WILLSEMI-Will-Semicon-WCM2001-6-TR
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WCM2001
WCM2001
N- and P-Channel Complementary, 20V, MOSFET
V
(BR)DSS
R
DS(on)
Typ.
( m
ȍ
)
180
@ 4.5V
225
@ 2.5V
280
@ 1.8V
85 @ -4.5V
110 @ -2.5V
150 @ -1.8V
N-Channel
20 V
P-Channel
-20 V
G2
5
S2
4
D1
6
Descriptions
The WCM2001 is the N- and P-Channel
enhancement MOS Field Effect Transistor as a single
package for DC-DC converter or Load switch
applications, uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. Standard Product WCM2001 is Pb-free.
1
2
G1
3
D2
S1
Pin configuration (Top view)
Features
z
z
Trench
T
e
chnology
Supper high density cell design for extremely low
Rds(on)
WLSI
3J
WW
=Company
= Device Code
= Week Code
z
z
Exceptional ON resistance and maximum DC
current capability
Small package design with
DFN2x2-6L.
Marking
Order Information
Applications
Device
WCM2001-6/TR
Package
DFN2x2-6L
Shipping
3000/
T
a
pe&Reel
z
z
z
Driver: Relays, Solenoids, Lamps, Hammers
Power supply converters circuit
Load/Power Switching for potable device
Will Semiconductor Ltd.
1
Dec,
2011 – Rev.1.
3
WCM2001
Absolute Maximum Ratings
(T
A
=25
o
C unless otherwise noted)
Symbol
V
DSS
Parameter
Drain-to-Source Voltage
N-Channel
20
P-Channel
Unit
V
-20
f
8
-3.1
-4.1
V
GSS
Gate-to-Source Voltage
ꢀ
f
6
V
Drain Current – Continue
Note1
Drain Current – Pulsed (t<300us, Duty<2%)
Note1
Power Dissipation –
Note1
Power Dissipation –
Note2
Operation junction temperature range
Storage temperature range
0.65
A
I
D
1.
4
A
1. 5
P
D
W
0.7
150
O
T
J
C
O
T
SG
-55~150
C
Thermal Resistance Ratings
(T
A
=25
o
C unless otherwise noted)
Symbol
Parameter
Single
Dual
Unit
Operation
Operation
Typ.
65
Max. Typ. Max.
O
Thermal Resistance, Junction to Ambient –
Note1
Thermal Resistance, Junction to Ambient –
Note2
82
52
65
C/W
C/W
R
T
JA
R
T
JA
O
145
175
116
140
Note1
: Surface mounted on a 2
OZ
copper, 1 in
2
pad, FR-4 board.
Note2
: Surface mounted on a 2 oz copper, minimum pad, FR-4 board
Will Semiconductor Ltd.
2
Dec,
2011 – Rev.1.
3
WCM2001
Electronics Characteristics
(T
A
=25
o
C unless otherwise noted)
Symbol Parameter
Test Condition
Min
Typ.
Max
Unit
Off Characteristics
Drain-Source
V(
BR
)
DSS
Breakdown V
GS
=0
V
, I
D
=250uA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
V
Voltage
V
GS
=0
V
, I
D
=-250uA
-20
Zero Gate Voltage Drain
V
DS
=16V, V
GS
=0V
1
I
DSS
I
GSS
uA
uA
Current
V
DS
=-16V,
V
GS
=0V
V
DS
=0
V
, V
GS
=
f
5V
V
DS
=0
V
, V
GS
=
f
8V
-1
f
5
f
0.1
Gate –Source leakage current
ON Characteristics
0.4
0.55
-0.56
180
85
0.85
-1.00
310
120
360
150
460
200
ꢀ
V
DS
= V
GS
, I
D
=250uA
V
DS
= V
GS
, I
D
=-250uA
V
GS
=4.5
V
,
I
D
=0.55A
V
GS
=-4.5
V
,
I
D
=-3.1A
V
GS
=2.5
V
,
I
D
=0.45A
V
GS
=-2.5
V
,
I
D
=-2.8A
V
GS
=1.8
V
,
I
D
=0.35A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
V
-0.4
225
110
280
150
2.0
m
Drain-Source On-Resistance
Forward Transconductance
V
GS
=-1.8
V
,
I
D
=-1.5A
V
DS
= 5
V
,
I
D = 0.55A
V
DS
= -5
V
, I
D
=-0.45A
S
ꢀ
12
Dynamic Characteristics
N-Ch
P-Ch
50
470
13
Ciss
Input Capacitance
NMOS: V
DS
=10
V
,
V
GS
=0V, F=100kHz
N-Ch
pF
Coss
Crss
Q
G(TOT)
Q
G(TH)
Q
GS
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
PMOS:V
DS
=-10
V
,
V
GS
=0V, F=1MHz
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
55
8
50
1.15
6
NMOS: V
DS
=10
V
,
0.06
0.34
0.15
0.75
0.23
1.2
Threshold gate charge
Gate-Source Charge
Gate-Drain Charge
V
GS
=4.5
V
,
I
D
=0.55A
nC
PMOS: V
DS
=-10
V
,
V
GS
=-4.5
V
,
I
D
=-2.7A
Q
GD
Will Semiconductor Ltd.
3
Dec,
2011 – Rev.1.
3
WCM2001
Symbol Parameter
Test Condition
Min
Typ.
Max
Unit
Switching Characteristics
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
22
9
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
t
d(on)
t
r
NMOS:V
DD
=10
V
,
R
L
=18
, V
GEN
=4.5
V
,
I
D
=0.55A
,
,
R
G
=6
80
7
ns
700
40
380
7
PMOS:V
DD
=-10
V
,
R
L
=3.7
, V
GEN
=-4.5
V
,
I
D
=-2.7A,
, R
G
=6
t
d(off)
t
f
Drain-to-Source Diode Characteristics
Forward Diode Voltage
V
GS
=0
V
, I
S
=0.15A
V
GS
=0
V
, I
S
=-0.9A
N-Ch
P-Ch
0.5
-0.5
0.70
-0.70
1.5
-1.5
V
V
SD
Will Semiconductor Ltd.
4
Dec,
2011 – Rev.1.
3
WCM2001
Typical Performance Graph (N-Channel)
2.0
1.6
1.2
0.8
0.4
0.0
4
V
= 2.5V ~5.0V
GS
V
DS
=5V
3
2
1
0
V
=2.0V
GS
T=-50
o
C
T=25
o
C
T=125
o
C
V
=1.5V
GS
0.0
0.4
0.8
1.2
1.6
2.0
0.0
0.4
0.8
1.2
1.6
2.0
V
-Gate-to-Source Voltage(V)
V
-Drain-to-Source Voltage(V)
GS
DS
Output characteristics
Transfer characteristics
1600
1200
800
400
350
300
250
200
150
100
V
GS
=1.8V
V
GS
=2.5V
V
GS
=4.5V
400
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.4
0.8
1.2
1.6
2.0
V
-Gate-to-Source Voltage(V)
I
-Drain-to-Source Current(A)
GS
DS
On-Resistance vs. Drain current
On-Resistance vs. Gate-to-Source voltage
320
280
240
200
160
120
0.8
VGS=4.5V, ID=0.55A
I
D
=250uA
0.7
0.6
0.5
0.4
0.3
0.2
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
Temperature(
o
C)
Temperature (
o
C)
On Resistance vs. Junction Temperature
Threshold voltage vs. Temperature
Will Semiconductor Ltd.
5
Dec,
2011 – Rev.1.
3
WCM2001
0.8
0.6
0.4
0.2
60
50
40
30
20
10
0
V
GS
=0V
F=100kHz
T=150
o
C
Ciss
Coss
Crss
T=25
o
C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
0
2
4
6
8
10
V
SD
-Source-to-Drain Voltage(V)
V
DS
Drain-to-Source Voltage (V)
Capacitance
Body diode forward voltage
Safe operating power
Normalized Thermal Transient Impedance,
Junction-to-Ambient
Will Semiconductor Ltd.
6
Dec,
2011 – Rev.1.
3
WCM2001
Typical Performance Graph (P-Channel)
Will Semiconductor Ltd.
7
Dec,
2011 – Rev.1.
3
WCM2001
Will Semiconductor Ltd.
8
Dec,
2011 – Rev.1.
3
WCM2001
Package Outline Dimension
DFN2x2-6L Dual
Dimension in Millimeters
Symbol
Min.
0.700
0.000
Max.
0.800
0.050
A
A1
A3
D
0.203REF
1.924
1.924
0.520
0.900
2.076
2.076
0.720
1.100
E
D1
E1
k
0.200MIN
0.650TYP
b
0.250
0.174
0.350
0.326
e
L
Will Semiconductor Ltd.
9
Dec,
2011 – Rev.1.
3
