Winsok-Semicon-WSD3028DN
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WS
D30
28
DN
N-Ch MOSFET
General Description
Product Summery
The WSD3028DN is the highest performance
trench N-ch
MOSFET with extreme high cell
density,which provide excellent RDSON and
gate charge
for most of the synchronous buck
converter applications
.
BVDSS
RDSON
25mΩ
ID
30V
19A
Applications
The WSD3028DN meet the RoHS and
Green Product
requirement 100% EAS
guaranteed with
full function reliability
approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
DFN3
.3
X3
.3
-8
L
Pin Configuration
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
30
Units
V
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
GS
±
20
25
V
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
18
A
19
A
15
A
A
40
EAS
Single Pulse Avalanche Energy
3
2
1
mJ
A
I
AS
Avalanche Current
15
Total Power Dissipation
4
Total Power Dissipation
4
W
W
℃
℃
5
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
2.5
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
5
0
4
R
θJC
—
Dec.2014
Page 1
WS
D30
28
DN
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
—
—
1.
2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=
12
A
0.0232
22
—
V/
℃
25
35
2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
32
V
GS
=4.5V , I
D
=
8
A
V
GS(th)
Gate Threshold Voltage
1.
6
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
–
6
.08
—
mV/
℃
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=
10
V , I
D
=
6
A
6.5
2.5
4
.1
1
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
3.3
—
Ω
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
V
DS
=15V , V
GS
=4.5V , I
D
=
6
A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
2.
1
2
—
—
V
DD
=15V , V
G
EN
=10V , R
G
=
6
Ω
I
D
=1A
,
R
L
=15Ω
—
4
15.8
4
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
3
60
55
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
46
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
V
DD
=25V , L=0.1mH , I
AS
=
23
A
2
1
—
—
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
5
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
22
1
A
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
—
V
—
1
6
.5
10
—
—
nS
nC
I
F
=
2
0A
,
dI/dt=100A/µs
,
T
J
=25
℃
Q
rr
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper
,t<10sec
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=2
3
A
4.The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page
2
Attention
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1,
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Any
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applications
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that
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require
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extremely
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high
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levels
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of
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reliability,
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such
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as
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life
Ͳ
support
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systems,
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aircraft’s
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control
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systems,
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or
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other
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whose
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can
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expected
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to
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result
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in
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serious
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physical
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and/or
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material
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damage.
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Consult
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with
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your
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representative
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nearest
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you
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before
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momentarily,
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rated
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(such
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ranges,
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in
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in
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o
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verify
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and
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test
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power
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Semiconductor
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When
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Specification”
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as
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Sep.2014. Specifications
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information
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herein
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are
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subject
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to
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change
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