Winsok-Semicon-WSD2068
| Part # | Winsok-Semicon-WSD2068 |
Download  | Winsok-Semicon-WSD2068 |
WSD2068
Dual
N-Ch MOSFET
General Description
Product Summery
BV
DSS
The
WSD2068
is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate
charge for
most of the small power switching
and load
switch applications.
R
DSON
15.5
m
Ω
I
D
7.5
A
20V
Applications
The
WSD2068
meet the RoHS and Green
Product requirement with full function
reliability approved.
z
Power Management in Notebook Computer, Portable
Equipment and Battery Powered Systems.
z
DC-DC Power System
z
ESD:2KV
Features
DFN
2X
3
A_EP
Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent Cdv/dt effect decline
z
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
20
Units
V
Drain-Source Voltage
V
GS
Gate-Sou
r
ce Voltage
±
12
7.5
V
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 4.5V
1
Continuous Drain Current, V
GS
@ 4.5V
1
Pulsed Drain Current
2
A
6
.5
3
0
A
A
Total Power Dissipation
3
Total Power Dissipation
3
W
W
℃
℃
1.
5
P
D
@T
A
=25
℃
P
D
@T
A
=70
℃
T
STG
1.0
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
12
0
8
3
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
(Steady State)
Thermal Resistance Junction-ambient
1
(t<10S)
R
θ
JA
—
Dec.2014
Page 1
WSD2068
Dual
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
20
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=4.5V , I
D
=
5.5
A
0.022
12
—
V/
℃
15.5
20
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
—
16
V
GS
=2.5V , I
D
=
5.5
A
0.
3
0.
7
-2.32
—
V
GS(th)
Gate Threshold Voltage
1.
0
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/
℃
V
DS
=16V , V
GS
=0V , T
J
=25
℃
V
DS
=16V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
12V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=10A
20
11
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
—
Ω
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
15
20
—
V
DS
=1
0
V , V
GS
=4.5V , I
D
=
5
A
nC
n
s
Q
gs
Q
gd
T
d(on)
T
r
2.2
4.2
148
277
—
—
V
D
S
=10V , V
GS
=
10
V , R
G
=
6
Ω
,
I
D
=
5
A
,RL=
2
Ω
—
1616
751
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
1219
150
1
35
0
—
V
DS
=1
0
V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
123
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
5
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
15
—
—
A
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
0.
76
2
45
1
105
1.
3
—
V
—
nS
nC
I
F
=
5
A
,
dI/dt=
1
00A/µs , T
J
=25
℃
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper
, t<10sec
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page
2
WSD2068
Dual
N-Ch MOSFET
Typical Characteristics
0.045
10
8
TJ = 25
Ʊ
C
0.035
0.025
0.015
0
1.8V
6
2V
2.5V
4
2
3V,3.5V,4V,4.5V,6V
0
0
1
2
0
2
4
10
ID-Drain Current (A)
1. On-Resistance vs. Drain Current
VGS – Gate-to-Source Voltage (V)
2. Transfer Characteristics
0.08
0.06
0.04
0.02
0
100
10
TJ = 25
Ʊ
C
ID = 5A
TJ = 25
Ʊ
C
1
0.1
0.01
0
2
4
0.2
0.4
0.6
0.8
1
1.2
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
10
8
1800
1600
1400
1200
1000
800
600
400
200
0
F = 1MHz
6V,4.5V,4V,
3.5V,3V
Ciss
2.5V
2V
6
1.8V
4
2
Coss
Crss
0
0
0.05
0.1
0.15
0.2
0.25
0
5
10
15
20
VDS – Drain-to-Source Voltage (V)
VDS-Drain-to-Source Voltage (V)
5. Output Characteristics
6. Capacitance
Dec.2014
Page
3
WSD2068
Dual
N-Ch MOSFET
Typical Characteristics
10
2
1.5
1
VDS = 10V
ID = 5A
8
6
4
2
0
0.5
0
10
20
30
40
-50 -25
0
25
50
75 100
125 150
Qg – Total Gate Charge (nC)
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
100
10
50
45
40
35
30
25
20
15
10
5
10 uS
100 uS
1 mS
10 mS
100 mS
1 SEC
10 SEC
100 SEC
DC
1
0.1
0.01
Idm limit
Limited by
RDS
0
0.1
1
10
100
1000
0.001 0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
0.1
D = 0.5
R
θ
JA
(t) = r(t) + R
θ
JA
0.2
0.1
R
θ
JA
= 120
Ʊ
C /W
0.05
0.02
Single Pulse
P(pk)
t
1
t
2
0.01
T
J
– T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t1 TIME (sec)
1
10
100
1000
11. Normalized Thermal Transient Junction to Ambient
Dec.2014
Page
4
WSD2068
Dual
N-Ch MOSFET
Package Information
DFN2x3A-6_EP
E1
D
e
L
E1
b
TOP VIEW
BOTTOM VIEW
A
A3
SIDE VIEW
DFN2x3A-6_EP
S
RECOMMENDED LAND PATTERN
Y
M
B
O
L
MILLIMETERS
INCHES
1.6
MIN.
MAX.
1.00
MIN.
0.028
0.000
MAX.
0.039
0.002
0.5
A
0.70
0.00
0.05
A1
A3
b
0.203 REF
0.008 REF
0.008
0.012
0.083
0.071
0.122
0.063
0.20
1.90
1.60
2.90
1.40
0.30
2.10
1.80
3.10
1.60
D
0.075
0.063
0.114
0.055
1.6
3
E1
E
D1
e
0.4
0.50 BSC
0.02 BSC
0.25
L
0.30
0.012
0.020
0.50
UNIT: mm
Dec.2014
Page
5
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life
Ͳ
support
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aircraft’s
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control
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in
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serious
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physical
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Consult
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with
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representative
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nearest
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you
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before
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described
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as
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in
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products
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o
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verify
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symptoms
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evaluate
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test
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devices
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mounted
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in
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the
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customer’s
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or
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Winsok
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power
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Semiconductor
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CO.,
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LTD.
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strives
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ꢀ
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Ͳ
quality
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high
Ͳ
reliability
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fail
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probabilistic
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could
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cause
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damage
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to
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other
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property.
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When
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designing
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adopt
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safety
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measures
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so
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that
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these
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kinds
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of
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Such
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to
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error
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prevention
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for
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design,
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structural
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design.
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parameters)
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to
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due
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to
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product/technology
ꢀ
improvement,etc.
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When
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refer
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to
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the
ꢀ
“Delivery
ꢀ
Specification”
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for
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the
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you
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Intend
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9,
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this
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catalog
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provides
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information
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as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
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subject
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to
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change
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without
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notice.
ꢀ
