Winsok-Semicon-WSD3056DN

WSD3056DN  

Dual N-Ch MOSFET  

Product Summery  

General Description  

B

VDSS  

R

DSON  

I

D

30V  

35A  

13m

Ω

 

The WSD3056DN is the highest performance trench  

Dual N-Ch MOSFET with extreme high cell  

density,which provide excellent R

DSON

and gate  

charge for

 

most of the synchronous buck converter  

applications .  

Applications  

POL Applications  

MB / VGA / Vcore  

Load Switch  

The WSD3056DN meet the RoHS and Green  

Product requirement 100% EAS guaranteed with

 

full  

function reliability approved.  

SMPS 2nd SR  

Features  

DFN3X3 Dual Pin Configuration  

Advanced high cell density Trench technology  

Super Low Gate Charge  

Excellent CdV/dt effect decline  

100% EAS Guaranteed  

Green Device Available  

Absolute Maximum Ratings @TA=25

℃

unless otherwise noted  

Parameter  

Rating  

30  

Symbol  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

V

V

DS  

GS  

V

V

±20  

35  

T

C

C

=25°C  

I

D

Drain Current (Continuous) *AC  

A

T

=100°C  

22  

Drain Current (Pulse) *B  

Power Dissipation  

140  

27  

I

DM  

A

T

C  

=25°C  

P

D

W

Single Pulse Avalanche Energy  

13  

62  

EAS  

mJ  

Thermal Resistance Junction to ambient  

Thermal Resistance Junction to Case  

R

θ

JA  

℃

/W  

R

θ

JC  

4.6  

℃

/W  

Operating Temperature/ Storage Temperature  

-55~150  

T

J

//T

STG  

℃

Rev1.Apr.2019  

Page 1  

WSD3056DN  

Dual N-Ch MOSFET  

Electrical Characteristics @T

A

=25

℃

unless otherwise noted  

Parameter  

Symbol  

Unit  

Conditions  

Min. Typ. Max.  

Static  

Drain-Source Breakdown Voltage  

V

µA  

nA  

V

GS

= 0V, I

D

= 250

μ

A  

V

DS

= 30 V, V

GS

= 0V  

V

GS

= ±20V, V

DS

= 0V  

V

(BR)DSS  

I

DSS  

30  

Zero Gate Voltage Drain Current  

Gate Leakage Current  

1

I

GSS  

100  

On Characteristics  

Gate Threshold Voltage  

V

m

Ω  

m

Ω  

S

V

GS

= V

DS

, I

DS

= 250µA  

V

GS

= 10V, I

D

= 10A  

V

GS

= 4.5V, I

D

= 8A  

V

DS

= 5V, I

D

= 5A  

V

GS(TH)  

1.2  

1.8  

10  

14  

6

2.5  

13  

18  

R

DS(on)  

Drain-Source On-state Resistance  

Forward Transconductance  

gFS  

Switching  

Qg  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

Turn-on Delay Time  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

Gate resistance  

nC  

nC  

nC  

ns  

ns  

ns  

ns  

Ω

7.2  

2.3  

3

V

GS

=10V, V

DS

=15V, I

D

=5A  

Qgs  

Qgd  

td (on)  

tr  

3.8  

10  

22  

6.6  

2.8  

V

GS

=10V, V

DD

=15V,  

I

D

=1A,R

G

=6

Ω  

td(off)  

tf  

V

GS

=0V, V

DS

=0V, f=1MHz  

V

GS

=0V, V

DS

=15V, f=1MHz  

Rg  

Dynamic  

Ciss  

Input Capacitance  

pF  

pF  

pF  

620  

85  

Output Capacitance  

Coss  

Crss  

Reverse Transfer Capacitance  

30  

Drain-Source Diode Characteristics and Maximum Ratings  

Continuous Source Current  

I

S  

A

A

V

35  

70  

V

G

=V

D

=0V , Force Current  

I

SD

= 1A , V

GS

=0V  

Pulsed Source Current3  

Diode Forward Voltage  

I

SM  

V

SD  

1.2  

Note :  

1

，

Repetitive Rating : Pulsed width limited by maximum junction temperature.  

2

，

VDD=25V,VGS=10V,L=0.1mH,IAS=16A.,RG=25

ꢀ

,Starting TJ=25

℃

.  

3

，

The data tested by pulsed , pulse width

≦

300us , duty cycle

≦

2%.  

4

，

Essentially independent of operating temperature.  

Rev1.Apr.2019  

Page

2  

WSD3056DN  

Dual N-Ch MOSFET  

Typical Characteristics  

V

DS

, Drain -Source Voltage (V)  

Tj – Junction

T

emperature (°C)  

Fig1.

Typical Output Characteristics  

Fig2.

Threshold Voltage Vs. Temperature  

V

GS

, Gate -Source Voltage (V)  

Tj – Junction

T

emperature (°C)  

Fig3.

Typical Transfer Characteristics  

Fig4.

Normalized On-Resistance Vs. Temperature  

V

SD

, Source-Drain Voltage (V)  

V

DS

, Drain -Source Voltage (V)  

Fig5.

Typical Source-Drain Diode Forward Voltage  

Fig6.

Maximum Safe Operating Area  

Rev1.Apr.2019  

Page

3  

WSD3056DN  

Dual N-Ch MOSFET  

Typical Characteristics  

V

DS

, Drain-Source Voltage (V)  

Fig7.

Typical Capacitance Vs.Drain-Source Voltage  

Qg -Total Gate Charge (nC)  

Fig8.

Typical Gate Charge Vs.Gate-Source Voltage  

T1, Square Wave Pulse Duration(sec)  

Fig9.

T1 ,Transient Thermal Response Curve  

Fig10.

Unclamped Inductive Test Circuit and  

waveforms  

Fig11.

Switching Time Test Circuit and waveforms  

Rev1.Apr.2019  

Page

4  

Attention

ꢀ

 

1,

ꢀ

Any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

do

ꢀ

not

ꢀ

have

ꢀ

specifications

ꢀ

that

ꢀ

can

ꢀ

handle

ꢀ  

applications

ꢀ

that

ꢀ

require

ꢀ

extremely

ꢀ

high

ꢀ

levels

ꢀ

of

ꢀ

reliability,

ꢀ

such

ꢀ

as

ꢀ

life

Ͳ

support

ꢀ

systems,

ꢀ

aircraft’s

ꢀ

control

ꢀ

systems,

ꢀ

or

ꢀ  

other

ꢀ

applications

ꢀ

whose

ꢀ

failure

ꢀ

can

ꢀ

be

ꢀ

reasonably

ꢀ

expected

ꢀ

to

ꢀ

result

ꢀ

in

ꢀ

serious

ꢀ

physical

ꢀ

and/or

ꢀ

material

ꢀ

damage.

ꢀ ꢀ  

Consult

ꢀ

with

ꢀ

your

ꢀ

Winsok

ꢀ

power

ꢀ

representative

ꢀ

nearest

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you

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before

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using

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any

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Winsok

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power

ꢀ

products

ꢀ

described

ꢀ

or

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contained

ꢀ

herein

ꢀ

in

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such

ꢀ

applications.

ꢀ  

2,Winsok

ꢀ

power

ꢀ

assumes

ꢀ

no

ꢀ

responsibility

ꢀ

for

ꢀ

equipment

ꢀ

failures

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that

ꢀ

result

ꢀ

from

ꢀ

using

ꢀ

products

ꢀ

at

ꢀ

values

ꢀ

that

ꢀ

exceed,

ꢀ ꢀ  

even

ꢀ

momentarily,

ꢀ

rated

ꢀ

values

ꢀ

(such

ꢀ

as

ꢀ

maximum

ꢀ

ratings,

ꢀ

operating

ꢀ

condition

ꢀ

ranges,

ꢀ

or

ꢀ

other

ꢀ

parameters)

ꢀ

listed

ꢀ

in

ꢀ  

products

ꢀ

specifications

ꢀ

of

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein.

ꢀ  

3,

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Specifications

ꢀ

of

ꢀ

any

ꢀ

and

ꢀ

all

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Winsok

ꢀ

power

ꢀ

products

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described

ꢀ

or

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contained

ꢀ

herein

ꢀ

stipulate

ꢀ

the

ꢀ

performance,

ꢀ  

characteristics,

ꢀ

and

ꢀ

functions

ꢀ

of

ꢀ

the

ꢀ

described

ꢀ

products

ꢀ

in

ꢀ

the

ꢀ

independent

ꢀ

state,

ꢀ

and

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are

ꢀ

not

ꢀ

guarantees

ꢀ

of

ꢀ

the

ꢀ  

performance,

ꢀ

characteristics,

ꢀ

and

ꢀ

functions

ꢀ

of

ꢀ

the

ꢀ

described

ꢀ

products

ꢀ

as

ꢀ

mounted

ꢀ

in

ꢀ

the

ꢀ

customer’s

ꢀ

products

ꢀ

or

ꢀ  

equipment.

ꢀ

T

o

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verify

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symptoms

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and

ꢀ

states

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that

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cannot

ꢀ

be

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evaluated

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in

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an

ꢀ

independent

ꢀ

device,

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the

ꢀ

customer

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should

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always

ꢀ  

evaluate

ꢀ

and

ꢀ

test

ꢀ

devices

ꢀ

mounted

ꢀ

in

ꢀ

the

ꢀ

customer’s

ꢀ

products

ꢀ

or

ꢀ

equipment.

ꢀ  

4,

ꢀ

Winsok

ꢀ

power

ꢀ

Semiconductor

ꢀ

CO.,

ꢀ

LTD.

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strives

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to

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supply

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high

Ͳ

quality

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high

Ͳ

reliability

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products.

ꢀ

However,

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any

ꢀ

and

ꢀ

all

ꢀ  

semiconductor

ꢀ

products

ꢀ

fail

ꢀ

with

ꢀ

some

ꢀ

probability.

ꢀ

It

ꢀ

is

ꢀ

possible

ꢀ

that

ꢀ

these

ꢀ

probabilistic

ꢀ

failures

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could

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give

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rise

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to

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accidents

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or

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events

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that

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could

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endanger

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human

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lives

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that

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could

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give

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rise

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to

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smoke

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or

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fire,

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that

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could

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cause

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damage

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to

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other

ꢀ  

property.

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When

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designing

ꢀ

equipment,

ꢀ

adopt

ꢀ

safety

ꢀ

measures

ꢀ

so

ꢀ

that

ꢀ

these

ꢀ

kinds

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of

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accidents

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or

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events

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cannot

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occur.

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Such

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measures

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include

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but

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are

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not

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limited

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to

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protective

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circuits

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and

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error

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prevention

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circuits

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for

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safe

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design,

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redundant

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design,

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and

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structural

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design.

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5,In

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all

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applicable

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must

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exported

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obtaining

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export

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license

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from

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authorities

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concerned

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in

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accordance

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with

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the

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above

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law.

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6,

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No

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prior

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written

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permission

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of

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Semiconductor

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CO.,

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LTD.

ꢀ  

7,

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(including

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circuit

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diagrams

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and

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circuit

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parameters)

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herein

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only;

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rights

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described

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without

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notice

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due

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to

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product/technology

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improvement,etc.

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When

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designing

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equipment,

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refer

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to

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the

ꢀ

“Delivery

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Specification”

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for

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product

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that

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you

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Intend

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to

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use.

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9,

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this

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catalog

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provides

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information

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as

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of

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Sep.2014. Specifications

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and

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information

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herein

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are

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subject

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to

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change

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without

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notice.

ꢀ