperature [
o
C]
o
T
J
,
Junc
mperature [ C]
Figure 9-2. Safe Operating Area
Figure 10. Maximum
ain Current vs. Case Temperature
18
15
12
9
10
2
10
1
10
µ
s
100
µ
s
1 ms
10 ms
100 ms
DC
Operation in This Area
is Limited by R
DS(on)
10
0
10
-1
10
-2
6
※
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3
3. S
ngle Pulse
0
10
0
10
1
10
3
25
50
75
100
125
150
T
C
, Case Temperature [
℃
]
V
DS
, Drain-Sour
Volta
[V]
Figure 11-2. Transient Thermal Response Curve
10
0
D =
0
.5
0.2
0.1
1
0
-1
0.05
0.02
0.01
※
N o te s
:
1 .
Z
P
(
t)
=
1.7
℃
/W M
ax.
2 .
D
u
ty
F acto r,
1
/t
2
3 .
T
J
M
T
C q
J
C
(
t)
θ
J
D
C
M
1
0
-2
D
= t
Z
single pulse
–
=
P
t
*
D
1
M
t
2
1
0
-5
10
-4
10
-3
10
-2
10
-1
1
0
0
10
1
t
1
, S
q
u
are
W ave
P u
l
se
D uration
[sec]
WildGoose Semiconductor
Rev. A1.0, 2015
4
WGP15N65SE
650V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
WildGoose Semiconductor
Rev. A1.0, 2015
5
WGP15N65SE
650V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
WildGoose Semiconductor
Rev. A1.0, 2015
6
WGP15N65SE
650V N-Channel MOSFET
Package Dimension
TO-220
Unit:mm
尺寸
符号
尺寸
尺寸
尺寸
符号
符号
符号
Min
Max
Min
Max
Min
Max
Min
Max
W
9.66
2.54
（
TYP
）
0.70
1.17
1.32
10.28
W5
L
L1
L2
L3
9.80
9.00
6.40
2.70
10.20
9.40
6.80
2.90
L4**
L5
T
T1
T2
6.20
2.79
4.30
1.15
2.20
6.60
3.30
4.70
1.40
2.60
T3
G(
Φ
)
0.45
3.50
0.60
3.70
W1
W2
W3
W4
*
0.95
1.37
1.72
12.70
14.27
WildGoose Semiconductor
Rev. A1.0, 2015
7
