Winsok-Semicon-WSD30150ADN56
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WS
D
30150A
DN56
N-Ch MOSFET
General Description
Product Summery
The
WSD30150ADN56
is the highest performance
trench N-Ch
MOSFET with extreme high cell
density ,
which provide excellent RDSON and gate
charge for
most of the synchronous buck converter
applications .
BVDSS
RDSON
ID
30V
1
45
A
2.
2
mΩ
Applications
The
WSD30150ADN56
meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter
z
Networking DC-DC Power System
z
Power Tool Application
Features
Advanced high cell density Trench technology
Super Low Gate Charge
DFN5X6-8
Pin Configuration
Excellent CdV/dt effect decline
100% EAS Guaranteed
G
reen Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
30
Units
V
V
Drain-Source Voltage
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1,7
Continuous Drain Current, V
GS
@ 10V
1,7
Pulsed Drain Current
2
V
GS
±
20
145
75
A
I
D
@T
C
=25
℃
A
I
D
@T
C
=100
℃
310
I
DM
A
Single Pulse Avalanche Energy
3
EAS
372
86
mJ
A
I
AS
P
D
@T
C
=25
℃
T
STG
Avalanche Current
Total Power Dissipation
4
Storage Temperature Range
78
W
℃
℃
-55 to 175
-55 to 175
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
Unit
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
55
℃
/W
℃
/W
1.
6
—
R
θJC
Rev 1: May.2021
Page 1
WS
D
30150A
DN56
N-Ch MOSFET
Electrical Characteristics (T
J
=25
°C
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
Typ.
—
Max.
Unit
30
—
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/△
T
J
—
—
—
0.022
2.2
—
V/
℃
m
Ω
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=
2
0A
3.5
Static Drain-Source On-Resistance
2
R
DS(ON)
3.1
4.2
2.5
—
V
GS
=
4.5
V , I
D
=15A
1
.
2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.
6
V
GS(th)
Gate Threshold Voltage
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
-6.1
—
mV/
℃
2
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
I
DSS
Drain-Source Leakage Current
uA
—
10
±
100
—
I
GSS
gfs
Gate-Source Leakage Current
Forwar Trd
ansconductance
Gate Resistance
—
nA
S
V
GS
=
±
20V , V
DS
=0V
32
1.1
V
DS
=5V , I
D
=
15
A
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
2.5
—
Ω
22
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
4.3
8.3
V
DS
=15V , V
GS
=
4.5
V , I
D
=
20
A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
Turn-On Delay Time
Rise Time
Rise Time
Turn-Off Dela
y T
ime
Turn-Off Fall Time
16
11
35
40
—
V
DD
=15V , V
G
EN
=10V , R
G
=
6
Ω
,
I
D
=1A
, R
L
=15Ω.
—
T
d(off)
T
f
—
—
C
iss
C
oss
C
rss
Input Capacitance
2450
590
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
—
Reverse Transfer Capacitance
245
—
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Single Pulse Avalanche Energy
5
EAS
V
DD
=25V , L=0.1mH , I
AS
=
15
A
85
—
—
mJ
Diode Characteristics
Symbol
Parameter
Continuous Source Current
1,6
Conditions
Min.
Typ.
—
Max.
Unit
A
—
5
0
I
S
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=
20
A , T
J
=25
℃
2,6
I
SM
Pulsed Source Current
—
—
—
3
1
0
A
V
Diode Forward Voltage
2
V
SD
—
1.2
Note :
2
1.
2.
3.
4.
The data tested by surface mounted on a 1 inch
FR-4 board with 2OZ copper
,t<10sec
.
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=
20
A
The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
7.Package limitation current is
1
0
0
A.
Rev 1: May.2021
Page
2
WS
D
30150A
DN56
N-Ch MOSFET
Typical Characteristics
4.00
3.75
3.50
3.25
2
.
8
0
2.
0
0
12
I
D
=
20
A
10
8
V
GS
=10V
V
GS
=7V
6
V
GS
=5V
4
V
GS
=4.5V
2
V
GS
=3V
0
0
0.025
0.05
0.075
0.1
4
6
8
10
V
D
S
, Drain-to-Source Voltage (mV)
V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate- Source
100
10
10
8
V
DS
=15V
I
D
=
20
A
6
T =150
J
T =25
℃
J
℃
4
2
1
0
0
0
20
30
48
0.2
0.4
0.6
0.8
1
V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
8.0
1.6
5.0
2.4
0.
6
1.4
1.2
0
-50
0
50
100
150
-50
0
50
100
150
T ,Junction
Temperature (
J
)
℃
T ,
Junction Temperature (
J
)
℃
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
Rev 1: May.2021
Page
3
WS
D
30150A
DN56
N-Ch MOSFET
100000
10000
1000
100
1000.00
100.00
10us
100us
Ciss
10.00
10ms
100ms
DC
Coss
Crss
1.00
0.10
0.01
T =25
℃
C
Single Pulse
F=1.0MHz
5
10
0.1
1
100
1000
10
V
DS
(V)
1
9
13
17
21
25
V
DS
, Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.3
0.1
0.1
0.05
P
DM
T
ON
T
0.02
D = T
ON
/T
T
J
peak = T
C
+ P
DM
x R
θJC
SINGLE PULSE
0.01
0.01
100
1000
10
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal
Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
Rev 1: May.2021
Page
4
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Any
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that
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require
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extremely
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high
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levels
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of
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reliability,
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such
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as
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life
Ͳ
support
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systems,
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aircraft’s
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control
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systems,
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to
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result
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in
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serious
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physical
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representative
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o
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adopt
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Sep.2014. Specifications
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subject
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change
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without
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notice.
ꢀ
