Wild-Goose-WGP20N60SE
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WGP20N60SE
600V N-Channel MOSFET
TO-220
WGP20N60SE
Features:
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge :Qg=75 nC (Typ.).
□
V
DSS
=600V,I
D
=20A
1.Gate (G)
2.Drain (D)
3.Source (S)
□
R
DS
(on) : 0.
4
Ω
(
Max) @V
G
=10V
va anc
e es
e
□
100% A
h T
t d
l
Absolute Maximum Ratings
(Ta=25
℃
unless otherwise noted)
Symbol
Parameter
Value
600
20
Unit
V
DSS
Drain-Source Voltage
Drain Current
V
T
C
=25
℃
I
D
A
T
C
=100
℃
12.5
±30
580
V
GSS
E
AS
Gate-Source Voltage
V
Single Pulse Avalanche Energy (note1)
mJ
I
AR
P
D
T
j
Avalanche Current (note2)
Power Dissipation (Tc=25
℃
)
Junction Temperature(Max)
Storage Temperature
20
84
A
W
150
T
stg
-55~+150
℃
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
TL
300
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
1.48
62.5
Unit
R
θJC
R
θJA
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
–
–
℃
/W
WildGoose Semiconductor Rev.1.0HD, 2015
1
WGP20N60SE
600V N-Channel MOSFET
Electrical Characteristics
(Ta=25
℃
unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250μA
，
V
GS
=0
600
–
–
–
V
Breakdown Voltage Temperature
I
D
=250μA ,Reference
△
BVDSS/
△
TJ
–
–
0.71
–
V/
℃
Coefficient
to 25
℃
V
DS
=600V, V
GS
=0V
V
DS
=520V, Tc=125
℃
10
I
DSS
Zero Gate Voltage Drain Current
μA
nA
100
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
I
GSSF
I
GSSR
On Characteristics
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
–
–
–
–
100
-100
V
GS(TH)
R
DS(ON)
Date Threshold Voltage
I
D
=250μA,V
DS
=V
GS
I
D
=10A,V
GS
=10V
2
–
–
4
V
Ω
Static Drain-Source
On-Resistance
0.33
0.4
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
–
–
–
3420
325
25
–
–
–
V
DS
=25V
，
V
GS
=0
，
f=1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Switching Characteristics
Td(on)
Tr
Turn-On Delay Time
–
–
–
–
–
–
–
62
140
230
65
135
290
470
140
98
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=300V
，
I
D
=20A
R
G
=25Ω (Note 3,4)
ns
Td(off)
Tf
Qg
75
V
DS
=520,V
GS
=10V
，
I
D
=20A (Note 3,4)
Qgs
Qgd
13.5
36
18
nC
–
Drain-Source Diode Characteristics and Maximum Ratings
Is
Max. Diode Forward Current
Max. Pulsed Forward Current
Diode Forward Voltage
–
–
–
–
–
–
20
80
1.4
–
A
I
SM
V
SD
Trr
–
–
–
I
D
=20A
V
I
S
=20A,V
GS
=0V
diF/dt=100A/μs
(Note3)
Reverse Recovery Time
530
nS
Qrr
Reverse Recovery Charge
–
10.5
–
μC
Notes : 1, L=3.45mH, IAS=20A, VDD=50V, RG=25Ω, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature
WildGoose Semiconductor Rev.1.0HD, 2015
2
WGP20N60SE
600V N-Channel MOSFET
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
V
GS
15.
0
V
10.
0
V
8.
0
V
7.
0
V
6.
5
V
6.0 V
Top :
10
1
Bottom :
5.5 V
10
1
150
o
C
25
o
C
10
0
-55
o
C
※
Notes :
※
Notes :
1.
250µ s Pulse Test
2. T
C
=
2
5
℃
1. V
DS
=
4
0V
2. 250µ s Puls
e
T
est
10
-1
10
0
2
4
6
8
10
12
10
-1
10
0
10
1
V
GS
, Gate-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 3. On-ResistanceVariation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs.Source Current
and Temperatue
1.0
0.8
0.6
0.4
V
GS
= 10V
10
1
150
℃
25
℃
V
GS
= 20V
0.2
0.0
※
Notes :
1. V
GS
= 0V
※
Not
e
:
T
J
= 25
℃
2. 250µ
s
P
ulse Test
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
10
20
30
40
50
V
SD
, Source-Drain voltage [V]
I
D
, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
10
5000
C
is
s
= C
g
s
+ C
g
d
(C
ds
= shorted)
C
os
s
= C
ds
+ C
gd
C
rss
= C
gd
V
DS
= 130V
C
oss
4000
3000
2000
1000
0
V
DS
= 325V
V
DS
= 520V
C
8
iss
6
4
※
Note ;
1.
V
G
S
=
0
V
2.
f =
1
M
Hz
C
rss
2
0
※
Note : I
D
= 15A
40
10
-1
10
0
10
1
0
10
20
30
50
V
DS
, Drain-Source Voltage [V]
Q , Total Gate Charge [nC]
WildGoose Semiconductor Rev.1.0HD, 2015
3
WGP20N60SE
600V N-Channel MOSFET
Typical Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1
.
0
※
Notes :
1. V
GS
0 V 2.
I
D
= 250 µ A
0.9
0.8
※
Notes :
=
0.5
1. V
GS
= 10 V
2. I
D
= 7.5 A
0.0
-100
-50
50
100
150
200
-100
-50
0
50
100
150
200
0
T ,
J
Junction Temperature [ C]
T ,
J
Junction Temperature [
o
C]
o
Figure 9 Safe Operating Area
10
2
10
1
10 s
100
1 ms
10 ms
100 ms
DC
s
Operation in This Area
is Limited by R
DS(on)
10
0
※
Notes :
1. T
= 25
o
10
-1
C
C
2. T = 150
o
C
J
3. Single Pulse
10
-2
10
0
10
1
10
2
10
3
V
DS
, Drain-Source Voltage [V]
Figure 11 Transient Thermal Response Curve
0
10
D= 0 .5
0.2
0.1
-1
10
10
0.0 5
0.0 2
0.0 1
※
No te
s :
1.
Z
P
D
C
(
t)
=
M
1 .7
℃
/W M
ax.
. D u ty F a c to r, D = t
1
/t
2
J
-2
s ing
le puls
e
2
3
.
T
J
M
–
T
C
=
P
t
D
1
M
*
Z
q
J
C
(t)
t
2
-5
-4
-3
-2
-1
0
1
10
10
10
10
10
10
10
t
1
, S q uare W av e P uls e D uration [ s ec ]
WildGoose Semiconductor Rev.1.0HD, 2015
4
WGP20N60SE
600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
WildGoose Semiconductor Rev.1.0HD, 2015
5
WGP20N60SE
600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveform
WildGoose Semiconductor Rev.1.0HD, 2015
6
WGP20N60SE
600V N-Channel MOSFET
Package Dimension
TO-220
Unit: mm
Size
Size
Size
Size
Symbol
Symbol
Symbol
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
W
9.66
2.54
（
TYP
）
0.70
1.17
1.32
10.28
W5
L
L1
L2
L3
9.80
9.00
6.40
2.70
12.70
10.20
9.40
6.80
2.90
14.27
L4**
L5
T
T1
T2
6.20
2.79
4.30
1.15
2.20
6.60
3.30
4.70
1.40
2.60
T3
G(
Φ
)
0.45
3.50
0.60
3.70
W1
W2
W3
W4
*
0.95
1.37
1.72
WildGoose Semiconductor Rev.1.0HD, 2015
7
