Wild-Goose-WGU7N60SE
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WGU7N60SE/WGD7N60SE
60
0V N-Channel MOSFET
WGU7N60SE/WGD7N60SE
Features:
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge :Qg=
16
nC (Typ.).
□
BVDSS=
650
V
,
I
D
=
7
A
TO
‐
252
TO
‐
251
1.Gate (G)
2.Drain (D)
3.Source (S)
□
R
DS
(on) :
1.
3
5
Ω
(Max) @V
G
=10V
□
100% Avalanche
T
e
sted
Absolute Maximum Ratings
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Value
60
0
7
Unit
V
DSS
Drain-Source Voltage
Drain Current
V
T
j
=25
℃
I
D
A
T
j
=100
℃
4.
9
V
GS(TH)
E
AS
Gate Threshold V
e
±30
30
0
V
Single Pulse
anche Energy (note1)
mJ
I
AR
P
D
T
j
Avalanche Current (note2)
Pow
Dissipation (Tj=25
℃
)
Junction
T
e
mperature(Max)
Storage
T
e
mperature
7
80
A
W
℃
℃
150
T
stg
-55~+150
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
TL
300
℃
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
1.56
110
Unit
℃
/W
℃
/W
R
θ
JC
R
θ
JA
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
–
–
WildGoose Semiconductor
Rev. A1.0, 2015
1
WGU7N60SE/WGD7N60SE
60
0V N-Channel MOSFET
Electrical Characteristics
(
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250
μ
A
，
V
GS
=0
60
0
–
–
–
V
Breakdown Voltage
T
e
mperature
Coefficient
I
D
=250
μ
A ,Reference
to 25
℃
△
BVDSS/
△
TJ
V/
℃
–
–
0
.
6
V
DS
=
65
0V, V
GS
=0V
V
DS
=
48
0V, Tj=125
℃
V
GS
=+30V, V
DS
=0V
–
1
I
DSS
Zero Gate Voltage Drain Current
μ
A
10
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
I
GSSF
I
GSSR
–
–
–
–
100
nA
V
GS
=-30V, V
DS
=0V
-100
On Characteristics
V
GS(TH)
Date Threshold Voltage
R
DS(ON)
I
D
=250
μ
A,V
DS
=V
G
I
D
=
3
.5
A,V
GS
=10V
2
–
–
4
V
Static Drain-Source
On-Resistance
1.25
1.
3
5
ꢀ
Dynamic Characteristics
1230
65
Ciss
Coss
Crss
Input Capacitance
–
–
–
1450
85
V
D
25V
，
V
GS
=0
，
f=1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
7
10
Switching Characteristics
Td(on)
Tr
Turn-On Delay Time
–
–
–
–
–
–
–
1
5
40
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Rise Tim
T
o
tal Gate Charge
Gate-Source Charge
Gate-D
Charge
45
45
1
0
0
1
0
0
V
DD
=
30
0V
，
I
D
=
3.5
A
R
G
=25
ꢀ
(Note 3,4)
ns
Td(off)
Tf
1
00
45
16
Qg
20
–
V
DS
=4
8
0V,V
GS
=10V
，
I
D
=
7
A (Note 3,4)
Qgs
Qgd
3.5
6.5
nC
–
Drain-Source Diode Characteristics and Maximum Ratings
Is
Max. Diode Forward Current
Max. Pulsed Forward Current
Diode Forward Voltage
–
–
–
–
–
–
–
7
A
I
SM
V
SD
Trr
–
28
I
D
=
7
A
V
–
1.
5
–
I
S
=
7
A,V
GS
=0V
diF/dt=100A/
μ
s
(Note3)
Reverse Recovery Time
31
0
n
s
Qrr
Reverse Recovery Charge
–
2.1
–
μ
C
Notes : 1, L=
3
4.3
mH, IAS=
7
A, VDD=50
V
,
R
G=25
ꢀ
, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse
T
e
st : Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
4, Essentially Independent of Operating
T
e
mperature
WildGoose Semiconductor
Rev. A1.0, 2015
2
WGU7N60SE/WGD7N60SE
60
0V N-Channel MOSFET
Typical Characteristics
WildGoose Semiconductor
Rev. A1.0, 2015
3
WGU7N60SE/WGD7N60SE
60
0V N-Channel MOSFET
Typical Characteristics
(Continued)
WildGoose Semiconductor
Rev. A1.0, 2015
4
WGU7N60SE/WGD7N60SE
60
0V N-Channel MOSFET
WildGoose Semiconductor
Rev. A1.0, 2015
5
WGU7N60SE/WGD7N60SE
60
0V N-Channel MOSFET
WildGoose Semiconductor
Rev. A1.0, 2015
6
WGU7N60SE/WGD7N60SE
60
0V N-Channel MOSFET
Package Dimension
TO-252
Unit: mm
WildGoose Semiconductor
Rev. A1.0, 2015
7
WGU7N60SE/WGD7N60SE
60
0V N-Channel MOSFET
Package Dimension
TO-251
Unit: mm
WildGoose Semiconductor
Rev. A1.0, 2015
8
