Winsok-Semicon-WSD3066DN33
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WS
D306
6
DN
N-Ch MOSFET
General Description
Product Summery
The WSD306
6
DN is the highest
performance trench
N-ch MOSFETs with
extreme high cell
density , which provide
excellent RDSON and
gate charge for most
of the synchronous buck
converter
applications .
BVDSS
RDSON
ID
30V
5.5
m
Ω
45
A
Applications
The WSD306
6
DN meet the RoHS and
Green Product
requirement , 100% EAS
guaranteed with
full function reliability
approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
DFN
3
.3
X3
.3-8
Pin Configuration
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
30
Units
V
Drain-Source Voltage
V
GS
Gate-Sou
r
ce Voltage
±
20
V
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
5
0
4
5
A
A
20
A
1
6
A
13
0
1
25
5
0
A
I
DM
@T
C
=25
℃
Avalanche Energy
,Single Pulse (L=0.
1
mH)
3
Avalanche Current
,Single pulse(L=0.
1
mH)
3
EAS
I
AS
mJ
A
Total Power Dissipation
4
Total Power Dissipation
4
W
W
℃
℃
45
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
1.78
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
7
0
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
2.
7
R
θ
JC
—
Dec.2014
Page 1
WS
D306
6
DN
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
—
—
1.
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=
4
0A
0.028
4.
7
—
V/
℃
5.
7
7.6
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
5.8
V
GS
=4.5V , I
D
=
20
A
V
GS(th)
Gate Threshold Voltage
1.
8
-6.
0
6
—
2.5
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
30
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
44
V
DS
=5V , I
D
=
2
0A
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
1
.0
1
.
1
3
8.
5
1
3.4
1
3.7
34
Ω
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
2
7.5
9.6
V
DS
=15V , V
GS
=4.5V , I
D
=
2
0
A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
9.4
18.5
1
1.3
62.5
V
DD
=15V , V
G
en
=10V ,
2
1
R
G
=
6
Ω
,
I
D
=
1
A
, R
L
=1
5
Ω.
114
43
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
23.5
1
320
61
0
1
4
20
64
0
1
50
C
iss
C
oss
C
rss
Input Capacitance
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
1
12
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
V
DD
=25V , L=0.
5
mH , I
AS
=2
0
A
—
125
—
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
1
5
V
G
=V
D
=0V , Force Current
45
—
—
A
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
—
1
V
—
2
3
7
—
—
nS
nC
I
F
=
4
0A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper
,t<10sec
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.
5
mH,I
AS
=
20
A
4.The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page
2
WS
D306
6
DN
N-Ch MOSFET
Typical Characteristics
Power Dissipation
Drain Current
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
T
C
=25
o
C
20 40 60 80
100 120 140 160
T
C
=25
o
C,V
G
=10V
0
0
20 40 60 80
100 120 140 160
T
j
– Junction Temperature (
°
C)
T
j
– Junction
T
e
m
perature (
°
C)
Safe Operation Area
Thermal Transient Impedance
600
100
3
1
Duty = 0.5
0.2
0.1
0.1
0.01
1E-3
1E-4
1E-5
0.05
0.02
0.01
1ms
10
10ms
DC
Single Pulse
T
C
=25
o
C
R
θ
JC
:2
o
C/W
1
0.01
0.1
1
10
100 300
1E-6
1E-5
1E-4
1E-3
0.01
0.1
V
DS
– Drain – Source Voltage (V)
Square Wave Pulse Duration (sec)
Dec.2014
Page
3
WS
D306
6
DN
N-Ch MOSFET
Output Characteristics
Drain-Source On Resistance
200
175
150
125
100
75
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
GS
=4,5,6,7,8,9,10V
3.5V
V
GS
=4.5V
V
GS
=10V
50
3V
25
2.5V
0
0.0
0
40
80
120
160
200
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-Source Voltage (V)
I
D
– Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
18
15
12
9
1.4
1.2
1.0
0.8
0.6
0.4
I
DS
=20A
I
DS
=250
µ
A
6
3
0
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
Dec.2014
Page
4
WS
D306
6
DN
N-Ch MOSFET
Drain-Source On Resistance
Source-Drain Diode Forward
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
200
100
V
GS
= 10V
I
DS
= 20A
T
j
=150
o
C
10
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 2.3m
Ω
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-50 -25
0
25 50 75
100 125 150
T
j
– Junction Temperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
4800
4200
3600
3000
2400
1800
1200
600
10
Frequency=1MHz
V
DS
=15V
I
DS
=20A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
15
Crss
5
0
0
10
20
30
40
50
60
0
10
20
25
30
V
DS
– Drain – Source Voltage (V)
Q
G
– Gate Charge (nC)
Dec.2014
Page
5
Attention
ꢀ
1,
ꢀ
Any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
do
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not
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have
ꢀ
specifications
ꢀ
that
ꢀ
can
ꢀ
handle
ꢀ
applications
ꢀ
that
ꢀ
require
ꢀ
extremely
ꢀ
high
ꢀ
levels
ꢀ
of
ꢀ
reliability,
ꢀ
such
ꢀ
as
ꢀ
life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
ꢀ
or
ꢀ
other
ꢀ
applications
ꢀ
whose
ꢀ
failure
ꢀ
can
ꢀ
be
ꢀ
reasonably
ꢀ
expected
ꢀ
to
ꢀ
result
ꢀ
in
ꢀ
serious
ꢀ
physical
ꢀ
and/or
ꢀ
material
ꢀ
damage.
ꢀ ꢀ
Consult
ꢀ
with
ꢀ
your
ꢀ
Winsok
ꢀ
power
ꢀ
representative
ꢀ
nearest
ꢀ
you
ꢀ
before
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using
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any
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
in
ꢀ
such
ꢀ
applications.
ꢀ
2,Winsok
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power
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assumes
ꢀ
no
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responsibility
ꢀ
for
ꢀ
equipment
ꢀ
failures
ꢀ
that
ꢀ
result
ꢀ
from
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using
ꢀ
products
ꢀ
at
ꢀ
values
ꢀ
that
ꢀ
exceed,
ꢀ ꢀ
even
ꢀ
momentarily,
ꢀ
rated
ꢀ
values
ꢀ
(such
ꢀ
as
ꢀ
maximum
ꢀ
ratings,
ꢀ
operating
ꢀ
condition
ꢀ
ranges,
ꢀ
or
ꢀ
other
ꢀ
parameters)
ꢀ
listed
ꢀ
in
ꢀ
products
ꢀ
specifications
ꢀ
of
ꢀ
any
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and
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all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein.
ꢀ
3,
ꢀ
Specifications
ꢀ
of
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
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contained
ꢀ
herein
ꢀ
stipulate
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
ꢀ
products
ꢀ
in
ꢀ
the
ꢀ
independent
ꢀ
state,
ꢀ
and
ꢀ
are
ꢀ
not
ꢀ
guarantees
ꢀ
of
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
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products
ꢀ
as
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
T
o
ꢀ
verify
ꢀ
symptoms
ꢀ
and
ꢀ
states
ꢀ
that
ꢀ
cannot
ꢀ
be
ꢀ
evaluated
ꢀ
in
ꢀ
an
ꢀ
independent
ꢀ
device,
ꢀ
the
ꢀ
customer
ꢀ
should
ꢀ
always
ꢀ
evaluate
ꢀ
and
ꢀ
test
ꢀ
devices
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
4,
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
strives
ꢀ
to
ꢀ
supply
ꢀ
high
Ͳ
quality
ꢀ
high
Ͳ
reliability
ꢀ
products.
ꢀ
However,
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
semiconductor
ꢀ
products
ꢀ
fail
ꢀ
with
ꢀ
some
ꢀ
probability.
ꢀ
It
ꢀ
is
ꢀ
possible
ꢀ
that
ꢀ
these
ꢀ
probabilistic
ꢀ
failures
ꢀ
could
ꢀ
give
ꢀ
rise
ꢀ
to
ꢀ
accidents
ꢀ
or
ꢀ
events
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that
ꢀ
could
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endanger
ꢀ
human
ꢀ
lives
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that
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could
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give
ꢀ
rise
ꢀ
to
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smoke
ꢀ
or
ꢀ
fire,
ꢀ
or
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that
ꢀ
could
ꢀ
cause
ꢀ
damage
ꢀ
to
ꢀ
other
ꢀ
property.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
adopt
ꢀ
safety
ꢀ
measures
ꢀ
so
ꢀ
that
ꢀ
these
ꢀ
kinds
ꢀ
of
ꢀ
accidents
ꢀ
or
ꢀ
events
ꢀ
cannot
ꢀ
occur.
ꢀ
Such
ꢀ
measures
ꢀ
include
ꢀ
but
ꢀ
are
ꢀ
not
ꢀ
limited
ꢀ
to
ꢀ
protective
ꢀ
circuits
ꢀ
and
ꢀ
error
ꢀ
prevention
ꢀ
circuits
ꢀ
for
ꢀ
safe
ꢀ
design,
ꢀ
redundant
ꢀ
design,
ꢀ
and
ꢀ
structural
ꢀ
design.
ꢀ
5,In
ꢀ
the
ꢀ
event
ꢀ
that
ꢀ
any
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or
ꢀ
all
ꢀ
Winsok
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power
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products(including
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technical
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data,
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services)
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described
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or
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contained
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herein
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are
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controlled
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under
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any
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of
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applicable
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local
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export
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control
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laws
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and
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regulations,
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such
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products
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must
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not
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be
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exported
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without
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obtaining
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the
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export
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license
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from
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the
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authorities
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concerned
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in
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accordance
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with
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the
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above
ꢀ
law.
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6,
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No
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part
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of
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this
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publication
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may
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be
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reproduced
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transmitted
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in
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any
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form
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by
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means,
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or
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mechanical,
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including
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photocopying
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recording,
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or
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retrieval
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prior
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written
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permission
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of
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Winsok
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power
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Semiconductor
ꢀ
CO.,
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LTD.
ꢀ
7,
ꢀ
Information
ꢀ
(including
ꢀ
circuit
ꢀ
diagrams
ꢀ
and
ꢀ
circuit
ꢀ
parameters)
ꢀ
herein
ꢀ
is
ꢀ
for
ꢀ
example
ꢀ
only;
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it
ꢀ
is
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not
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guaranteed
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for
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volume
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production. Winsok
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believes
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information
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herein
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is
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accurate
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reliable,
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but
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no
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are
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made
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or
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implied
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regarding
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its
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use
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or
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any
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infringements
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of
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rights
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or
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other
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rights
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of
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third
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parties.
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Any
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and
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all
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information
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described
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or
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contained
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herein
ꢀ
are
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subject
ꢀ
to
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change
ꢀ
without
ꢀ
notice
ꢀ
due
ꢀ
to
ꢀ
product/technology
ꢀ
improvement,etc.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
refer
ꢀ
to
ꢀ
the
ꢀ
“Delivery
ꢀ
Specification”
ꢀ
for
ꢀ
the
ꢀ
Winsok
ꢀ
power
ꢀ
product
ꢀ
that
ꢀ
you
ꢀ ꢀ
Intend
ꢀ
to
ꢀ
use.
ꢀ
9,
ꢀ
this
ꢀ
catalog
ꢀ
provides
ꢀ
information
ꢀ
as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice.
ꢀ
