WILLSEMI-Will-Semicon-WPM3020-3-TR
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WPM3020
WPM3020
Single P-Channel, -30
V
,
–
3.8A, Power MOSFET
V
DS
(V)
Typical R
DS(on)
(m
Ω
)
D
43 @ V
GS
=-10V
48 @ V
GS
=-4.5V
-30
S
G
SOT-23
Descriptions
D
3
The WPM3020 is P-Channel
enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM3020 is Pb-free.
1
G
2
S
Pin configuration (Top view)
Features
Trench
T
e
chnology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23
PA
Y
= Device Code
=
Y
e
ar
W
= Week(A~z)
Applications
Marking
DC/DC converters
Order information
Power supply converters circuit
Device
WPM3020-3/TR
Package
Shipping
Load/Power Switching for portable device
SOT-23
3000/
T
a
pe&Reel
Will Semiconductor Ltd.
1
2017/05/04- Rev.1.0
WPM3020
Absolute Maximum ratings
Parameter
Symbol
V
DS
10 s
Steady State
Unit
-30
Drain-Source Voltage
Gate-Source Voltage
V
±12
V
GS
-3.8
-3.0
1.2
-3.2
-2.5
0.9
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Continuous Drain Current
a d
Maximum Power Dissipation
a d
Continuous Drain Current
b d
Maximum Power Dissipation
b d
I
D
P
D
I
D
A
W
A
0.8
0.5
-3.0
-2.4
0.8
-2.8
-2.2
0.7
P
D
W
0.5
0.4
Pulsed Drain Current
c
I
DM
T
J
A
-15
-55 to 150
260
Operating Junction
T
e
mperature
Lead
T
e
mperature
°C
°C
°C
T
L
-55 to 150
Storage
T
e
mperature Range
T
stg
Thermal resistance ratings
Single Operation
Parameter
Symbol
Typical
84
Maximum
102
Unit
t
≤
10 s
Junction-to-Ambient Thermal Resistance
a
R
θ
JA
120
145
Steady State
t
≤
10 s
130
160
°C/W
Junction-to-Ambient Thermal Resistance
b
Junction-to-Case Thermal Resistance
R
θ
JA
R
θ
JC
145
190
Steady State
Steady State
60
75
a
b
c
d
Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR4 board using minimum pad size, 1oz copper
Repetitive rating, pulse width limited by junction temperature, t
p
=10µs, Duty Cycle=1%
Repetitive rating, pulse width limited by junction temperature T
J
=150°C.
Will Semiconductor Ltd.
2
2017/05/04- Rev.1.0
WPM3020
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BV
DSS
I
DSS
I
GSS
V
GS
= 0
V
,
I
D
= -250uA
V
DS
=-24
V
,
V
GS
= 0V
V
DS
= 0
V
,
V
GS
= ±12V
-30
V
-1
uA
n
A
±100
V
GS(TH)
R
DS(on)
g
FS
V
GS
= V
DS
, I
D
= -250uA
V
GS
=-10
V
,
I
D
= -3.8A
V
GS
= -4.5
V
, I
D
= -2.5A
V
GS
= -2.5
V
, I
D
= -2.0A
V
DS
= -5
V
,
I
D
= -3.8A
-0.5
-1.0
43
48
65
6
-1.5
57
V
m
Ω
S
Drain-to-source On-resistance
Forward Transconductance
71
115
16
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
1300
93
V
GS
= 0
V
, f =
1
.0MHz, V
DS
-15 V
=
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
pF
nC
73
27
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
1.1
2.2
2.0
V
GS
= -10
V
, V
DS
= -10
V
,
I
D
=-3.0 A
Q
GD
td(ON)
11
4.4
78.8
6
tr
V
GS
= -10
V
, V
DS
=-15
V
,
ns
V
I
D
=-2A, R
G
=6
Ω
Turn-Off Delay Time
Fall Time
td(OFF)
tf
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
= 0
V
,
I
S
= -1A
-0.8
-1.5
Will Semiconductor Ltd.
3
2017/05/04- Rev.1.0
WPM3020
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
12
10
8
20
16
12
8
V
GS
=-10V
V
GS
=-4.5V
V
GS
=-3.5V
V
DS
=-5V
V
GS
=-2.5V
6
150
o
C
25
o
C
4
-50
o
C
4
2
0
0.5
0
0
1
2
3
1.0
1.5
2.0
2.5
-V
DS
-Drain to Source Voltage(V)
-V
GS
-Gate to Source Voltage(V)
Output characteristics
Transfer characteristics
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
I
D
=-3.8A
V
GS
=-2.5V
0.08
0.07
0.06
0.05
0.04
0.03
V
GS
=-4.5V
V
GS
=-3.5V
V
GS
=-10V
2
4
6
8
10
4
8
12
16
20
-V
GS
-Gate to Source Voltage (V)
-I
DS
-Drain to Source Current(A)
On-Resistance vs. Drain current
On-Resistance vs. Gate-to-source voltage
1.2
1.6
1.4
1.2
1.0
0.8
0.6
V
GS
=-10V
I
D
=-3.8A
I
D
=-250uA
1.1
1.0
0.9
0.8
0.7
0.6
-50
0
50
100
150
-50
0
50
100
150
Temperature (
o
C)
Temperature (
o
C)
On-Resistance vs. Junction temperature
Threshold voltage vs. Temperature
Will Semiconductor Ltd.
4
2017/05/04- Rev.1.0
WPM3020
10
8
1800
1500
1200
900
600
300
0
F=1MHz
6
Ciss
T=25
o
C
T=150
o
C
4
Crss
Coss
2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
-V
DS
-Drain to Source Voltage (V)
-V
SD
-Source to Drain Voltage (V)
Capacitance
Body diode forward voltage
100
10
100
80
60
40
20
0
T
J(MAX)
=150
o
C
T
A
=25
o
C
Limit by Rdson
100us
1ms
1
10ms
10s
100ms
1s
0.1
0.01
DC
T
A
=25
o
C
Single Pulse
BVDSS Limit
10
0.1
1
100
1E-4
1E-3
0.01
0.1
1
10
100
1000
-V
DS
-Drain to Source Voltage(V)
Pulse width (S)
*V
GS
>minimum V
GS
at which R
DS(ON)
is specified
Single pulse power
Safe operating power
10
V
DS
=-10V
I
D
=-3.0A
8
6
4
2
0
0
5
10
15
20
25
30
Q
g
(nC)
Gate Charge Characteristics
Will Semiconductor Ltd.
5
2017/05/04- Rev.1.0
WPM3020
Transient thermal response (Junction-to-Ambient)
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 145
_
C/W
thJA
(t)
3. T
JM
– T
= P
Z
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Will Semiconductor Ltd.
6
2017/05/04- Rev.1.0
WPM3020
Package outline dimensions
SOT-23
Dimensions In Millimeters
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
c
D
E
E1
e
e1
L
0.950 (Typ.)
0.550 (Typ.)
1.800
2.000
L1
0.300
0
o
0.500
8
o
ș
Will Semiconductor Ltd.
7
2017/05/04- Rev.1.0
WPM3020
TAPE AND REEL INFORMATION
Reel Dimensions
Tape Dimensions
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1 Q2
Q3
Q1 Q2
Q3
Q4
Q4
User Direction of Feed
RD
W
Reel Dimension
7inch
8mm
2mm
Q1
13inch
Overall width of the carrier tape
Pitch between successive cavity centers
12mm
4mm
Q2
16mm
8mm
Q3
P1
Q4
Pin1 Pin1
Quadrant
Will Semiconductor Ltd.
8
2017/05/04- Rev.1.0
WPM3020
Suggested Land Pattern
SOT-23
Y
Z
C
X
E
Dimensions
Valu
e
(mm)
2.9
Z
X
Y
C
E
0.8
0.9
2.0
1.35
Will Semiconductor Ltd.
9
2017/05/04- Rev.1.0
