WILLSEMI-Will-Semicon-WCR190N65DV
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WCR190N65DV
WCR190N65DV
Single N-Channel, 650V,17A, Super Junction
MOSFET
V
DS
(V)
Max. R
DS(on)
(mΩ)
650
200 @ V
GS
=10V
DFN8X8-4L
Description
The WCR190N65DV is new generation of high voltage
MOSFET that is utilizing an advanced charge balance
mechanism for outstanding low on-resistance and lower
gate charge performance. This advanced technology
has been tailored to minimize conduction loss, provide
superior switching performance, and withstand extreme
dv/dt rate and higher avalanche energy. This device is
suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Internal schematic diagram
Features
⚫
⚫
⚫
Extremely low gate charge
100% avalanche tested
100% Rg tested
DV
= Special Code
= Year
Y
W
= Week(A~z)
Marking
Applications
Order information
⚫
Switching applications
Device
WCR190N65DV
Package
Shipping
DFN8X8-4L 3000/
T
a
pe&Reel
Will Semiconductor Ltd.
1
2022/7/29- Rev.1.0
WCR190N65DV
Absolute Maximum ratings
Parameter
Symbol
V
DS
Maximum
Unit
Drain-Source Voltage
Gate-Source Voltage
650
±
30
17
V
V
GS
T
C
=25°C
A
A
Continuous Drain Current
I
D
T
C
=100°C
11
Pulsed Drain Current
c
I
DM
47
A
Avalanche Energy L=60mH
E
AS
307
mJ
T
C
=25°C
143
Power Dissipation
b
P
D
W
T
C
=100°C
57
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
T
J
-55 to 150
-55 to 150
°C
°C
T
STG
Thermal resistance ratings
Single Operation
Parameter
Symbol
Typical
Maximum
Unit
t ≤ 10 s
12
39
15
49
Junction-to-Ambient Thermal Resistance
a
Junction-to-Case Thermal Resistance
R
θJA
Steady State
Steady State
°C/W
R
θJC
0.7
0.9
Note:
a
b
FR-4 board (38mm X 38mm X t1.6mm, 70um Copper) partially covered with copper (645mm
2
area).
The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heat sinking is used.
Repetitive rating, ~10us pulse width, duty cycle ~1%, keep initial T
J
=25°C, the maximum allowed junction
temperature of 150°C.
c
d
The static characteristics are obtained using ~380us pulses, duty cycle ~1%.
Will Semiconductor Ltd.
2
2022/7/29- Rev.1.0
WCR190N65DV
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BV
DSS
I
DSS
V
GS
= 0 V, I
D
= 250uA
V
DS
=650V, V
GS
= 0V
V
DS
= 0 V, V
GS
= ±30V
650
V
1
uA
nA
I
GSS
±100
V
GS(TH)
R
DS(on)
V
GS
= V
DS
, I
D
= 250uA
V
GS
=10V, I
D
=6.0A
2
3
4
V
Drain-to-source On-resistance
160
200
mΩ
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
GS
1584
38
V
GS
=0
V
, f =
1
.0MHz,
V
DS
= 400 V
Output Capacitance
pF
Reverse Transfer Capacitance
T
o
tal Gate Charge
2.3
40
V
GS
=10V,V
DD
= 400V,
I
D
= 6.0A
Gate-to-Source Charge
Gate-to-Drain Charge
7.5
14
nC
Ω
Q
GD
R
g
Gate Resistance
f=1MHz
9.3
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
19
12
V
GS
=10V
V
DD
=400V
I
D
=6.0A
Rise Time
tr
ns
Turn-Off Delay Time
td(OFF)
tf
103
46
Rg=10Ω
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
I
SD
V
GS
= 0 V, I
S
= 6.0 A
1.5
12
47
V
A
Body-Diode Continuous Current
Body-Diode Pulsed Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Peak reverse recovery Current
I
SDM
Trr
A
355
3.3
ns
uC
A
V
DS
=400V
IF=10A
Qrr
Irrm
di/dt=100A/us
18.7
Will Semiconductor Ltd.
3
2022/7/29- Rev.1.0
WCR190N65DV
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
4
V
ra
V
8
t
GS
=
2
50
45
40
35
30
25
20
15
10
5
30
25
20
15
10
5
V
GS
=10V
V
GS
=7V
V
GS
=6V
V
DS
=20V
T=-50
o
C
T=25
o
C
T=150
o
C
V
GS
=5V
V
GS
=4.5V
0
0
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
V
GS
-Gate to Source Voltage(V)
V
DS
-Drian-to-Source Voltage (V)
Output Characteristics
d
Transfer Characteristics
d
1.2
1.1
1.0
0.9
0.8
I
D
=250uA
V
GS
=4.5V
0.24
V
GS
=5V
0.22
0.20
0.18
0.16
V
GS
=6V
V
GS
=7V
V
GS
=10V
12
4
8
16
20
-50
-25
0
25
50
75
100
125
150
I
DS
–
Drian
to Source Current(A)
Temperature
(
o
C
)
On-Resistance vs. Drain Current
d
BVdss vs. Temperature
d
2.5
2.0
1.5
1.0
0.5
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
V
GS
=10V
I
D
=250uA
I
D
=6،0A
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature
(
o
C
)
Temperature
(
o
C
)
On-Resistance vs. Junction Temperature
d
Will Semiconductor Ltd.
Threshold Voltage vs. Temperature
d
4
2022/7/29- Rev.1.0
WCR190N65DV
10000
1000
100
10
C
iss
10
1
V
GS
=0
f=1MHz
T=150
o
C
T=25
o
C
C
oss
0.1
T=-50
o
C
C
rss
0.01
1
1E-3
0.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0
50
100
150
200
250
300
350
400
450
500
V
DS
-Drian to Source Voltage (V)
V
DS
–
Drian
to Source Voltage(V)
Capacitance
Body Diode Forward Voltage
d
10
2
10
1
10
0
10
-1
10
-2
150
125
100
75
T
J(Max)
=150
O
C
T
C
=25
O
C
10us
100us
1us
1ms
10ms
Limit by Rdson
T
J(MAX)
=150
o
C
DC
50
25
T
C
=25
o
C
Single Pulse
0
10
0
10
1
10
2
10
3
0
25
50
75
100
125
150
T
(
o
C
)
C
V
DS
-Drain to Source Voltage(V)
Power Dissipation
Safe Operating Area
10
8
5
4
3
2
1
0
V
DS
=400V
I
D
=6A
6
4
2
0
0
5
10
15
20
25
30
35
40
0
100
200
300
400
Gate Charge Characteristics (nC)
V
DS
(V)
Gate Charge Characteristics
EOSS
Will Semiconductor Ltd.
5
2022/7/29- Rev.1.0
WCR190N65DV
In Descending Order
D=0.9,0.7,0.5, 0.3, 0.1, 0.05, 0.02, 0.01,0.005, single pluse
1
0.1
single pulse
0.01
1E-3
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
Square Wave Pulse Duration (s)
Transient Thermal Response (Junction-to-Case)
10
1
In Descending Order
D=0.9,0.7,0.5, 0.3, 0.1, 0.05, 0.02, 0.01,0.005, single pluse
0.1
0.01
1E-3
1E-4
1E-5
1E-6
single pulse
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Transient Thermal Response (Junction -to-Ambient)
Will Semiconductor Ltd.
6
2022/7/29- Rev.1.0
WCR190N65DV
PACKAGE OUTLINE DIMENSIONS
DFN8X8-4L
D
D2
1
b
e
TOP VIEW
BOTTOM VIEW
SIDE VIEW
Dimensions in Millimeters
Symbol
Min.
0.80
0.00
Typ.
0.85
0.02
0.20Ref.
1.00
8.00
8.00
7.20
4.35
2.00
2.75
0.50
–
Max.
0.90
0.05
A
A1
A3
b
0.90
7.90
1.10
8.10
8.10
7.30
4.45
2.10
2.85
0.60
–
D
E
7.90
D2
E2
e
7.10
4.25
1.90
K
2.65
L
0.40
R
0.20REF
RECOMMENDED LAND PATTERN (Unit: mm)
Will Semiconductor Ltd.
7
2022/7/29- Rev.1.0
WCR190N65DV
DFN8X8-4L
Notes:
This recommended land pattern is for reference purposes only. Please
consult your manufacturing group to ensure your PCB design guidelines
are met.
TAPE AND REEL INFORMATION
Will Semiconductor Ltd.
8
2022/7/29- Rev.1.0
WCR190N65DV
Reel Dimensions
Tape Dimensions
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1 Q2
Q3
Q1 Q2
Q3
Q4
Q4
User Direction of Feed
RD
W
Reel Dimension
Overall width of the carrier tape
7inch
8mm
2mm
Q1
13inch
12mm
4mm
Q2
16mm
8mm
P1
Pitch between successive cavity centers
Pin1 Quadrant
12mm
Q4
Pin1
Q3
Will Semiconductor Ltd.
9
2022/7/29- Rev.1.0
