Winsok-Semicon-WSD3070DN
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WSD3070DN
N-Ch MOSFET
Product Summery
Features
·
·
·
·
100% UIS + R
g
T
e
sted
BVDSS
RDSON
ID
Avalanche Rated
25
V
3.4
m
Ω
(max.)
7
0A
Reliable and Rugged
Lead Free an
d
G
reen Device
s
A
vailable
(RoH
S
C
ompliant)
DFN3.3×3.3-8-EP Pin
Configuration
Applications
Power Management in Notebook Computer,
·
Portable Equipment and Battery Powered
Systems.
Absolute Maximum Ratings
(T
A
= 25
°
C Unless Otherwise Noted)
Symbol
Parameter
R
a
t
ing
Unit
Common Ratings
V
DSS
V
G
S
S
T
J
Drain-Source Voltage
Gate-Source Voltage
25
±
12
150
-55 to 150
7
0
a
V
Maximum Junction
T
e
mperature
Storage Temperature Range
°
C
T
S
T
G
I
S
Diode Continuous Forward Current
T
C
=25
°
C
T
C
=25
°
C
T
C
=100
°
C
T
C
=25
°
C
T
C
=25
°
C
T
C
=100
°
C
Steady
S
t
ate
T
A
=25
°
C
T
A
=70
°
C
T
A
=25
°
C
T
A
=70
°
C
t
£
10s
7
0
a
I
D
Continuous Drain Current
Pulsed Drain Current
A
6
0
I
DM
P
D
200
b
62.5
25
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Continuous Drain Current
W
°
C/W
A
2
R
q
JC
I
D
20
16
1.78
1.14
35
P
D
Maximum Power Dissipation
W
Thermal Resistance-Junction to Ambient
°
C/W
R
q
JA
Steady
S
t
ate
L=0.1mH
L=0.1mH
70
c
I
AS
Avalanche Current, Single pulse
Avalanche Energ
y
, S
i
ngle pulse
50
A
c
E
AS
125
mJ
Note a
：
Package is limited by 50A.
Note b
：
Pulse width is limited by maximum junction temperature.
Note c
：
UIS tested and pulse width is limited by ma
x
i
mum junction temperature 150
o
C (initial temperature T
J
= 25
o
C).
Dec.2014
Page 1
WSD3070DN
N-Ch MOSFET
Electrical Characteristics
(T
A
= 25
°
C Unless Otherwise Noted)
Symbol
Pa
r
a
m
e
t
er
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BV
D
SS
Drain-Source Breakdown Voltage
25
–
–
–
1
V
V
GS
=0V, I
DS
=250
m
A
V
DS
=24V, V
GS
=0V
T
J
=
8
5
°
C
–
I
D
S
S
Zero Gate Voltage Drain Current
m
A
–
–
30
1
.
1
±
10
3
.
4
–
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
0.5
0.8
–
V
V
DS
=V
G
S
, I
DS
=250
m
A
V
GS
=
±
12V, V
D
S
=0V
V
GS
=4.5V, I
DS
=20A
T
J
=
1
25
°
C
–
–
–
–
–
m
A
2.5
3.9
3.0
74
d
R
D
S
(
ON)
Drain-Source On-state Resistance
m
W
V
GS
=2.5V, I
DS
=20A
V
DS
=5V, I
DS
=20A
4
.
0
–
Gfs
Forward Transconductance
S
Diode Characteristics
d
V
SD
t
rr
Diode Forward Voltage
I
SD
=20A, V
G
S
=0V
–
–
–
–
–
0
.
7
14.8
7
.
1
1.1
V
ns
nC
W
Reverse Recovery Time
Charge Time
–
–
–
–
t
a
I
F
=20A, dl
SD
/dt=100A/
m
s
t
b
Discharge Time
7
.
7
Q
rr
Reverse Recovery Charge
3
.
9
Dynamic Characteristics
e
R
G
C
iss
C
oss
C
r
s
s
t
d
(
ON)
t
r
Gate Resistance
V
GS
=0V,V
DS
=0V, F=1MHz
–
–
–
–
–
–
–
–
0.85
4920
510
350
16.6
12.2
135
48
–
–
Input Capacitance
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
–
pF
–
31
23
244
87
V
D
D
=15V, R
L
=15
W
,
I
DS
=1A, V
GEN
=10V,
R
G
=6
W
ns
t
d(OFF)
Turn-off Delay Time
t
f
Turn-off Fall Time
Gate Charge Characteristics
e
V
DS
=15V, V
GS
=4.5V,
I
DS
=20A
Q
g
Total Gate Charge
–
47
66
Q
g
Q
gth
Q
gs
Q
gd
Total Gate Charge
–
–
–
–
96
2.75
5
.
5
16
134
3.8
7.7
22
nC
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=15V, V
GS
=10V,
I
DS
=20A
Note d
：
Pulse test; pulse width
£
300
m
s, duty cycle
£
2%.
Note e
：
Guaranteed by design, not subject to production testing.
Dec.2014
Page
2
WSD3070DN
N-Ch MOSFET
Typical Operating Characteristics
Power Dissipation
Drain Current
70
60
50
40
30
20
10
0
60
50
40
30
20
10
T
C
=25
o
C
0
T
C
=25
o
C,V
G
=10V
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
j
– Junction Temperature (
°
C)
T
j
– Junction
T
e
m
perature (
°
C)
Safe Operation Area
Thermal Transient Impedance
500
100
3
1
Duty = 0.5
0.2
it
0.1
m
i
0.1
0.01
1E-3
1E-4
1E-5
L
)
0.05
on
(
0.02
0.01
s
d
R
1ms
10
Single Pulse
10ms
DC
10
T
C
=25
o
C
R
:2
o
C/W
1
0.01
0.1
1
100 300
1E-6
1E-5
1E-4
1E-3
0.01
0.1
V
DS
– Drain – Source Voltage (V)
Square Wave Pulse Duration (sec)
Dec.2014
Page
3
WSD3070DN
N-Ch MOSFET
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
6
5
4
3
2
1
0
150
125
100
75
V
GS
=3,4,5,6,7,8,9,10V
2V
V
GS
=2.5V
V
GS
=4.5V
50
25
1.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
30
60
90
120
150
V
DS
– Drain-Source Voltage (V)
I
D
– Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
15
12
9
I
DS
=250
m
A
I
DS
=20A
6
3
0
-50 -25
0
25 50 75
100 125 150
0
1
2
3
4
5
6
7
8
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
Dec.2014
Page
4
WSD3070DN
N-Ch MOSFET
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
=4.5V
I
DS
=20A
100
10
1
T
j
=150
o
C
T
j
=25
o
C
R
ON
@T
j
=25
o
C: 2.5m
W
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25
0
25 50 75
100 125 150
T
j
– Junction Temperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
7500
6250
5000
3750
2500
1250
0
10
9
8
7
6
5
4
3
2
1
0
Frequency=1MHz
V
DS
=15V
I
DS
=20A
Ciss
Coss
Crss
0
20
40
60
80
100
0
5
10
15
20
25
30
V
DS
– Drain – Source Voltage (V)
Q
G
– Gate Charge (nC)
Dec.2014
Page
5
WSD3070DN
N-Ch MOSFET
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
100 C
Pb-Free Assembly
150 C
°
°
Temperature min (T
smin
)
Temperature max (T
smax
Time (T
smin
to T
smax
) (t
s
)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(T
smax
to T
P
)
3 C/second
max.
°
3 C/second max.
°
Liquidous temperature (T
L
)
Time at liquidous (t
L
)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(T
p
)*
See Classification Temp in table 1
See Classification Temp in table 2
Time (t )** within 5 C of the specified
classification temperature (T
c
)
°
P
20** seconds
30** seconds
Average ramp-down rate (T
p
to T
smax
)
6 C/second
max.
°
6 C/second
max.
°
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
°
* Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process
–
Classification Temperatures (Tc)
Volume mm
3
350
Package
Thickness
Volume mm
3
<350
<2.5 mm
235 C
220 C
°
°
2.5 mm
220 C
220 C
³
°
°
Table 2. Pb-free Process
–
Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm
3
Volume mm
3
350-2000
260
°
C
Volume mm
3
>2000
<350
260
°
C
260
°
C
1.6 mm
–
2.5 mm
³
2.5 mm
260
°
C
250
°
C
250
°
C
245
°
C
245
°
C
245
°
C
Reliability Test Program
T
e
st item
Method
JESD-22, B102
JESD-22, A108
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
SOLDERABILITY
HTRB
5 Sec, 245
°
C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100
%
RH, 2atm, 121
°
C
500 Cycles, -65
°
C~150
°
C
HTGB
PCT
TCT
Dec.2014
Page
8
Attention
ꢀ
1,
ꢀ
Any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
do
ꢀ
not
ꢀ
have
ꢀ
specifications
ꢀ
that
ꢀ
can
ꢀ
handle
ꢀ
applications
ꢀ
that
ꢀ
require
ꢀ
extremely
ꢀ
high
ꢀ
levels
ꢀ
of
ꢀ
reliability,
ꢀ
such
ꢀ
as
ꢀ
life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
ꢀ
or
ꢀ
other
ꢀ
applications
ꢀ
whose
ꢀ
failure
ꢀ
can
ꢀ
be
ꢀ
reasonably
ꢀ
expected
ꢀ
to
ꢀ
result
ꢀ
in
ꢀ
serious
ꢀ
physical
ꢀ
and/or
ꢀ
material
ꢀ
damage.
ꢀ ꢀ
Consult
ꢀ
with
ꢀ
your
ꢀ
Winsok
ꢀ
power
ꢀ
representative
ꢀ
nearest
ꢀ
you
ꢀ
before
ꢀ
using
ꢀ
any
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
in
ꢀ
such
ꢀ
applications.
ꢀ
2,Winsok
ꢀ
power
ꢀ
assumes
ꢀ
no
ꢀ
responsibility
ꢀ
for
ꢀ
equipment
ꢀ
failures
ꢀ
that
ꢀ
result
ꢀ
from
ꢀ
using
ꢀ
products
ꢀ
at
ꢀ
values
ꢀ
that
ꢀ
exceed,
ꢀ ꢀ
even
ꢀ
momentarily,
ꢀ
rated
ꢀ
values
ꢀ
(such
ꢀ
as
ꢀ
maximum
ꢀ
ratings,
ꢀ
operating
ꢀ
condition
ꢀ
ranges,
ꢀ
or
ꢀ
other
ꢀ
parameters)
ꢀ
listed
ꢀ
in
ꢀ
products
ꢀ
specifications
ꢀ
of
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein.
ꢀ
3,
ꢀ
Specifications
ꢀ
of
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
stipulate
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
ꢀ
products
ꢀ
in
ꢀ
the
ꢀ
independent
ꢀ
state,
ꢀ
and
ꢀ
are
ꢀ
not
ꢀ
guarantees
ꢀ
of
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
ꢀ
products
ꢀ
as
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
T
o
ꢀ
verify
ꢀ
symptoms
ꢀ
and
ꢀ
states
ꢀ
that
ꢀ
cannot
ꢀ
be
ꢀ
evaluated
ꢀ
in
ꢀ
an
ꢀ
independent
ꢀ
device,
ꢀ
the
ꢀ
customer
ꢀ
should
ꢀ
always
ꢀ
evaluate
ꢀ
and
ꢀ
test
ꢀ
devices
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
4,
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
strives
ꢀ
to
ꢀ
supply
ꢀ
high
Ͳ
quality
ꢀ
high
Ͳ
reliability
ꢀ
products.
ꢀ
However,
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
semiconductor
ꢀ
products
ꢀ
fail
ꢀ
with
ꢀ
some
ꢀ
probability.
ꢀ
It
ꢀ
is
ꢀ
possible
ꢀ
that
ꢀ
these
ꢀ
probabilistic
ꢀ
failures
ꢀ
could
ꢀ
give
ꢀ
rise
ꢀ
to
ꢀ
accidents
ꢀ
or
ꢀ
events
ꢀ
that
ꢀ
could
ꢀ
endanger
ꢀ
human
ꢀ
lives
ꢀ
that
ꢀ
could
ꢀ
give
ꢀ
rise
ꢀ
to
ꢀ
smoke
ꢀ
or
ꢀ
fire,
ꢀ
or
ꢀ
that
ꢀ
could
ꢀ
cause
ꢀ
damage
ꢀ
to
ꢀ
other
ꢀ
property.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
adopt
ꢀ
safety
ꢀ
measures
ꢀ
so
ꢀ
that
ꢀ
these
ꢀ
kinds
ꢀ
of
ꢀ
accidents
ꢀ
or
ꢀ
events
ꢀ
cannot
ꢀ
occur.
ꢀ
Such
ꢀ
measures
ꢀ
include
ꢀ
but
ꢀ
are
ꢀ
not
ꢀ
limited
ꢀ
to
ꢀ
protective
ꢀ
circuits
ꢀ
and
ꢀ
error
ꢀ
prevention
ꢀ
circuits
ꢀ
for
ꢀ
safe
ꢀ
design,
ꢀ
redundant
ꢀ
design,
ꢀ
and
ꢀ
structural
ꢀ
design.
ꢀ
5,In
ꢀ
the
ꢀ
event
ꢀ
that
ꢀ
any
ꢀ
or
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products(including
ꢀ
technical
ꢀ
data,
ꢀ
services)
ꢀ
described
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or
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contained
ꢀ
herein
ꢀ
are
ꢀ
controlled
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under
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any
ꢀ
of
ꢀ
applicable
ꢀ
local
ꢀ
export
ꢀ
control
ꢀ
laws
ꢀ
and
ꢀ
regulations,
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such
ꢀ
products
ꢀ
must
ꢀ
not
ꢀ
be
ꢀ
exported
ꢀ
without
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obtaining
ꢀ
the
ꢀ
export
ꢀ
license
ꢀ
from
ꢀ
the
ꢀ
authorities
ꢀ
concerned
ꢀ
in
ꢀ
accordance
ꢀ
with
ꢀ
the
ꢀ
above
ꢀ
law.
ꢀ
6,
ꢀ
No
ꢀ
part
ꢀ
of
ꢀ
this
ꢀ
publication
ꢀ
may
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be
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reproduced
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or
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transmitted
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in
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any
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form
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or
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by
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any
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means,
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electronic
ꢀ
or
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mechanical,
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including
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photocopying
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and
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recording,
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information
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storage
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or
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retrieval
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system,
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or
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otherwise,
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without
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the
ꢀ
prior
ꢀ
written
ꢀ
permission
ꢀ
of
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
7,
ꢀ
Information
ꢀ
(including
ꢀ
circuit
ꢀ
diagrams
ꢀ
and
ꢀ
circuit
ꢀ
parameters)
ꢀ
herein
ꢀ
is
ꢀ
for
ꢀ
example
ꢀ
only;
ꢀ
it
ꢀ
is
ꢀ
not
ꢀ
guaranteed
ꢀ
for
ꢀ
volume
ꢀ
production. Winsok
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power
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believes
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information
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herein
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is
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accurate
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and
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reliable,
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but
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no
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guarantees
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are
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made
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or
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implied
ꢀ
regarding
ꢀ
its
ꢀ
use
ꢀ
or
ꢀ
any
ꢀ
infringements
ꢀ
of
ꢀ
intellectual
ꢀ
property
ꢀ
rights
ꢀ
or
ꢀ
other
ꢀ
rights
ꢀ
of
ꢀ
third
ꢀ
parties.
ꢀ
8,
ꢀ
Any
ꢀ
and
ꢀ
all
ꢀ
information
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice
ꢀ
due
ꢀ
to
ꢀ
product/technology
ꢀ
improvement,etc.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
refer
ꢀ
to
ꢀ
the
ꢀ
“Delivery
ꢀ
Specification”
ꢀ
for
ꢀ
the
ꢀ
Winsok
ꢀ
power
ꢀ
product
ꢀ
that
ꢀ
you
ꢀ ꢀ
Intend
ꢀ
to
ꢀ
use.
ꢀ
9,
ꢀ
this
ꢀ
catalog
ꢀ
provides
ꢀ
information
ꢀ
as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice.
ꢀ
