WILLSEMI-Will-Semicon-WPT2F30-6-TR
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WPT2F30
WPT2F30
Single, PN
P
,
–
30
V
,
–
3A, Power Transistor
Descriptions
The WPT2F30 is PNP bipolar power transistor
with very low saturation voltage. This device is
suitable for use in charging circuit and other power
management. Standard Product WPT2F30 is
Pb-free.
SOT-23-6L
C 1
6 C
2
C
E
5
4
C
Features
3
B
Pin configuration (Top view)
ꢀ
ꢀ
ꢀ
ꢀ
Ultra low collector-to-emitter saturation voltage
High DC current gain >100
6
5
4
3A continue collector current
2F30
YYWW
Small package SOT-23-6L.
1
2
3
2F30
YY
= Device code
= Year
WW
= Week
Applications
Marking
ꢀ
ꢀ
ꢀ
Charging circuit
Order information
Power regulator
Device
Package
Shipping
Other power management in portable
equipments
WPT2F30-6/TR SOT-23-6L 3000/Reel&
T
a
pe
Will Semiconductor Ltd.
1
Nov, 2012 – Rev.1.2
WPT2F30
Absolute maximum ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Symbol
V
CEO
Value
-30
Unit
V
V
CBO
-30
V
-6
V
EBO
V
Continues collector current
a
Continues collector current
b
Pulse collector current
c
Power dissipation
a
A
-3
I
C
-2
A
-6
I
CM
P
D
A
1.2
W
W
°C
°C
°C
Power dissipation
b
0.8
Junction
T
e
mperature
T
J
T
L
150
260
-55 to 150
Lead
T
e
mperature
Storage
T
e
mperature Range
T
stg
Thermal resistance ratings
Parameter
Symbol
R
θ
JA
Value
104
Unit
°C/W
°C/W
Junction-to-Ambient Thermal Resistance
a
Junction-to-Ambient Thermal Resistance
b
155
R
θ
JA
a
b
c
d
Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR-4 board using minimum pad size, 1oz copper
Pulse width=300µs, Duty Cycle<2%
Maximum junction temperature T
J
=150°C.
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
Test Conditions
I
C
=-10mA, I
B
=0mA
I
C
=-1mA, I
E
=0mA
I
E
=-100uA, I
C
=0mA
V
CB
=-30V
Min.
Typ.
Max.
Unit
V
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
-30
-30
-6
V
V
-100
-100
-0.35
-0.30
-0.39
-1.5
nA
nA
V
Emitter cutoff current
I
EBO
V
EB
=-5V
I
C
=-2A, I
B
=-200mA
I
C
=-0.5A, I
B
=-5mA
I
C
=-0.8A, I
B
=-10mA
I
C
=-2A, I
B
=-200mA
I
C
=-0.5A, V
CE
=-2V
V
CE
=-2
V
,
I
C
=-1A
-0.28
-0.20
-0.28
-1.0
Collector-emitter saturation voltage
c
V
CE(sat)
V
V
Base-emitter saturation voltage
c
Base-emitter forward voltage
DC current gain
c
V
BE(sat)
V
BE(on)
h
FE
V
-0.7
-1.0
V
100
200
300
Will Semiconductor Ltd.
2
Nov, 2012 – Rev.1.2
WPT2F30
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
−
10
−
5
-3.0
V
CE
= −
2V
-50mA
-40mA
−
2
−
1
−
0.5
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
Ta
=
85
°
C
25
°
C
-30mA
-20mA
-10mA
−
0.2
−
0.1
−
0.05
−
45
°
C
−
0.02
−
0.01
−
5m
I
B
= -5mA
-4
−
2m
−
1m
0
−
0.2
−
0.4
−
0.6
−
0.8
−
1.0
−
1.2
−
1.4
0
-1
-2
-3
-5
BASE TO EMITTER VOLTAGE
: V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE: V
CE
(V)
Output characteristics
Transfer characteristics
C B
−
2
−
1
5k
I /I
=
10
V
CE
=
−
2V
2k
Ta=85
°
C
−
500m
25
°
C
1k
Ta
=
85
°
C
25
°
C
−
45
°
C
−
45
°
C
−
200m
−
100m
500
200
100
50
−
50m
−
20m
−
10m
−
5m
20
10
5
−
2m
−
1m
−
2m
−
5m
−
0m
−
20m
−
50m
−
1
00m
−
200m
−
500m
−
1
−
2
−
5
−
10
−
1m
−
2m
−
5m
−
1
0
m
−
20m
−
50m
−
1
0
0m
−
200m
−
500m
−
1
−
2
−
5
−
10
COLLECTOR CURRENT
: I
C
(A)
DC current gain
C-E saturati
C
o
O
n
LL
v
E
C
o
T
l
O
t
R
a
g
C
e
U
R
v
R
E
s
N
.
T
C
:
I
ollector current
C
(A)
10
100
80
60
40
20
0
100
m
s
1 ms
1.0
10 ms
100 ms
0.1
1 s
DC
SINGLE PULSE
T =
25
°
C
a
0.01
0
25
50
75
100
125
150
0.1
1.0
10
100
Ambient Temperature(
O
C)
COLLECTOR TO EMITTER VOLTAGE: V
(V)
CE
Power Derating
Safe operating area
2
1
Duty = 0.5
0.2
0.1
P
CM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. R
3. T
= 104 °C/W
thJA
– T
= P
Single Pulse
A
x Z
thJA
x RthJA
JM
CM
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
3
Will Semiconductor Ltd.
Nov, 2012 – Rev.1.2
WPT2F30
Package outline dimensions
SOT-23-6L
Dimensions In Millimeters
Symbol
Min.
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
Typ.
1.150
Max.
A
A1
A2
b
1.250
0.100
1.150
0.500
0.200
3.020
1.700
2.950
–
1.100
0.400
–
c
D
2.920
1.600
2.800
0.950(Basic)
1.900
–
E
E1
e
e1
L
1.800
0.300
0
o
2.000
0.600
8
o
–
ꢀ
Will Semiconductor Ltd.
4
Nov, 2012 – Rev.1.2
