Winsok-Semicon-WSD2090DN56
| Part # | Winsok-Semicon-WSD2090DN56 |
Download  | Winsok-Semicon-WSD2090DN56 |
WSD2090DN56
N-Ch MOSFET
General Description
Product Summery
The
WSD2090DN56
is the highest performance
trench N-Ch MOSFET with extreme high cell
density ,
which provide excellent RDSON and
gate charge
for most of the synchronous buck
converter applications
.
BVDSS
RDSON
2.8
m
Ω
ID
2
0V
80
A
Applications
The
WSD2090DN56
meet the RoHS and Green
Product requirement 100% EAS guaranteed with
full function reliability approved.
z
Switch
z
Power System
z
Load Switch
Features
DFN
5X6
-8
Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
VDSS
Parameter
Max.
Units
V
Drain-Source Voltage
Gate-Source Voltage
20
VGSS
±12
V
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
note1
80
A
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
IDM
59
A
360
A
EAS
Single Pulsed Avalanche Energy
note2
Power Dissipation
110
mJ
W
P
D
81
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance Junction-Case 1
Operating and Storage Temperature Range
65
4
℃
/W
℃
/W
℃
R
θ
JC
TJ, TSTG
-55 to +175
Rev1.0 May.2021
Page 1
WSD2090DN56
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BVDSS
△
BVDSS/
△
TJ
VGS(th)
RDS(ON)
RDS(ON)
IDSS
Parameter
Conditions
Min
20
—
Typ
24
Max Units
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
Gate Threshold Voltage
Static Drain-Source On-Resistance
Static Drain-Source On-Resistance
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Input Capacitance
V
GS
=0V, I
D
=250
μ
A
Reference to 25
℃
, I
D
=1mA
V
DS
= V
GS
, I
D
=250
μ
A
V
GS
=4.5V, I
D
=30A
V
GS
=2.5V, I
D
=20A
V
DS
=20V,V
GS
=0V
V
GS
=±10V, V
DS
=0V
V
V/
℃
V
—
—
0.018
0.65
2.8
0.50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.0
4.0
6.0
1
m
Ω
4.0
μ
A
—
IGSS
C
iss
±100
—
nA
—
3200
460
446
11.05
1.73
3.1
V
DS
=10V,V
GS
=0V,f=1MHZ
V
GS
=4.5V,V
DS
=10V,I
D
=30A
pF
nC
C
oss
Output Capacitance
—
C
rss
Reverse Transfer Capacitance
Total Gate Charge
—
Q
g
—
Q
gs
Gate-Source Charge
—
Q
gd
Gate-Drain Charge
—
tD(on)
t
r
Turn-on Delay Time
9.7
—
Turn-on Rise Time
37
—
V
GS
=4.5V, V
DS
=10V, I
D
=30A
R
GEN
=1.8
Ω
ns
V
tD(off)
t
f
Turn-off Delay Time
63
—
Turn-off fall Time
52
—
V
SD
Diode Forward Voltage
I
S
=7.6A,V
GS
=0V
1.2
—
Note :
1
、
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2
、
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3
、
The power dissipation is limited by 150
℃
junction temperature
4
、
The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
5
、
EAS condition: TJ=25
℃
, VDD=15V, VG=4.5V, RG=25
Ω
, L=0.5mH, IAS=21A
Rev1.0 May.2021
Page
2
WSD2090DN56
N-Ch MOSFET
Typical Characteristics
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 4: Body Diode Characteristics
Figure 5: Gate Charge Characteristics
Figure 6: Capacitance Characteristics
Rev1.0 May.2021
Page
3
WSD2090DN56
N-Ch MOSFET
Figure 7: Normalized Breakdown Voltage vs
Junction Temperature
Figure 8: Normalized on Resistance vs.
Junction Temperature
Figure 9: Maximum Safe Operating Area
Figure 10: Maximum Continuous Drain Current
vs. Ambient Temperature
Figure.11: Maximum Effective Transient Thermal
Impedance, Junction-to-Ambien
Rev1.0 May.2021
Page
4
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