Winsok-Semicon-WSD3095DN56

WSD30

95

DN56  

N-

Channel MOSFET  

General Description  

Product Summery  

The WSD30

95

DN56 is the highest performance  

trench N-ch

 

MOSFET with extreme high cell  

density , which provide excellent RDSON and gate  

charge for most of the synchronous buck converter  

applications .  

BVDSS  

RDSON  

3.5

mΩ  

ID  

95

A  

30V  

The WSD30

95

DN56 meet the RoHS and Green  

Product requirement

 

100% EAS guaranteed with  

full function

 

reliability approved.  

Applications  



Battery protection  



Load switch  



Uninterruptible power supply  

Features  



Advanced high cell density Trench technology  



Super Low Gate Charge  

DFN5X6-8

Pin Configuration  



Excellent CdV/dt effect decline  



100% EAS Guaranteed  



Green Device Available  

Absolute Maximum Ratings (T

C

=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Rating  

Units  

V

V

DS  

Drain-Source Voltage  

30  

V

GS  

Gate-Source Voltage  

±20  

V

Continuous Drain Current, V

GS

@ 10V

1  

Continuous Drain Current, V

GS

@ 10V

1  

Continuous Drain Current, V

GS

@ 10V

1  

Continuous Drain Current, V

GS

@ 10V

1  

Pulsed Drain Current

2  

90  

A

I

D

@T

C

=25

℃

 

I

D

@T

C

=100

℃  

I

D

@T

A

=25

℃  

I

D

@T

A

=70

℃  

I

DM  

51  

A

15  

12  

A

A

160  

A

EAS  

Single Pulse Avalanche Energy

3  

Avalanche Current  

115.2  

48  

mJ  

A

I

AS  

Total Power Dissipation

4  

59  

W

P

D

@T

C

=25

℃  

P

D

@T

A

=25

℃  

T

STG  

Total Power Dissipation

4  

2

W

-55 to 150  

-55 to 150  

62  

Storage Temperature Range  

Operating Junction Temperature Range  

Thermal Resistance Junction-Ambient

1  

Thermal Resistance Junction-Case

1  

℃

℃

℃

/W  

℃

/W  

T

J  

R

θJA  

R

θJC  

2.1  

Page 1  

Rev 2: Apr.2019  

WSD30

95

DN56  

N-

Channel MOSFET  

Electrical Characteristics (T

J

=25

℃

, unless otherwise noted)  

Symbol  

BVDSS  

Parameter  

Conditions  

Min.  

30  

—  

—  

—  

1.0  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

Typ. Max. Unit  

Drain-Source Breakdown Voltage  

BVDSS Temperature Coefficient  

V

GS

=0V , I

D

=250uA  

Reference to 25

℃

, I

D

=1mA  

V

GS

=10V , I

D

=30A  

V

GS

=4.5V , I

D

=15A  

—  

0.028  

3.5  

6.5  

1.6  

-6.16  

—  

—  

—  

V

△

BVDSS/

△

TJ  

V/

℃  

5.5  

8.5  

2.5  

—  

RDS(ON)  

Static Drain-Source On-Resistance  

mΩ  

VGS(th)  

Gate Threshold Voltage  

Temperature Coefficient  

V

V

GS

=V

DS

, I

D

=250uA  

△

V

GS(th)  

mV/

℃  

1

V

DS

=24V , V

GS

=0V , T

J

=25

℃  

V

DS

=24V , V

GS

=0V , T

J

=55

℃  

V

GS

=±20V , V

DS

=0V  

IDSS  

Drain-Source Leakage Current  

uA  

—  

5

IGSS  

gfs  

Gate-Source Leakage Current  

Forward Transconductance  

Gate Resistance  

—  

±100  

—  

nA  

S

V

DS

=5V , I

D

=30A  

22  

R

g  

V

DS

=0V , V

GS

=0V , f=1MHz  

1.7  

20  

3.4  

—  

Ω

Q

g  

Total Gate Charge (4.5V)  

Gate-Source Charge  

Gate-Drain Charge  

V

DS

=15V , V

GS

=4.5V , I

D

=15A  

nC  

ns  

Q

gs  

7.6  

7.2  

7.8  

15  

—  

Q

gd  

Td(on)  

T

r  

—  

Turn-On Delay Time  

Rise Time  

—  

—  

V

DD

=15V , V

GS

=10V , R

G

=3.3Ω  

I

D

=15A  

Td(off)  

T

f  

Turn-Off Delay Time  

Fall Time  

37.3  

10.6  

2295  

267  

210  

—  

—  

—  

C

iss  

Coss  

Crss  

I

S  

Input Capacitance  

—  

V

DS

=15V , V

GS

=0V , f=1MHz  

pF  

Output Capacitance  

—  

Reverse Transfer Capacitance  

Continuous Source Current

1,5  

Pulsed Source Current

2,5  

Diode Forward Voltage

2  

Reverse Recovery Time  

Reverse Recovery Charge  

—  

80  

160  

1.2  

—  

A

A

V

G

=V

D

=0V , Force Current  

V

GS

=0V , I

S

=1A , T

J

=25

℃  

ISM  

VSD  

t

rr  

—  

—  

V

14  

nS  

nC  

IF=30A , dI/dt=100A/µs ,T

J

=25

℃  

Q

rr  

5

—  

Note :  

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.  

2.The data tested by pulsed , pulse width .The EAS data shows Max. rating .  

3.The test cond

≦

300us , duty cycle ition is VDD=25

≦

V,V 2%GS =10V,L=0.1mH,IAS=53.8A  

4.The power dissipation is limited by 175

℃

junction temperature  

5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.  

Rev 2: Apr.2019  

Page

2

 

WSD30

95

DN56  

N-

Channel MOSFET  

Typical Characteristics  

180  

9

8

6

5

3

I

D

=12A  

150  

120  

90  

V

GS

=10V  

V

GS

=7V  

V

GS

=5V  

V

GS

=4.5V  

V

GS

=3V  

60  

30  

0

0

0.5  

1

1.5  

2

2.5  

3

2

4

6

8

10  

V

DS

, Drain-to-Source Voltage (V)  

V

GS

(V)  

Fig.1 Typical Output Characteristics  

Fig.2 On-Resistance vs. G-S Voltage  

10  

8

12  

9

I

D

=15A  

T

J

=150

℃

 

T

J

=25

℃  

6

V

DS

=15V  

V

DS

=24V  

6

4

3

2

0

0

0

0.3  

0.6  

0.9  

1.2  

0

6

12  

18  

24  

30  

36  

42  

V

SD

, Source-to-Drain Voltage (V)  

Q

G

, Total Gate Charge (nC)  

Fig.3 Forward Characteristics of Reverse  

Fig.4 Gate-Charge Characteristics  

1.8  

1.4  

1.0  

0.6  

0.2  

1.8  

1.4  

1

0.6  

0.2  

-50  

0

50  

100  

150  

-55  

-5  

40  

85  

130  

1

50  

T

J

,Ju

n

ction Tempe

ra

ture (

℃

)  

T

J

,Junction Temperature  

Fig.6 Normalized R

DSON

vs. T

J  

Fig.5 Normalized V

GS(th)

vs. T

J  

Page

3  

Rev 2: Apr.2019  

WSD30

95

DN56  

N-

Channel MOSFET  

10000  

1000  

100  

F=1.0MHz  

Ciss  

Coss  

Crss  

10  

1

5

9

13  

17  

21  

25  

V

DS ,

Drain to Source Voltage (V)  

Fig.7 Capacitance  

Fig.8 Safe Operating Area  

1

DUTY=0.5  

0.2  

0.1  

0.1  

0.01  

0.05  

0.02  

0.01  

P

DM  

T

ON  

SINGLE  

T

D =

T

ON

/T  

T

Jpeak

=

T

C

+P

D

M

XR

θJC  

0.001  

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

10  

t , Pulse Width (s)  

Fig.9 Normalized Maximum Transient Thermal Impedance  

1

BV

DSS  

BV

DSS

-V

DD  

E

A

S

=

L

x

I

I

A

x  

S

V

D

D  

S

9

90%  

B

BV

D  

S

S

S

S  

V

D

D  

D

I

A

A  

S

1

10%  

V

G

G  

S

T

d

d  

(

T

r

r  

T

T

d  

(o

f

ff

)

)  

T

f

f  

on)  

T

o

o  

n

T

o

o  

f

ff  

V

G

G  

S

Fig.10 Switching Time Waveform  

Fig.11 Unclamped Inductive Switching Waveform  

Rev 2: Apr.2019  

Page

4  

Attention

ꢀ

 

1,

ꢀ

Any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

do

ꢀ

not

ꢀ

have

ꢀ

specifications

ꢀ

that

ꢀ

can

ꢀ

handle

ꢀ  

applications

ꢀ

that

ꢀ

require

ꢀ

extremely

ꢀ

high

ꢀ

levels

ꢀ

of

ꢀ

reliability,

ꢀ

such

ꢀ

as

ꢀ

life

Ͳ

support

ꢀ

systems,

ꢀ

aircraft’s

ꢀ

control

ꢀ

systems,

ꢀ

or

ꢀ  

other

ꢀ

applications

ꢀ

whose

ꢀ

failure

ꢀ

can

ꢀ

be

ꢀ

reasonably

ꢀ

expected

ꢀ

to

ꢀ

result

ꢀ

in

ꢀ

serious

ꢀ

physical

ꢀ

and/or

ꢀ

material

ꢀ

damage.

ꢀ ꢀ  

Consult

ꢀ

with

ꢀ

your

ꢀ

Winsok

ꢀ

power

ꢀ

representative

ꢀ

nearest

ꢀ

you

ꢀ

before

ꢀ

using

ꢀ

any

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ  

contained

ꢀ

herein

ꢀ

in

ꢀ

such

ꢀ

applications.

ꢀ  

2,Winsok

ꢀ

power

ꢀ

assumes

ꢀ

no

ꢀ

responsibility

ꢀ

for

ꢀ

equipment

ꢀ

failures

ꢀ

that

ꢀ

result

ꢀ

from

ꢀ

using

ꢀ

products

ꢀ

at

ꢀ

values

ꢀ

that

ꢀ

exceed,

ꢀ ꢀ  

even

ꢀ

momentarily,

ꢀ

rated

ꢀ

values

ꢀ

(such

ꢀ

as

ꢀ

maximum

ꢀ

ratings,

ꢀ

operating

ꢀ

condition

ꢀ

ranges,

ꢀ

or

ꢀ

other

ꢀ

parameters)

ꢀ

listed

ꢀ

in

ꢀ  

products

ꢀ

specifications

ꢀ

of

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein.

ꢀ  

3,

ꢀ

Specifications

ꢀ

of

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

stipulate

ꢀ

the

ꢀ

performance,

ꢀ  

characteristics,

ꢀ

and

ꢀ

functions

ꢀ

of

ꢀ

the

ꢀ

described

ꢀ

products

ꢀ

in

ꢀ

the

ꢀ

independent

ꢀ

state,

ꢀ

and

ꢀ

are

ꢀ

not

ꢀ

guarantees

ꢀ

of

ꢀ

the

ꢀ  

performance,

ꢀ

characteristics,

ꢀ

and

ꢀ

functions

ꢀ

of

ꢀ

the

ꢀ

described

ꢀ

products

ꢀ

as

ꢀ

mounted

ꢀ

in

ꢀ

the

ꢀ

customer’s

ꢀ

products

ꢀ

or

ꢀ  

equipment.

ꢀ

T

o

ꢀ

verify

ꢀ

symptoms

ꢀ

and

ꢀ

states

ꢀ

that

ꢀ

cannot

ꢀ

be

ꢀ

evaluated

ꢀ

in

ꢀ

an

ꢀ

independent

ꢀ

device,

ꢀ

the

ꢀ

customer

ꢀ

should

ꢀ

always

ꢀ  

evaluate

ꢀ

and

ꢀ

test

ꢀ

devices

ꢀ

mounted

ꢀ

in

ꢀ

the

ꢀ

customer’s

ꢀ

products

ꢀ

or

ꢀ

equipment.

ꢀ  

4,

ꢀ

Winsok

ꢀ

power

ꢀ

Semiconductor

ꢀ

CO.,

ꢀ

LTD.

ꢀ

strives

ꢀ

to

ꢀ

supply

ꢀ

high

Ͳ

quality

ꢀ

high

Ͳ

reliability

ꢀ

products.

ꢀ

However,

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ  

semiconductor

ꢀ

products

ꢀ

fail

ꢀ

with

ꢀ

some

ꢀ

probability.

ꢀ

It

ꢀ

is

ꢀ

possible

ꢀ

that

ꢀ

these

ꢀ

probabilistic

ꢀ

failures

ꢀ

could

ꢀ

give

ꢀ

rise

ꢀ

to

ꢀ

accidents

ꢀ  

or

ꢀ

events

ꢀ

that

ꢀ

could

ꢀ

endanger

ꢀ

human

ꢀ

lives

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that

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could

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give

ꢀ

rise

ꢀ

to

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smoke

ꢀ

or

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fire,

ꢀ

or

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that

ꢀ

could

ꢀ

cause

ꢀ

damage

ꢀ

to

ꢀ

other

ꢀ  

property.

ꢀ

When

ꢀ

designing

ꢀ

equipment,

ꢀ

adopt

ꢀ

safety

ꢀ

measures

ꢀ

so

ꢀ

that

ꢀ

these

ꢀ

kinds

ꢀ

of

ꢀ

accidents

ꢀ

or

ꢀ

events

ꢀ

cannot

ꢀ

occur.

ꢀ

Such

ꢀ  

measures

ꢀ

include

ꢀ

but

ꢀ

are

ꢀ

not

ꢀ

limited

ꢀ

to

ꢀ

protective

ꢀ

circuits

ꢀ

and

ꢀ

error

ꢀ

prevention

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circuits

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for

ꢀ

safe

ꢀ

design,

ꢀ

redundant

ꢀ

design,

ꢀ  

and

ꢀ

structural

ꢀ

design.

ꢀ  

5,In

ꢀ

the

ꢀ

event

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that

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any

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or

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all

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Winsok

ꢀ

power

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products(including

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technical

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data,

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described

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or

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contained

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herein

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are

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controlled

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under

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any

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of

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applicable

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local

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export

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control

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laws

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and

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regulations,

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such

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products

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must

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not

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be

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exported

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without

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obtaining

ꢀ

the

ꢀ

export

ꢀ

license

ꢀ

from

ꢀ

the

ꢀ

authorities

ꢀ

concerned

ꢀ

in

ꢀ

accordance

ꢀ

with

ꢀ

the

ꢀ

above

ꢀ

law.

ꢀ  

6,

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No

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part

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of

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this

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publication

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may

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be

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reproduced

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transmitted

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in

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any

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form

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or

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by

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means,

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or

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mechanical,

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including

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recording,

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or

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information

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storage

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or

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retrieval

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system,

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or

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otherwise,

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without

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the

ꢀ

prior

ꢀ  

written

ꢀ

permission

ꢀ

of

ꢀ

Winsok

ꢀ

power

ꢀ

Semiconductor

ꢀ

CO.,

ꢀ

LTD.

ꢀ  

7,

ꢀ

Information

ꢀ

(including

ꢀ

circuit

ꢀ

diagrams

ꢀ

and

ꢀ

circuit

ꢀ

parameters)

ꢀ

herein

ꢀ

is

ꢀ

for

ꢀ

example

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only;

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it

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is

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guaranteed

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for

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volume

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production. Winsok

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believes

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information

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herein

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accurate

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reliable,

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no

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are

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made

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or

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implied

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regarding

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its

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use

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or

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any

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infringements

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of

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intellectual

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property

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rights

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or

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other

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rights

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of

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third

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parties.

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8,

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Any

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and

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all

ꢀ

information

ꢀ

described

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or

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contained

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herein

ꢀ

are

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subject

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to

ꢀ

change

ꢀ

without

ꢀ

notice

ꢀ

due

ꢀ

to

ꢀ

product/technology

ꢀ  

improvement,etc.

ꢀ

When

ꢀ

designing

ꢀ

equipment,

ꢀ

refer

ꢀ

to

ꢀ

the

ꢀ

“Delivery

ꢀ

Specification”

ꢀ

for

ꢀ

the

ꢀ

Winsok

ꢀ

power

ꢀ

product

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that

ꢀ

you

ꢀ ꢀ  

Intend

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to

ꢀ

use.

ꢀ  

9,

ꢀ

this

ꢀ

catalog

ꢀ

provides

ꢀ

information

ꢀ

as

ꢀ

of

ꢀ

Sep.2014. Specifications

ꢀ

and

ꢀ

information

ꢀ

herein

ꢀ

are

ꢀ

subject

ꢀ

to

ꢀ

change

ꢀ

without

ꢀ  

notice.

ꢀ