WILLSEMI-Will-Semicon-WNM2077-3-TR
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WNM2077
WNM2077
Single N-Channel, 20V, 0.54A, Power MOSFET
V
DS
(V)
Rds(on) (
Ω
)
0.420@ V
GS
=4.5V
0.580@ V
GS
=2.5V
0.840@ V
GS
=1.8V
20
SOT-723
ESD Protected
Descriptions
D
The WNM2077 is N-Channel enhancement MOS
Field Effect
Transistor. Uses advanced trench
technology and design to provide excellent R
DS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product
WNM2077 is Pb-free.
G
S
Pin configuration (Top view)
Features
●
●
●
●
●
Trench
T
e
chnology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-723
NB
*
= Device
Code
= Month
(A~Z)
Marking
Applications
●
●
●
●
●
Driver for Relay, Solenoid, Motor, LED etc.
Order
information
DC-DC converter circuit
Power Switch
Load Switch
Device
WNM2077-3/TR
Package
Shipping
SOT-723
8000/Reel&
T
a
pe
Charging
Will Semiconductor Ltd.
1
Sep, 2015 – Rev.1.0
WNM2077
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Symbol
V
DS
10 S
Steady State
Unit
20
V
Gate-Source Voltage
V
GS
±10
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
0.54
0.43
0.36
0.23
0.49
0.39
0.29
0.18
0.51
0.41
0.31
0.20
0.44
0.35
0.23
0.14
Continuous Drain Current
ad
Maximum Power Dissipation
ad
Continuous Drain Current
bd
Maximum Power Dissipation
bd
I
D
P
D
I
D
A
W
A
P
D
W
c
Pulsed Drain Current
I
DM
T
J
0.9
150
260
A
Operating Junction
T
e
mperature
Lead
T
e
mperature
°C
°C
°C
T
L
Storage
T
e
mperature Range
T
stg
-55 to 150
Thermal resistance ratings
Parameter
Symbol
Typical
255
Maximum
345
Unit
t ≤ 10 s
Junction-to-Ambient Thermal Resistance
a
R
θ
JA
Steady State
t ≤ 10 s
325
395
°C/W
375
430
Junction-to-Ambient Thermal Resistance
b
Junction-to-Case Thermal Resistance
R
R
θ
JA
JC
Steady State
Steady State
445
535
220
300
θ
a
b
c
d
Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR-4 board using minimum pad size, 1oz copper
Pulse width<380μs, Duty Cycle<2%
Maximum junction temperature T
J
=150°C.
Will Semiconductor Ltd.
2
Sep, 2015 – Rev.1.0
WNM2077
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BV
DSS
I
DSS
I
GSS
V
GS
= 0
V
,
I
D
= 250uA
V
DS
= 16V, V
GS
= 0V
V
DS
= 0
V
, V
GS
= ±10V
20
V
1
uA
uA
±5
V
GS(TH)
g
FS
V
GS
= V
DS
, I
D
= 250uA
V
DS
= 10V, I
D
= 0.35A
V
GS
= 4.5
V
, I
D
= 0.35A
V
GS
= 3.1
V
,
I
D
= 0.20A
V
GS
= 2.5
V
, I
D
= 0.20A
V
GS
= 1.8
V
, I
D
= 0.20A
V
GS
= 1.5
V
, I
D
= 0.04A
0.45
0.70
0.85
420
1.0
V
S
Forward Transconductance
600
700
500
b, c
R
DS(on)
mΩ
Drain-to-source On-resistance
800
580
1300
1600
840
1100
CAPACITANCES, CHARGES
Input Capacitance
C
ISS
30
7
V
GS
= 0
V
,
f = 1MHz,
V
DS
= 10 V
Output Capacitance
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
pF
nC
Reverse Transfer Capacitance
T
o
tal Gate Charge
5
1.07
0.12
0.32
0.14
V
GS
= 4.5
V
,
V
DS
= 10
V
,
I
D
= 0.54A
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Q
GD
td(ON)
7.2
9.5
V
GS
= 4.5
V
,
V
DD
= 10
V
,
I
D
=0.54 A,
R
G
=6 Ω
Rise Time
tr
ns
V
Turn-Off Delay Time
td(OFF)
tf
19.6
4.6
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
= 0
V
, I
S
= 0.3A
0.85
1.5
Will Semiconductor Ltd.
3
Sep, 2015 – Rev.1.0
WNM2077
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
2.0
1.0
0.8
0.6
0.4
0.2
0.0
V
GS
=3.0V~4.5V
V
GS
=2.5V
V
DS
=1.0V
1.5
1.0
0.5
0.0
T= -50
o
C
T= 25
o
C
T= 150
o
C
V
GS
=2.0V
V
GS
=1.5V
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
-Drain-to-Source Voltage (V)
V
GS
-Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.0
2.0
1.5
1.0
0.5
0.0
V
GS
=1.8V
0.8
0.6
0.4
0.2
0.0
V
GS
=2.5V
V
GS
=3.1V
V
GS
=4.5V
0.2
0.4
0.6
0.8
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
I
DS
-Drain-to-Source Current (A)
V
GS
-Gate-to-Source Voltage (V)
On Resistance vs. Drain Current
On Resistance vs.
Gate-to-Source Voltage
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
1.3
V
GS
=4.5V,I
D
=0.54A
I
D
=250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature
(
o
C
)
Temperature
(
o
C
)
On Resistance vs. Junction Temperature
Threshold Voltage vs. Temperature
Will Semiconductor Ltd.
4
Sep, 2015 – Rev.1.0
WNM2077
60
50
40
30
20
10
0
0.8
0.6
0.4
0.2
0.0
V
GS
=0V
F=1MHz
T=150
o
C
C
iss
C
oss
C
rss
T=25
o
C
2
4
6
8
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
DS
-Drain Voltage (V)
V
SD
-Source-to-Drain Voltage (V)
Capacitance
Body Diode Forward Voltage
4
3
2
1
0
V
GS
=4.5V, V
DS
=10V, I
D
=0.54A
1
0.1
1ms
Limited by R
DS(on)
10ms
100ms
1s
10s
DC
0.01
1E-3
T
A
=25
o
C
Single Pulse
0.1
1
10
100
0.0
0.4
0.8
1.2
V
DS
-Drain-to-Source Voltage (V)
Qg (nc)
Gate Charge Characteristics
Safe Operating Power
Transient Thermal Response (Junction-to-Ambient)
Will Semiconductor Ltd.
5
Sep, 2015 – Rev.1.0
WNM2077
Package outline dimensions
SOT-723
Will Semiconductor Ltd.
6
Sep, 2015 – Rev.1.0
