Winsok-Semicon-WSD3050DN
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WS
D3050DN
N-Ch MOSFET
Product Summery
General Description
The WSD3050DN is the highest performance
trench N-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
BVDSS
RDSON
7
m
Ω
ID
30V
50
A
Applications
The WSD3050DN meet the RoHS and Green
Product requirement , 100% EAS guaranteed
with full function reliability approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
DFN3x3A-8_EP1
Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
10s
Steady State
30
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
V
±
20
50
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
37
A
14
12
A
11.4
9
.7
A
100
50
A
EAS
Single Pulse Avalanche Energy
3
mJ
A
I
AS
Avalanche Current
14
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
Total Power Dissipation
4
26
W
W
℃
℃
2.5
1.6
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
Thermal Resistance Junction-Case
1
70
R
θ
JA
—
50
4.7
R
θ
JC
—
Page 1
Rev1.Apr.2019
WS
D3050DN
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
—
—
1.
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=
15
A
0.024
6.7
—
V/
℃
8.5
11
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
8.2
V
GS
=4.5V , I
D
=1
0
A
V
GS(th)
Gate Threshold Voltage
1.
8
-3.5
—
2.5
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=30A
40
1.0
10
3.5
4.2
9
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
1.5
12
Ω
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
V
DS
=15V , V
GS
=
10
V , I
D
=
15
A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
4.1
4.7
17
V
DD
=15V , V
GS
=10V , R
G
=
6
Ω
I
D
=1A
,R
L
=15Ω
11
23
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
29
7
52
12
C
iss
C
oss
C
rss
Input Capacitance
1200
185
113
1400
220
140
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
18
—
—
mJ
V
DD
=25V , L=0.
1
mH , I
AS
=
20
A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
20
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
100
1
A
—
—
V
V
GS
=0V , I
S
=
2
A , T
J
=25
℃
—
—
nS
nC
15
7
I
F
=
15
A
,
dI
SD
/dt=100A/µs
,
T
J
=25
℃
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper
,t<10sec
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.
1
mH,I
AS
=
20
A
4.The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Rev1.Apr.2019
Page
2
WS
D3050DN
N-Ch MOSFET
Typical Characteristics
140
11.5
11.0
10.5
10.0
9.5
I
D
=
15
A
120
100
80
60
40
20
0
V
GS
=10V
V
GS
=7
9.0
V
GS
=5V
V
GS
=4.5V
8.5
8.0
7.5
V
GS
=3V
3
6.
5
0
1
2
4
4
6
8
10
V
GS
(V)
V
D
S
, Drain-to-Source Voltage (V)
Fig.2 On-Resistance vs. Gate-Source
Fig.1 Typical Output Characteristics
90
V
DS
=15V
I
D
=
15
A
75
60
45
T =150
T =25
℃
J
℃
J
30
15
0
0
0.3
0.6
0.9
1.2
V
SD
, Source-to-Drain Voltage (V)
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics of Reverse
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T ,Junction
Temperature (
J
)
T ,
Junction Temperature (
J
)
℃
℃
Fig.6 Normalized R
DSON
vs. T
J
Fig.5 Normalized V
GS(th)
vs. T
J
Rev1.Apr.2019
Page
3
WS
D3050DN
N-Ch MOSFET
10000
8
00
100
10
Ciss
Coss
Crss
F=1.0MHz
1
4
7
10
13
16
19
22
V
DS
, Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
D = T
ON
/T
S
I
NGLE PULSE
T
ON
T
T
J
peak = T
C
+ P
DM
x R
θ
JC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
Rev1.Apr.2019
Page
4
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