WILLSEMI-Will-Semicon-WPM2006-6-TR
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WPM2006
WPM2006
Power MOSFET and Schottky Diode
Features
zꢀ
Featuring a MOSFET and Schottky Diode
zꢀ
Independent Pinout to each Device to Ease Circuit Design
zꢀ
Ultra Low V
F
Schottky
DFN
2*
2
–
6
L
Applications
zꢀ
Li–Ion Battery Charging
zꢀ
High Side DC-DC Conversion Circuits
zꢀ
High Side Drive for Small Brushless DC Motors
zꢀ
Power Management in Portable, Battery Powered Products
1
MOSFET MAXIMUM RATINGS
(T
J
= 25
ć
unless otherwise noted)
Parameter
D
rain
Ŧ
to
Ŧ
S
ource Voltage
Symbol
Value
Ŧ
2
0
8.0
Unit
V
V
DSS
G
ate
Ŧ
to
Ŧ
S
ource Voltage
V
V
GS
P
in connections:
C
ontinuous
D
rain
C
urrent (
N
ote
1
)
I
A
T =
25
°
C
Ŧ
3
D
A
S
teady
S
tate
T =
8
5
°
C
A
Ŧ
2
.
3
Ŧ
4
.
1
K
t
≤
5
s T
=
25
°
C
A
A
N/C
D
K
G
S
1
6
5
4
Power
D
issipation
(
N
ote
1
)
P
W
S
teady
S
tate
D
D
1
.
45
T =
25
°
C
A
2
3
t
≤
5
s
2
.
3
Ŧ
2
.0
Ŧ
1
.
5
D
C
ontinuous
D
rain
C
urrent (
N
ote
2
)
I
A
T =
25
°
C
A
D
T =
8
5
°
C
A
S
teady
S
tate
Power
D
issipation
(
N
ote
2
)
P
W
T =
25
°
C
A
0.7
Pulsed
D
rain
C
urrent
t =
1
0
m
s
p
I
Ŧ
2
0
A
D
M
Operating Junction and
S
torage
T
e
mperature
T , T
Ŧ
55
to
15
0
°
C
J
S
T
G
Marking:
S
ource
C
urrent (Body
D
iode) (
N
ote
2
)
I
Ŧ
2
A
S
1
.
S
urface Mounted on FR
4
Board using
1
in sq pad size,
2
oz
C
u.
2
.
S
urface Mounted on FR
4
Board using minimum pad size,
2
oz
C
u.
SCHOTTKY DIODE MAXIMUM RATINGS
(T
J
= 25
ć
unless otherwise noted)
Parameter
Symbol
V
RRM
V
R
Limits
20
Unit
V
J = Specific Device Code
YWW = Date Code
Peak repetitive reverse voltage
.
DC Blocking voltage
20
V
Average rectified forward current
I
F
1
A
Order information
Part
ꢀ
N
ꢀ
umber
Package
ꢀ
ꢀ
ꢀ
Shipping
3000
ꢀ
Tape
ꢀ
&
ꢀ
Reel
ꢀ
WPM2006
Ͳ
6/TR
ꢀ
DFN
ꢀ
2*2
–
ꢀ
6L
Page 1
Dec,
0
20
11
Rev 2.1
WPM2006
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
86
Unit
Junction
Ŧ
to
Ŧ
A
mbient –
S
teady
S
tate (
N
ote
3
)
Junction
Ŧ
to
Ŧ
A
mbient – t
≤
5
s (
N
ote
3
)
R
q
J
A
R
q
J
A
54
°
C/
W
Junction
Ŧ
to
Ŧ
A
mbient –
S
teady
S
tate Min Pad (
N
ote
4
)
R
q
J
A
1
7
5
3
.
S
urface Mounted on FR
4
Board using
1
in sq pad size,
2
oz
C
u.
4
.
S
urface Mounted on FR
4
Board using the minimum pad size,
2
oz
C
u.
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
=25
ć
unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
BV
DSS
I
DSS
I
GSS
V
GS
= 0V,I
D
= -250
ȝ
A
V
DS
=-16V,V
GS
= 0V
V
GS
=
f
8
V
, V
DS
= 0V
-20
V
ȝ
A
nA
-1
f
100
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
V
GS(th)
R
DS(on)
g
FS
V
GS
= V
DS
, I
D
=-250
ȝ
A
V
GS
= -4.5V, I
D
= -2.
8
A
V
GS
= -2.5V,I
D
= –
2.0
A
V
DS
= -10V, I
D
= –
2
.7A
–
0
.4
-0.6
90
110
7
.0
V
m
ȍ
m
ȍ
S
-1
120
150
C
iss
C
oss
C
rss
pF
pF
pF
480
46
10
V
DS
= -15V, V
GS
= 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
t
d(on)
t
r
t
d(off)
t
f
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
38
25
43
5
7.2
1.0
2.2
1.2
ns
ns
ns
ns
nC
nC
nC
nC
V
GS
= -4.5V, V
DS
=
–
6
V,
R
L
=
6
ȍ
,R
G
=
6
ȍ
,
Total Gate Charge
Threshold gate charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= -6V,I
D
=
–
2.8
A,
V
GS
=-4.5V
Drain-Source Diode Characteristics and Maximun Ratings
Forward Diode Voltage
V
SD
V
GS
= 0V,I
S
=
–
1
A
-0.7
-1.5
V
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
(TJ = 25
e
C unless otherwise noted)
Parameter
Symbol
V
F1
Min.
Typ.
0.425
0.480
Max.
Unit
Conditions
I
F
=0.1A
I
F
=0.5A
I
F
=1A
V
R
=10V
V
R
=20V
Forward voltage
V
V
F2
V
F3
0.575
20
100
Reverse current
I
R1
ȝ
A
ȝ
A
I
R2
Page 2
Dec,
0
20
11
Rev 2.1
WPM2006
(T =
25
°
C
unless otherwise noted)
J
Typical Characteristics
4
3
2
4
T =
25
°
C
V
=
Ŧ
6
V to
Ŧ
3
V
=
Ŧ
2
.
4
V
J
GS
V
DS
≥
Ŧ
1
0 V
Ŧ
2
V
V
GS
Ŧ
2
.
2
V
3
Ŧ
1
.8 V
Ŧ
1
.
6
V
2
1
0
1
00
°
C
1
Ŧ
1
.
4
V
Ŧ
1
.
2
V
25
°
C
T
C
=
Ŧ
55
°
C
0
0
1
2
3
4
5
6
7
8
0.
5
1
1
.
5
2
2
.
5
3
Ŧ
V ,
GA
TE
Ŧ
TO
Ŧ
S
OUR
C
E VOLT
AG
E (VOLT
S
)
GS
Ŧ
V ,
D
R
A
I
N
Ŧ
TO
Ŧ
S
OUR
C
E VOLT
AG
E (VOLT
S
)
DS
Figure 1. On
Ŧ
Region Characteristics
Figure 2. Transfer Characteristics
0.
5
0.
14
T =
25
°
C
J
I
D
=
Ŧ
2
.
1 A
T =
25
°
C
J
0.
13
0.
12
0.
11
0.
1
0
0.09
0.08
0.
4
0.
3
0.
2
V
GS
=
Ŧ
2
.
5
V
V
GS
=
Ŧ
4
.
5
V
0.
1
0
0.
5
1
.
5
2
.
5
3
.
5
1
2
3
4
5
6
Ŧ
V ,
GA
TE
Ŧ
TO
Ŧ
S
OUR
C
E VOLT
AG
E (VOLT
S
)
GS
Ŧ
I
D
R
A
I
N C
URRE
N
T (
A
MP
S
)
D
,
Figure 4. On
Ŧ
Resistance vs.
D
rain Current and
Gate Voltage
Figure 3. On
Ŧ
Resistance vs. Gate
Ŧ
to
Ŧ
Source
Voltage
1
.
6
1
.
4
1
.
2
1
1
0000
I
V
=
Ŧ
2
.
1 A
V
GS
= 0 V
D
=
Ŧ
4
.
5
V
GS
T =
15
0
°
C
J
1
000
1
00
1
0
T =
1
00
°
C
J
0.8
0.
6
Ŧ
5
0
Ŧ
25
0
25
5
0
7
5
1
00
125 15
0
2
4
6
8
1
0
12
14
16
1
8
2
0
Ŧ
T , JU
NC
TIO
N
TEMPER
A
TURE (
°
C
)
J
Ŧ
V ,
D
R
A
I
N
Ŧ
TO
Ŧ
S
OUR
C
E VOLT
AG
E (VOLT
S
)
DS
Figure 5. On
Ŧ
Resistance Variation with
Temperature
Figure 6.
D
rain
Ŧ
to
Ŧ
Source Leakage Current
vs. Voltage
Page 3
Dec,
0
20
11
Rev 2.1
WPM2006
5
4
3
2
1
0
15
12
9
6
00
5
00
4
00
3
00
2
00
V
= 0 V
V
GS
= 0 V
T =
25
°
C
J
DS
Ŧ
V
GS
C
I
SS
C
R
SS
6
3
C
I
D
=
Ŧ
2
.8
A
1
00
O
SS
T =
25
°
C
J
0
0
0
2
4
6
8
1
0
5
0
5
1
0
15
2
0
Ŧ
V
GS
Ŧ
V
DS
GA
TE
Ŧ
TO
Ŧ
S
OUR
C
E OR
D
R
A
I
N
Ŧ
TO
Ŧ
S
OUR
C
E VOLT
AG
E (V)
Q ,
TOT
A
L
GA
TE
C
H
A
R
G
E (n
C
)
G
Figure 7. Capacitance Variation
Figure 8. Gate
Ŧ
to
Ŧ
Source and
D
rain
Ŧ
to
Ŧ
Source Voltage vs. Total Charge
1
000
1
00
1
0
2
.
5
2
V
= 0 V
GS
V
=
Ŧ
16
V
=
Ŧ
2
.
1 A
=
Ŧ
4
.
5
V
DD
T =
25
°
C
J
I
D
V
GS
1
.
5
1
t
d(OFF)
t
t
f
r
t
d(O
N
)
0.
5
1
0
0.
3
1
1
0
R ,
GA
TE RE
S
I
S
T
ANC
E (
W
)
1
00
0.
5
0.7
0.9
Ŧ
V ,
S
OUR
C
E
Ŧ
TO
Ŧ
D
R
A
I
N
VOLT
AG
E (V)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10.
D
iode Forward Voltage vs. Current
1.0
D = 0.5
0.2
0.1
0.1
Normalized to
q
ja at 10s.
0.05
0.0175
W
0.0710
W
0.2706
W
0.5776
W
0.7086
W
Chip
0.02
0.01
0.0154 F
0.0854 F
0.3074 F
1.7891 F
107.55 F
SINGLE PULSE
Ambient
0.01
1.0E−03
1.0E−02
1.0E−01
1.0E+00
t, TIME (s)
1.0E+01
1.0E+02
1.0E+03
Figure 11. Thermal Response
Page 4
Dec,
0
20
11
Rev 2.1
WPM2006
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–
– 4
–
– 3
–
– 2
–
– 1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Reverse Current vs. Junction Temperature
Forward Voltage Drop
20
10
5
1
T
= 150
_
C
J
1
0.1
20 V
T
= 25
_
C
J
0.01
10 V
0.001
0.0001
0.1
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
T
—
J
unction
T
emperature (
_
C)
V
F
—
F
orward
Voltage Drop (V)
J
Capacitance
150
120
90
60
30
0
0
4
8
12
16
20
V
KA
—
R
everse
Voltage (V
)
Page 5
Dec,
0
20
11
Rev 2.1
WPM2006
Power Dissipation Characteristics
1. The
package of WPM2006 is DFN2x2-6L, surface mounted on FR4 Board using 1 in sq pad size
ˈ
2 oz Cu
ˈ
R
ș
JA is 84
ć
/W,
surface mounted on FR4 Board using minimum pad size
ˈ
2 oz Cu
ˈ
R
ș
JA is 17
ꢀ
ć
/W.
2. The
power dissipation PD is based on TJ(MAX)=150°C, and the relation between TJ
and Pd is TJ = Ta + R
ș
JA* PD , the
maximum power dissipation is determined by R
ș
JA .
3. The
R
ș
JA is the thermal impedance from junction to ambient, using larger PCB pad size can get smaller R
ș
JA and result in
larger maximum power dissipation.
84
ć
/W when mounted on
175
ć
/W when mounted on
a 1 in
2
pad of 2 oz copper
a minimum pad of 2 oz copper
Page 6
Dec,
0
20
11
Rev 2.1
WPM2006
Top View
Bottom View
Side View
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.700
0.000
Max.
0.800
0.050
Min.
0.028
0.000
Max.
0.031
0.002
A
A1
A3
D
E
D1
E1
k
b
e
L
0.203REF.
0.008REF.
1.924
1.924
0.520
0.900
2.076
2.076
0.720
1.100
0.076
0.076
0.020
0.035
0.082
0.082
0.028
0.043
0.200MIN.
0.008MIN.
0.026TYP.
0.250
0.174
0.350
0.326
0.010
0.007
0.014
0.013
0.650TYP.
Page
7
Dec,
0
20
11
Rev 2.1
WPM2006
DFN
2*2- 6L
PCB Layout Guide
2
.
3
0
0.
35
0.
43
1
0.
65
PIT
C
H
0.
25
0.7
2
1
.0
5
D
IME
NS
IO
NS:
MILLIMETER
S
Page
8
Dec,
0
20
11
Rev 2.1
