WILLSEMI-Will-Semicon-WNM2016A-3-TR
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WNM2016A
WNM2016A
Single N-Channel, 20V, 4.7A,
Power MOSFET
V
DS
(V)
Typical R
DS(on)
(mΩ)
33@ V
GS
=4.5V
39@ V
GS
=3.1V
44@ V
GS
=2.5V
66@ V
GS
=1.8V
20
SOT-23
Description
D
3
The WNM2016A is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM2016A is Pb-free and
Halogen-free.
1
G
2
S
Pin configuration (Top view)
Features
Trench
T
e
chnology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23
NEYW
NE
Y
= Device Code
=
Y
e
ar
W
= Week(A~Z)
Marking
Applications
Order information
D
C/DC converters
Device
Package
Shipping
Power supply converters circuit
WNM2016A-3/TR
SOT-23
3000/
T
a
pe&Reel
Load/Power Switching for portable device
Will Semiconductor Ltd.
1
Nov,2019- Rev.1.0
WNM2016A
Absolute Maximum ratings
Parameter
Symbol
V
DS
Maximum
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
±12
T
A
=25°C
T
A
=70°C
4.7
Continuous Drain Current
Pulsed Drain Current
c
I
D
3.7
A
I
DM
P
D
24
T
A
=25°C
T
A
=70°C
1.4
Maximum Power Dissipation
b
W
0.9
Operating Junction
T
emperature
Storage
T
emperature Range
T
J
-55 to 150
-55 to 150
°C
°C
T
STG
Thermal resistance ratings
Single Operation
Parameter
Symbol
Typical
Maximum
Unit
t ≤ 10 s
72
98
42
90
122
54
Junction-to-Ambient Thermal Resistance
a
Junction-to-Lead Thermal Resistance
R
θJA
Steady State
Steady State
°C/W
R
θJ
L
Note:
a. The
value of R
θJA
is measured with the device mounted on 1-inch
2
(6.45cm
2
) with 2oz.(0.071mm thick) Copper pad on
a 1.5*1.5 inch
2
, 0.06-inch thick FR4 PCB, in a still air environment with T
A
=25°C. The value in any given application
is determined by the user’s specific board design
b. The
power dissipation P
D
is based on Junction-to-Ambient thermal resistance R
θJA
t
≤
10s value and the T
J(MAX)
=150°C .
c. Repetitive
rating, ~10us pulse width, duty cycle ~1%, keep initial T
J
=25°C, the maximum allowed junction temperature
of 150°C.
d. The
static characteristics are obtained using ~380us pulses, duty cycle ~1%.
Will Semiconductor Ltd.
2
Nov,2019- Rev.1.0
WNM2016A
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BV
DSS
I
DSS
V
GS
= 0
V
,
I
D
= 250uA
V
DS
=16
V
,
V
GS
= 0V
V
DS
= 0
V
,
V
GS
= ±12V
20
V
1
uA
nA
I
GSS
±100
V
GS(TH)
V
GS
= V
DS
, I
D
= 250uA
V
GS
= 4.5
V
,
I
D
= 4.7A
V
GS
= 3.1
V
,
I
D
= 3.5A
V
GS
= 2.5
V
,
I
D
= 2.5A
V
GS
= 1.8
V
,
I
D
= 2.0A
0.45 0.65
1.0
42
V
34
39
44
66
52
Drain-to-source On-resistance
R
DS(on)
mΩ
63
118
CHARGES, CAPACITANCES AND G
A
T
E RESISTANCE
Input Capacitance
C
ISS
247
53
V
GS
= 0
V
, f =
1
.0MHz,
V
DS
= 10 V
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
pF
nC
36
4.2
0.3
0.8
1.0
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
V
GS
= 4.5
V
,
V
DS
= 10
V
,
I
D
= 4.7A
Q
GD
td(ON)
5.3
12.6
25
tr
V
GS
=4.5
V
,
V
DS
= 10
V
,
R
L
=3.5Ω , R
G
=6Ω
ns
V
Turn-Off Delay Time
Fall Time
td(OFF)
tf
9.9
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
= 0
V
,
I
S
= 1A
0.7
1.2
Will Semiconductor Ltd.
3
Nov,2019- Rev.1.0
WNM2016A
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
4
V
V
V
V
t
GS
=
2
D
30
25
20
15
10
5
10
8
V
GS
=5V
V
DS
=2V
V
GS
=4V
6
V
GS
=2V
V
GS
=3V
T=150
o
C
T=25
o
C
4
V
GS
=1.5V
2
T=-50
o
C
0
0.0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.5
1.0
1.5
2.0
2.5
V
GS
-Gate to Source Voltage(V)
V
DS
-Drain-to-Source Voltage(V)
Output Characteristics
Transfer Characteristics
200
150
100
50
200
180
160
140
120
100
80
ID=4.7A
V
GS
=1.8V
V
GS
=2.5V
60
40
20
V
GS
=4.5V
V
GS
=3.1V
0
1.0
0
1.5
2.0
2.5
3.0
3.5
1
2
3
4
5
6
7
8
9
10
V
GS
-Gate to Source Voltage(V)
I
DS
-Drain to Source Current(A)
On-Resistance vs. Drain Current
On-Resistance vs. Gate-to-Source Voltage
1.2
1.6
1.4
1.2
1.0
0.8
0.6
I
D
=250uA
V
GS
=4.5V
I
D
=4.7A
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature (
o
C)
o
Temperature ( C)
On-Resistance vs. Junction Temperature
Will Semiconductor Ltd.
Threshold Voltage vs. Temperature
4
Nov,2019- Rev.1.0
WNM2016A
10
1
500
400
300
200
100
0
C
iss
T=150
o
C
0.1
T=25
o
C
0.01
C
oss
C
rss
T=-50
o
C
0.001
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
2
4
6
8
10
12
14
V
SD
-Source to Drain Voltage (V)
V
DS
-Source to Source Voltage(V)
Capacitance
Body Diode Forward Voltage
14
12
10
8
T
J(Max)
=150
o
C
T
A
=25
o
C
Limit by Rdson
10
1
100us
1ms
10ms
6
DC
100ms
1s
4
0.1
0.01
10s
T
J(MAX)
=150
o
C
T
A
=25
o
C
2
Single Pulse
0
0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Pulse Width(s)
V
DS
-Drain to Source Voltage(V)
Single Pulse power
Safe Operating Power
4.5
V
DS
=10V
I
D
=4.7A
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Gate Charge Characteristics
(nC)
Gate Charge Characteristics
Will Semiconductor Ltd.
5
Nov,2019- Rev.1.0
WNM2016A
10
1
In Descending Order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pluse
0.1
0.01
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Transient Thermal Response (Junction-to-Ambient)
Will Semiconductor Ltd.
6
Nov,2019- Rev.1.0
WNM2016A
PACKAGE OUTLINE DIMENSIONS
SOT-23
D
b
Ⅰ
1.
2.(N/A)
M
Ⅰ
e
c
e1
SIDE VIEW
TOP VIEW
0.80
0.80
SIDE VIEW
0.95
RECOMMENDED LAND PATTERN(unit:mm)
Dimensions in Millimeters
Symbol
Min.
0.89
0.00
0.30
0.05
2.70
1.15
2.10
Typ.
1.10
–
Max.
1.30
0.10
0.55
0.21
3.10
1.50
2.70
A
A1
b
0.43
–
c
D
2.90
1.33
2.40
0.95 Typ.
1.90
0.15
–
E
E1
e
e1
M
K
1.70
0.10
0.00
2.10
0.25
0.25
Will Semiconductor Ltd.
7
Nov,2019- Rev.1.0
WNM2016A
TAPE AND REEL INFORMATION
Reel Dimensions
Tape Dimensions
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1 Q2
Q1 Q2
Q3
User Direction of Feed
Q3
Q4
Q4
RD
W
Reel Dimension
7inch
8mm
2mm
Q1
13inch
Overall width of the carrier tape
Pitch between successive cavity centers
12mm
4mm
Q2
16mm
8mm
Q3
P1
Pin1 Pin1
Quadrant
Q4
Will Semiconductor Ltd.
8
Nov,2019- Rev.1.0
