WILLSEMI-Will-Semicon-WNM3003-3-TR
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WNM3003
WNM3003
N-Channel, 30V,
4.0
A, Power MOSFET
Rds(on)
V
(BR)DSS
(
)
0.033@ 10V
30V
0.033@ 10V
0.043 @ 4.5V
SOT-23
D
3
Descriptions
The WNM3003 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench technology
and design to provide excellent R
DS (ON)
with low gate
charge. This device is suitable for use in DC-DC
conversion and power switch applications. Standard
Product WNM3003 is Pb-free.
2
S
1
G
Configuration (Top View)
Features
z
z
z
z
z
Trench
T
e
chnology
WT3*
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-23
WT3
*
= Device Code
= Month (A~Z)
Marking
Applications
Order Information
Device
WNM3003-3/TR
Package
SOT-23
Shipping
3000/
T
a
pe&Reel
z
z
z
z
z
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Dec,
2011 – Rev.1.
Will Semiconductor Ltd.
1
1
WNM3003
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Symbol
DS
ꢀ
10 S
Steady State
30
Unit
V
V
20
Gate-Source Voltage
V
GS
4.0
3.2
0.8
0.5
3.7
2.9
0.7
0.4
3.7
3.0
0.7
0.4
3.4
2.7
0.6
0.3
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Continuous Drain Current
a
Maximum Power Dissipation
a
Continuous Drain Current
b
Maximum Power Dissipation
b
I
D
A
W
A
P
D
I
D
P
D
W
Pulsed Drain Current
c
I
DM
T
J
A
10
150
Operating Junction
T
e
mperature
Lead
T
e
mperature
°C
°C
°C
260
T
L
-55 to 150
Storage
T
e
mperature Range
T
stg
Thermal resistance ratings
Parameter
Symbol
Typical
120
Maximum
145
Unit
t
10 s
Junction-to-Ambient Thermal Resistance
a
R
ș
JA
132
168
Steady State
t
10 s
145
174
°C/W
Junction-to-Ambient Thermal Resistance
b
Junction-to-Case Thermal Resistance
R
ș
JA
R
ș
JC
158
202
Steady State
Steady State
60
75
a
b
c
d
Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR4 board using minimum pad size, 1oz copper
Repetitive rating, pulse width limited by junction temperature, t
p
=10μs, Duty Cycle=1%
Repetitive rating, pulse width limited by junction temperature T
J
=150°C.
Dec,
2011 – Rev.1.
Will Semiconductor Ltd.
2
1
WNM3003
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BV
DSS
I
DSS
I
GSS
V
GS
= 0
V
,
I
D
= 250uA
30
V
V
DS
=24 V,
V
GS
= 0V
1
uA
V
DS
= 0
V
, V
GS
= 20V
100
nA
V
GS(TH)
R
DS(on)
g
FS
V
GS
= V
DS
, I
D
= 250uA
V
GS
= 10
V
, I
D
= 3.1A
V
GS
= 10
V
, I
D
= 2.5A
V
GS
= 4.5
V
, I
D
= 2.0A
V
DS
= 4.5
V
,
I
D
= 2.8A
1.0
1.6
33
3.0
47
47
59
V
m
S
Drain-to-source On-resistance
33
43
Forward Transconductance
5.8
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
570
72
V
GS
= 0
V
, f =
1
.0 MHz, V
DS
=
pF
nC
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
15 V
64
11.6
0.8
1.25
3.0
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
V
GS
=10
V
, V
DS
=15
V
,
I
D
= 3.1A
Q
GD
td(ON)
5
tr
V
GS
= 10
V
, V
DS
= 15
V
,
3.3
39
4.4
ns
V
I
D
=1A, R
G
=6
Turn-Off Delay Time
Fall Time
td(OFF)
tf
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
= 0
V
,
I
S
= 1.5A
0.50
0.84
1.50
Dec,
2011 – Rev.1.
Will Semiconductor Ltd.
3
1
WNM3003
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
20
15
-50
0
C
25
0
C
V
DS
=5V
15
10
5
125
0
C
10
5
V
GS
=2V
V
GS
=3V
V
GS
=4V
V
GS
=4.5V
V
GS
=10V
0
0
0
1
2
3
4
0
1
2
3
4
5
V
DS
-Drain-to-Source Voltage(V)
V
GS
-Gate-to-Source Voltage(V)
Output characteristics
Transfer characteristics
60
50
40
30
20
10
0
100
80
60
40
20
I
D
=3.1A
V
GS
=4.5V
V
GS
=10V
2
4
6
8
10
2
4
6
8
10
V
GS
-Gate-to-Source Voltage(V)
I
DS
-Drain-to-Source Current(A)
On-Resistance vs. Drain current
On-Resistance vs. Gate-to-Source voltage
60
2.0
I
DS
=250uA
V
GS
=10V I
D
=3.1A
50
40
30
20
10
1.8
1.6
1.4
1.2
1.0
-50
0
50
100
150
-50 -25
0
25
50
75 100
125 150
Temperature(
0
C)
Temperature(
0
C)
On-Resistance vs. Junction temperature
Threshold voltage vs. Temperature
Dec,
Will Semiconductor Ltd.
4
2011 – Rev.1.
1
WNM3003
1000
800
600
400
200
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
C
iss
C
oss
C
rss
V
GS
=0,f=1MHZ
25
0
C
150
0
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
4
8
12
16
20
V
DS
Drain-to-Source Voltage (V)
V
sd
-Source-to-Drain Voltage(V)
Capacitance
Body diode forward voltage
100
10
1
12
Limited by R
DS(on)
10
8
6
4
2
100 μs
T
A
= 25
_
C
1 ms
10 ms
100 ms
0.1
1 s, 10 s
DC
BVDSS Limited
10
T
A
= 25 °C
Single Pulse
0.01
0
0.1
1
100
0.01
0.1
1
10
100
600
V
– Drain-to-Source Voltage (V)
DS
Time (sec)
Safe operating
area
Single pulse power
14
12
10
8
V
DS
=15V,I
D
=3.1A
6
4
2
0
0
3
6
9
12
15
Q
g
( nC)
Gate Charge Characteristics
Dec,
Will Semiconductor Ltd.
5
2011 – Rev.1.
1
WNM3003
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 132
_
C/W
thJA
(t)
3. T
ï
T =
P
Z
JM DM
thJA
A
Single Pulse
4. Surface Mounted
0.01
ï
4
ï
3
ï
2
ï
1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Transient thermal response (Junction-to-Ambient)
Dec,
2011 – Rev.1.
Will Semiconductor Ltd.
6
1
WNM3003
Package Outline Dimension
SOT-23
Dimensions In Millimeters
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
c
D
E
E1
e
e1
L
0.950 (Typ.)
0.550 (Typ.)
1.800
2.000
L1
0.300
0
o
0.500
8
o
ș
Dec,
2011 – Rev.1.
Will Semiconductor
7
1
