WILLSEMI-Will-Semicon-WPM2005B-8-TR
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WPM200
5B
WPM2005B
Power MOSFET and Schottky Diode
Features
DFN3×2-8L
zꢀ
Featuring a MOSFET and Schottky Diode
zꢀ
Independent Pinout to each Device to Ease Circuit Design
zꢀ
Ultra Low V
F
Schottky
Applications
zꢀ
Li–Ion Battery Charging
zꢀ
High Side DC-DC Conversion Circuits
zꢀ
High Side Drive for Small Brushless DC Motors
zꢀ
Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS
(T
J
= 25
ć
unless otherwise noted)
Parameter
Symbol
Value
Units
pin connections:
Drain-Source voltage
V
DSS
V
GS
I
D
-20
f
8
V
V
1
2
8
Gate-Source Voltage
A
A
S
G
C
C
D
D
7
6
Continuous Drain Current
Drain Current-Pulsed
-2.
7
A
A
I
DM
P
D
-10
3
4
5
Power Dissi
pation
1.1
W
Junction Temperature
T
J
150
ć
Marking:
Storage Temperature
T
stg
-55~150
110
ć
Thermal Resistance, Junction-to-Ambient
R
Ԧ
JA
ć
/W
SCHOTTKY DIODE MAXIMUM RATINGS
(T
J
= 25
ć
unless otherwise noted)
Parameter
Symbol
V
RRM
V
R
Limits
20
Unit
V
J =
Specific Device Code
A = Date Code
Peak repetitive reverse voltage
.
DC Blocking voltage
20
V
Average rectified forward current
I
F
1
A
Order information
Part
ꢀ
Number
ꢀ
Package
ꢀ
Shipping
ꢀ ꢀ
3000
ꢀ
Tape
ꢀ
&
ꢀ
Reel
ꢀ
WPM2005B
Ͳ
8/TR
ꢀ
DFN3*2- 8
ꢀ
L
Jan,
0
Page 1
20
15
Rev 1.5
WPM2005
B
MOSFET ELECTRICAL CHARACTERISTICS
(Tamb=25
ć
unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
BV
DSS
I
DSS
I
GSS
V
GS
= 0V,I
D
= -250
ȝ
A
V
DS
=-16V,V
GS
= 0V
V
GS
=
f
8V, V
DS
= 0V
-20
V
ȝ
A
nA
-1
f
100
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
V
GS(th)
R
DS(on)
g
FS
V
GS
= V
DS
, I
D
=-250
ȝ
A
V
GS
= -4.5V, I
D
= -2.
7
A
V
GS
= -2.5V,I
D
= –
2.2
A
V
DS
= -10V, I
D
= –
2
.7A
-0.45
V
m
ȍ
m
ȍ
S
-0.81
125
160
7
.0
C
iss
C
oss
C
rss
300
150
50
pF
pF
pF
V
DS
= -10V, V
GS
= 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
t
d(on)
t
r
t
d(off)
t
f
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
25
45
45
40
6.
5
ns
ns
ns
ns
nC
nC
nC
nC
V
GS
= -4.5V, V
DD
= -1
0
V,
I
D
= –
1.0
A, R
G
=
6.0
ȍ
,
Total Gate Charge
3.0
0.2
1.4
0.
7
Threshold gate charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= -10V,I
D
= –
2.7
A,
V
GS
=-4.5V
Drain-Source Diode Characteristics and Maximun Ratings
Forward Diode Voltage
V
SD
V
GS
= 0V,I
S
= –
0.9
A
-1.5
V
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
(TJ = 25
e
C unless otherwise noted)
Parameter
Symbol
V
F1
Min.
Typ.
0.425
0.480
Max.
Unit
Conditions
I
F
=0.1A
I
F
=0.5A
I
F
=0.6A
V
R
=10V
V
R
=20V
Forward voltage
V
V
F2
V
F3
0.575
20
100
Reverse current
I
R1
ȝ
A
ȝ
A
I
R2
Welding temperature curve
MSL=1
Jan,
0
20
15
Rev 1.5
Page 2
WPM2005
B
(T =
25
°
C unless otherwise noted)
J
Typical Characteristics
Output Characteristics
Transfer Characteristics
=
–
–
55
_
C
10
10
V
GS
= 5 thru 3 V
T
C
2.5 V
8
8
25
_
C
6
6
125
_
C
2 V
4
4
2
2
1.5 V
0
0
0.0
0.5
1.0
DS
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
—
D
rain-to-Source
Voltage (V)
V
—
G
ate-to-Source
Voltage (V)
GS
On-Resistance vs. Drain Current
Capacitance
0.6
0.5
0.4
0.3
0.2
0.1
0.0
800
V
GS
= 1.8 V
C
iss
600
400
200
0
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
0
2
4
6
8
10
0
4
8
12
16
20
I
D
—
D
rain
Current (A)
V
DS
—
D
rain-to-Source
Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
GS
= 4.5 V
DS
I
= 2.7 A
I =
2.7 A
D
0
1
2
3
4
5
–
–
50
–
–
25
0
25
50
75
100 125 150
Q
—
T
otal
Gate Charge (nC)
T
—
J
unction
T
emperature (
_
C)
g
J
Jan,
0
20
15
Rev 1.5
Page 3
WPM2005
B
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.3
0.2
0.1
0.0
10
I
D
= 2.7 A
T
= 150
_
C
J
T
= 25
_
C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
—
S
ource-to-Drain
Voltage (V)
V
GS
—
G
ate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.4
0.3
50
40
30
I
D
= 250
m
A
0.2
0.1
20
10
0
0.0
— 0 . 1
— 0 . 2
–
– 4
–
– 3
–
– 2
–
– 1
–
–
50
–
–
25
0
25
50
75
100 125 150
10
10
10
10
1
10
100 600
T
—
T
emperature (
_
C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
0.02
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 90
_
C/W
thJA
(t)
3. T
–
– T
= P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–
– 4
–
– 3
–
– 2
–
– 1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Page 4
Jan,
0
20
15
Rev 1.5
WPM2005
B
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–
– 4
–
– 3
–
– 2
–
– 1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Reverse Current vs. Junction Temperature
Forward Voltage Drop
20
10
5
1
T
= 150
_
C
J
1
0.1
20 V
T
= 25
_
C
J
0.01
10 V
0.001
0.0001
0.1
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
T
—
J
unction
T
emperature (
_
C)
V
F
—
F
orward
Voltage Drop (V)
J
Capacitance
150
120
90
60
30
0
0
4
8
12
16
20
V
KA
—
R
everse
Voltage (V
)
Page 5
Jan,
0
20
15
Rev 1.5
WPM200
5B
DFNWB3X2-8L(P0.65T0.75/0.85) PACKAGE
OUTLINE DIMENSIONS
Page 6
Jan,
0
20
15
Rev 1.5
