Winsok-Semicon-WSD20L70DN
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WSD20L70DN
P
-Ch MOSFET
General Description
Product Summery
The
ꢁ
WSD20L70DN
is the highest performance
trench P-ch
MOSFETs with extreme high cell
density ,
which provide excellent RDSON and
gate charge
for most of the synchronous buck
converter applications
.
BVDSS
RDSON
6.7
m
Ω
ID
–
2
0V
–
7
0
A
Applications
The
WSD20L70DN
meet the RoHS and Green
Product requirement 100% EAS guaranteed
with full
function reliability approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
DFN
3
X
3
-8
Pin Configuration
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Rating
Parameter
Symbol
Units
10s
Steady State
-2
0
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
V
±
ꢀ
–
7
0
–
45
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
A
A
–
36
–
28
–
30
–
23
A
A
–
200
180
–
60
83
A
EAS
Single Pulse Avalanche Energy
3
mJ
A
I
AS
Avalanche Current
Total Power Dissipation
4
Total Power Dissipation
4
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
W
W
℃
℃
5.2
4.0
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
Thermal Resistance Junction-Case
1
55
20
R
θ
JA
—
1.5
R
θ
JC
—
Page 1
Dec.2014
WSD20L70DN
P
-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
–
2
0
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-
4.5
V , I
D
=-
16
A
V
GS
=-
2
.5V , I
D
=-
1
2
A
V
GS
=-
1.8
V , I
D
=-
9
A
-0.0232
6.7
—
V/
℃
7
.
9
9.
8
—
8.4
—
Static Drain-Source On-Resistance
2
R
DS(ON)
10.3
12.3
17.6
m
Ω
12.2
15.5
19.5
—
—
—
–
0.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
GS
=-
1.5
V , I
D
=-
8
A
V
GS
=-
1.2
V , I
D
=-
5
A
V
GS(th)
Gate Threshold Voltage
–
0.
6
4.6
—
–
0.9
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
-1
V
DS
=-
20
V , V
GS
=0V , T
J
=25
℃
V
DS
=-
20
V , V
GS
=0V , T
J
=55
℃
I
DSS
Drain-Source Leakage Current
uA
—
-5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
GS
=
±
8
V , V
DS
=0V
110
V
DS
=-5V , I
D
=-
2
0A
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
3
—
Ω
Q
g
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
70
100
—
9.2
V
DS
=-1
0
V , V
GS
=-4.5V , I
D
=-
16
A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
18.4
18
—
—
—
—
—
—
—
—
V
DD
=-1
0
V , V
GS
=-
4.5
V ,
R
G
=
3
Ω
I
D
=-1A
,R
L
=
0.5
Ω
52
285
123
5625
927
716
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Input Capacitance
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
V
DD
=-
10
V , L=0.
5
mH , I
AS
=-
16
A
100
—
—
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
–
10
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
–
10
0
—
—
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
—
—
-1
—
—
V
78
nS
nC
I
F
=-
16
A
,
dI/dt=100A/µs
,
T
J
=25
℃
495
Q
rr
—
Note :
1.
2
The data tested by surface mounted on a 1 inch
FR-4 board with 2OZ copper
,t
≦
10sec
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-
10
V,V
GS
=-10V,L=0.
1
mH,I
AS
=-
16
A
4.The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Page
2
Dec.2014
WSD20L70DN
P
-Ch MOSFET
Typical Characteristics
150
18
12
I
D
=-
16
A
125
100
75
50
25
0
V
GS
=-
4.5
V
V
GS
=-
2.5
V
V
GS
=-
1.8
V
7
0
V
GS
=-
1
.5V
V
GS
=-
1.2
V
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.2
3
4.5
3.5
-VDS ,
Drain-to-Source Voltage (V)
Fig.2 On-Resistance vs. G-S Voltage
Fig.1 Typical Output Characteristics
12
8
5
V
DS
=-
10
V
I
D
=-
16
A
4
3
2
1
0
T =150
T =25
℃
J
℃
J
4
0
0.00
0.25
0.50
0.75
1.00
80
0
20
30
40
60
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics of Reverse
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T ,Junction
Temperature (
)
℃
T ,
Junction Temperature (
J
)
℃
J
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Page
3
Dec.2014
WSD20L70DN
P
-Ch MOSFET
1000.00
100.00
10.00
1.00
10000
1000
100
F=1.0MHz
Ciss
10us
100us
1ms
Coss
Crss
10ms
100ms
DC
0.10
T =25
℃
C
Single Pulse
0.01
10
0.1
1
10
100
1
5
9
13
17
21
25
-V
DS
(V)
-V
DS
, Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
S
I
NGLE PULSE
T
ON
T
D = T
ON
/T
T
J
peak = T
C
+ P
DM
x R
θ
JC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
Page
4
Dec.2014
Attention
ꢀ
1,
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Any
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and
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all
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Winsok
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products
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described
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contained
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herein
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do
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have
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specifications
ꢀ
that
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can
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handle
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applications
ꢀ
that
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require
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extremely
ꢀ
high
ꢀ
levels
ꢀ
of
ꢀ
reliability,
ꢀ
such
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as
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life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
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or
ꢀ
other
ꢀ
applications
ꢀ
whose
ꢀ
failure
ꢀ
can
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be
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reasonably
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expected
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to
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result
ꢀ
in
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serious
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physical
ꢀ
and/or
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material
ꢀ
damage.
ꢀ ꢀ
Consult
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with
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your
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Winsok
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ꢀ
representative
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nearest
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you
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before
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using
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Winsok
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products
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described
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contained
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herein
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in
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assumes
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responsibility
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for
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equipment
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failures
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that
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result
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products
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at
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values
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that
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exceed,
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even
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momentarily,
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rated
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values
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(such
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as
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maximum
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ratings,
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operating
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condition
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ranges,
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or
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other
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parameters)
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listed
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in
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products
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specifications
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of
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any
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all
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Winsok
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products
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described
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contained
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Specifications
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of
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any
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all
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stipulate
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the
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performance,
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characteristics,
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and
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functions
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of
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the
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described
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products
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in
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the
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independent
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state,
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are
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not
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guarantees
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of
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the
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performance,
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characteristics,
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and
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functions
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of
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described
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products
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as
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mounted
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in
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the
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customer’s
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products
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or
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equipment.
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T
o
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verify
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symptoms
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and
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states
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that
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cannot
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be
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evaluated
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in
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an
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independent
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device,
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the
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customer
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should
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always
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evaluate
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test
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devices
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mounted
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in
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the
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customer’s
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or
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equipment.
ꢀ
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Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
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strives
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to
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supply
ꢀ
high
Ͳ
quality
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high
Ͳ
reliability
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products.
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However,
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any
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and
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all
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semiconductor
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products
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fail
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with
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some
ꢀ
probability.
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It
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is
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possible
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that
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these
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probabilistic
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could
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give
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rise
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to
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accidents
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could
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endanger
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human
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lives
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that
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could
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give
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rise
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to
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smoke
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or
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fire,
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that
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could
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cause
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damage
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to
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other
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property.
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When
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designing
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equipment,
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adopt
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safety
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measures
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so
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that
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these
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kinds
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of
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accidents
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events
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Such
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include
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but
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are
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not
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limited
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to
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protective
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circuits
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and
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error
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prevention
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circuits
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for
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safe
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design,
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redundant
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design,
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and
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structural
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design.
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all
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export
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license
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parameters)
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due
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improvement,etc.
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When
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refer
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to
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the
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“Delivery
ꢀ
Specification”
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for
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you
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Intend
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9,
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this
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catalog
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information
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as
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of
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Sep.2014. Specifications
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information
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herein
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are
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subject
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to
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change
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without
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notice.
ꢀ
