Winsok-Semicon-WSD30L40DN
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WS
D30L40DN
P
-Ch MOSFET
General Description
Product Summery
The
WSD30L40DN
is the highest performance
trench P-ch
MOSFETs with extreme high cell
density ,
which provide excellent RDSON and
gate charge
for most of the synchronous buck
converter applications
.
BVDSS
RDSON
1
1
m
Ω
ID
-30V
-4
0
A
Applications
The WSD30L40DN
meet the RoHS and Green
Product requirement 100% EAS guaranteed
with full
function reliability approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
DFN
3
X
3
-8
Pin Configuration
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
10s
Steady State
-30
Units
V
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
±
20
-4
0
V
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
A
–
25
A
-1
4.5
-1
0.5
–
12
A
–
9.8
A
–
70
81
A
EAS
Single Pulse Avalanche Energy
3
mJ
A
I
AS
Avalanche Current
Total Power Dissipation
4
Total Power Dissipation
4
–
18
32.9
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
W
W
℃
℃
3.6
3.1
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
Thermal Resistance Junction-Case
1
75
40
R
θ
JA
—
3.8
R
θ
JC
—
Page 1
Dec.2014
WS
D30L40DN
P
-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-30
—
—
—
-1.
3
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-
2
0
A
-0.0232
11
—
V/
℃
14
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
18
24
V
GS
=-4.5V , I
D
=-
10
A
V
GS(th)
Gate Threshold Voltage
-1.
8
4.6
—
–
2.3
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=-24V , V
GS
=0V , T
J
=25
℃
V
DS
=-24V , V
GS
=0V , T
J
=55
℃
-1
I
DSS
Drain-Source Leakage Current
uA
—
-5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
15
V
DS
=-5V , I
D
=-30A
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
9
—
Ω
Q
g
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
30
—
1.2
—
V
DS
=-15V , V
GS
=-4.5V , I
D
=-
2
0
A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
11
11
—
—
—
—
—
—
—
—
V
DD
=-15V , V
GS
=-10V , R
G
=
6
Ω
I
D
=-1A
,R
L
=15Ω
—
11
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
101
60
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
1380
280
217
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
V
DD
=-25V , L=0.
5
mH , I
AS
=-
18
A
78
—
—
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
–
20
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
–
70
—
—
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
—
—
-1
—
—
V
20
8
nS
nC
I
F
=-
2
0
A
,
dI/dt=100A/µs
,
T
J
=25
℃
Q
rr
—
Note :
1.
2
The data tested by surface mounted on a 1 inch
FR-4 board with 2OZ copper
,t
≦
10sec
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.
5
mH,I
AS
=-
18
A
4.The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Page
2
Dec.2014
WS
D30L40DN
P
-Ch MOSFET
Typical Characteristics
150
I
D
=-
20
A
125
100
75
50
25
0
V
GS
=-10V
V
GS
=-7V
V
GS
=-5V
V
GS
=-4.5V
V
GS
=-3V
0
0.5
1
1.5
2
2.5
3
3.5
4
-VDS ,
Drain-to-Source Voltage (V)
Fig.2 On-Resistance vs. G-S Voltage
Fig.1 Typical Output Characteristics
12
8
10
8
V
DS
=-15V
I
D
=-
2
0
A
6
T =150
T =25
℃
J
℃
J
4
4
2
0
0
0.00
0.25
0.50
0.75
1.00
0
9
18
27
36
45
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics of Reverse
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T ,Junction
Temperature (
)
℃
T ,
Junction Temperature (
J
)
℃
J
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Page
3
Dec.2014
WS
D30L40DN
P
-Ch MOSFET
1000.00
100.00
10.00
1.00
10000
1000
100
F=1.0MHz
Ciss
10us
100us
1ms
Coss
Crss
10ms
100ms
DC
0.10
T =25
℃
C
Single Pulse
0.01
10
0.1
1
10
100
1
5
9
13
17
21
25
-V
DS
(V)
-V
DS
, Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
S
I
NGLE PULSE
T
ON
T
D = T
ON
/T
T
J
peak = T
C
+ P
DM
x R
θ
JC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
Page
4
Dec.2014
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Sep.2014. Specifications
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