Wild-Goose-WGU2N60SE
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WGU2N60 SE
600V N-Channel MOSFET
TO-251
WGU2N60SE
Features:
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge :Qg= 90nC (Typ.).
□
BVDSS=600
V
,
I
D
=2A
1.Gate (G)
2.Drain (D)
3.Source (S)
□
R
DS
(on) : 4.5
Ω
(Max) @V
G
=10V
□
100% Avalanche
T
e
sted
Absolute Maximum Ratings
(
T
a
=25
℃
unless otherwi
e noted)
Symbol
Parameter
Value
600
2
Unit
V
DSS
Drain-Source Voltage
V
T
C
=25
℃
I
D
Drain Current
A
C
=100
℃
1.5
V
GSS
E
AS
Gate-Source Voltag
±30
120
V
Single Pulse Avalanche Energy (note1)
mJ
I
AR
P
D
T
j
Avalanche
rent (note2)
Power Dissipation (
T
a
=25
℃
)
Junction
T
e
mperature(Max)
Storage
T
e
mperature
2
40
A
W
150
T
stg
-55~+150
℃
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
TL
300
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
2.87
50
Unit
R
θ
JC
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
–
–
℃
/W
R
θ
JA
WildGoose Semiconductor
Rev. A1.0,2015
1
WGU2N60 SE
600V N-Channel MOSFET
Electrical Characteristics
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Characteristics
Drain-Source Breakdown
Voltage
Breakdown Voltage
T
e
mperature Coefficient
BV
DSS
I
D
=250
μ
A
，
V
GS
=0
600
–
–
–
V
I
D
=250
μ
A ,Reference
to 25
℃
V
DS
=600V, V
GS
=0V
△
BVDSS/
△
TJ
V/
℃
–
–
0.4
–
1
10
I
DSS
Zero Gate Voltage Drain Current
μ
A
V
DS
=520V, T
C
=125
℃
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
I
GSSF
I
GSSR
V
GS
=+30V, V
DS
=0V
–
–
–
–
100
nA
V
GS
=-30V, V
DS
=0V
-100
On Characteristics
V
GS(TH)
Gate Threshold Voltage
R
DS(ON)
I
D
=250
μ
A,V
DS
=V
GS
2
–
–
4
V
Static Drain-Source
On-Resistance
I
D
=1A,V
GS
=10V
ꢀ
4.5
3.6
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
–
–
–
270
40
5
350
50
7
V
DS
=25V
，
V
GS
=0
，
f=
MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Switching Characteristics
Td(on)
Tr
Turn-On Delay Time
–
–
–
–
–
–
–
10
25
20
25
90
1.6
4.3
30
60
50
60
110
–
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Rise Time
T
o
tal Gate Ch
Gate-Source Charge
Gate
Drain Charge
V
DD
=300V
，
I
D
=2A
R
G
=25
ꢀ
(Note 3,4)
ns
Td(off)
Tf
Qg
V
DS
=520V,V
GS
=10V
，
I
D
=2A (Note 3,4)
Qgs
Qgd
nC
–
Drain-Source Diode Characteristics and Maximum Ratings
Is
Max. Diode Forward Current
Max. Pulsed Forward Current
Diode Forward Voltage
–
–
–
–
–
–
2
8
A
I
SM
V
SD
Trr
–
–
–
I
D
=2A
1.5
–
V
I
S
=2A,V
GS
=0V
diF/dt=100A/
μ
s
(Note3)
Reverse Recovery Time
180
ns
Qrr
Reverse Recovery Charge
–
0.72
–
μ
C
Notes : 1, L=60mH, IAS=2A, VDD=50
V
,
R
G=25
ꢀ
, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse
T
e
st : Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
4, Essentially Independent of Operating
T
e
mperature
WildGoose Semiconductor
Rev. A1.0,2015
2
WGU2N60 SE
600V N-Channel MOSFET
Typical Characteristics
WildGoose Semiconductor
Rev. A1.0,2015
3
WGU2N60 SE
600V N-Channel MOSFET
Typical Characteristics
(Continued)
WildGoose Semiconductor
Rev. A1.0,2015
4
WGU2N60 SE
600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
WildGoose Semiconductor
Rev. A1.0,2015
5
WGU2N60 SE
600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveform
WildGoose Semiconductor
Rev. A1.0,2015
6
WGU2N60 SE
600V N-Channel MOSFET
Package Dimension
TO-251
Unit: mm
WildGoose Semiconductor
Rev. A1.0,2015
7
