WILLSEMI-Will-Semicon-WPM2019-3-TR
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WPM2019
WPM2019
Single P-Channel, -20
V
,
–
0.73A, Power MOSFET
V
DS
(V)
Rds(on) (
ȍ
)
D
0.480@ V
GS
=
̢
4.5V
0.620@ V
GS
=
̢
2.5V
0.780@ V
GS
=
̢
1.8V
-20
S
G
SOT-523
Descriptions
The WPM2019 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM2019 is Pb-free and
Halogen-free.
D
3
1
2
G
S
Features
Pin configuration (Top view)
z
z
z
z
z
Trench
T
e
chnology
3
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-523
P9*
1
2
P9 =Device
Code
= Month(A~Z)
*
Applications
Marking
z
z
z
z
z
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Order information
Device
Package
Shipping
WPM2019-3/TR
SOT-523
3000/Reel&
T
a
pe
Charging
Will Semiconductor Ltd.
1
2015/08/25 – Rev. 1.4
WPM2019
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Symbol
V
DS
10 S
Steady State
-20
5
Unit
V
Gate-Source Voltage
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
-0.73
-0.58
0.38
0.24
-0.61
-0.49
0.27
0.17
-0.62
-0.50
0.28
0.18
-0.55
-0.44
0.22
0.14
Continuous Drain Current
a
Maximum Power Dissipation
a
Continuous Drain Current
b
Maximum Power Dissipation
b
I
D
P
D
I
D
A
W
A
P
D
W
Pulsed Drain Current
c
I
DM
T
J
-1.2
150
260
A
Operating Junction
T
e
mperature
Lead
T
e
mperature
°C
°C
°C
T
L
-55 to 150
Storage
T
e
mperature Range
T
stg
Thermal resistance ratings
Parameter
Symbol
Typical
285
Maximum
325
Unit
t
10 s
Junction-to-Ambient Thermal Resistance
a
R
ș
JA
355
440
Steady State
t
10 s
395
460
°C/W
Junction-to-Ambient Thermal Resistance
b
Junction-to-Case Thermal Resistance
R
ș
JA
R
ș
JC
465
560
Steady State
Steady State
280
320
a
b
c
d
Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR4 board using minimum pad size, 1oz copper
Repetitive rating, pulse width limited by junction temperature, t
p
=10μs, Duty Cycle=1%
Repetitive rating, pulse width limited by junction temperature T
J
=150°C.
Will Semiconductor Ltd.
2
2015/08/25 – Rev. 1.4
WPM2019
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BV
DSS
I
DSS
I
GSS
V
GS
= 0
V
, I
D
= -250uA
V
DS
=-16
V
, V
GS
= 0V
V
DS
= 0
V
, V
GS
= 5V
-20
V
uA
uA
-1
-5
ꢀ
V
GS(TH)
V
GS
= V
DS
, I
D
= -250uA
V
GS
= -4.5
V
, I
D
= -0.45A
V
GS
= -2.5
V
, I
D
= -0.35A
V
GS
= -1.8
V
, I
D
= -0.25A
V
DS
= -5
V
, I
D
=-0.45A
-0.40
-0.65
480
-0.90
810
V
m
S
R
DS(on)
620
1050
1300
Drain-to-source On-resistance
Forward Transconductance
780
g
FS
1.25
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
74.5
10.8
10.2
1.8
V
GS
= 0
V
, f =
1
00KHz, V
DS
-10 V
=
pF
nC
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
V
GS
= -4.5
V
, V
DS
= -10
V
,
I
D
= -0.45A
0.12
0.18
0.74
Q
GD
td(ON)
45
tr
V
GS
= -4.5
V
, V
DS
= -10
V
,
140
ns
V
R
G
=6
Turn-Off Delay Time
Fall Time
td(OFF)
tf
1500
2100
I
D
=-0.45A,
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
= 0
V
, I
S
= -0.15A
-0.50
-0.65
-1.50
Will Semiconductor Ltd.
3
2015/08/25 – Rev. 1.4
WPM2019
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
2.0
1.5
1.0
0.5
0.0
1500
1200
900
600
300
0
V
GS
= -2.5 ~ -5V
V
GS
= -2.0V
V
DS
= -5V
T=-50
0
C
V
GS
= -1.5V
T=25
0
C
T=125
0
C
0.0
0.3
0.6
0.9
1.2
1.5
1.8
0
1
2
3
4
5
-V
DS
_Drain to Source Voltage (V)
-V
GS
– Gate to Drain Voltage (V)
Output characteristics
Transfer characteristics
1400
1200
1000
800
1000
800
600
400
200
I
DS
=-0.45A
V
GS
=-2.5V
V
GS
=-4.5V
600
400
200
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.2
0.4
0.6
0.8
1.0
-V
G
S
-Gate to Source Voltage(V)
I
D
S
-Drain to Source Current (A)
On-Resistance vs. Gate-to-Source voltage
On-Resistance vs. Drain current
700
0.6
V
GS
=-4.5V I
DS
=-0.45A
I
DS
= -250uA
600
500
400
300
0.5
0.4
0.3
-50
0
50
100
150
-25
0
25
50
75
100
125
150
Temperature (
0
C)
Temperature (
0
C)
On-Resistance vs. Junction temperature
Threshold voltage vs. Temperature
Will Semiconductor Ltd.
4
2015/08/25 – Rev. 1.4
WPM2019
250
200
150
100
50
120
90
60
30
0
V
GS
=0
f=100KHZ
T=125
0
C
T=25
0
C
Cin
Cout
Crss
0.4
0.5
0.6
0.7
0.8
0.9
0
2
4
6
8
10
-V
SD
– Source to Drain Voltage(V)
-V
DS
– Drain to Source Voltage (V)
Capacitance
Body diode forward voltage
10.00
1.00
0.10
0.01
14
12
10
8
T
J(Max)
=150°C, T
A
=25°C
T
J(Max)
=150°C
T
A
=25°C
100
μ
s
6
1ms
R
DS(ON)
limited
4
2
10s
0
0.0001 0.001
0.01
0.1
1
10
100
0.1
1
10
100
Pulse Width (s)
-V
DS
(Volts)
Single pulse power
Safe operating power
10
1
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
θ
JA
=440°C/W
R
P
D
0.1
T
on
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
100
1000
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd.
5
2015/08/25 – Rev. 1.4
WPM2019
Package outline dimensions
SOT-523
Dimensions in millimeter
Symbol
Min.
0.700
0.000
0.700
0.150
0.250
0.100
1.500
0.700
1.450
Typ.
0.800
Max.
A
A1
A2
b1
b2
c
0.900
0.100
0.800
0.250
0.350
0.200
1.700
0.900
1.750
0.050
0.750
0.200
0.300
0.150
D
1.600
0.800
E
E1
e
1.600
0.500TYP
1.000
e1
L
0.900
1.100
0.400REF
L1
©
0.260
0.460
0
e
8
e
Will Semiconductor Ltd.
6
2015/08/25 – Rev. 1.4
