Winsok-Semicon-WSD30L68DN

WSD30L68DN  

P

-Ch MOSFET  

General Description  

Product Summery  

The

WSD30L68DN

is the highest performance  

trench P-ch

 

MOSFETs with extreme high cell  

density ,

 

which provide excellent RDSON and  

gate charge

 

for most of the synchronous buck  

converter applications

 

.  

BVDSS  

RDSON  

5.8

mΩ  

ID  

-30V  

–

68

A  

Applications  

The

WSD30L68DN

meet the RoHS and  

Green Product

 

requirement 100% EAS  

guaranteed with

 

full function reliability  

approved.  

z

High Frequency Point-of-Load Synchronous  

Buck Converter for MB/NB/UMPC/VGA  

z

Networking DC-DC Power System  

z

Load Switch  

Features  

z

Advanced high cell density Trench technology  

DFN

3

X

3

-8

Pin Configuration  

z

Super Low Gate Charge  

z

Excellent CdV/dt effect decline  

z

100% EAS Guaranteed  

z

Green Device Available  

Absolute Maximum Ratings  

Symbol  

Parameter  

Rating  

Units  

V

DS  

V

GS  

Drain-Source Voltage  

Gate-Sou

r

ce Voltage  

Continuous Drain Current, V

GS

@ -10V

1  

Continuous Drain Current, V

GS

@ -10V

1  

Pulsed Drain Current

2  

-30  

±

20  

–

68  

V

V

I

D

@T

C

=25

℃  

I

D

@T

C

=100

℃  

I

DM  

A

–

30  

A

–

180  

A

EAS  

Single Pulse Avalanche Energy

3  

125  

mJ  

A

I

AS  

Avalanche Current  

–

40  

P

D

@T

C

=25

℃  

P

D

@T

A

=25

℃  

T

STG  

Total Power Dissipation

4  

Total Power Dissipation

4  

69  

W

W

℃

℃

2.5  

Storage

T

e

mperature Range  

Operating Junction Temperature Range  

-55 to 150  

-55 to 150  

T

J  

Thermal Data  

Symbol  

R

θJA  

Parameter  

Typ.  

—  

Max.  

Unit  

℃

/W  

℃

/W  

℃

/W  

Thermal Resistance Junction-Ambient

1  

Thermal Resistance Junction-Ambient

1

(t

≤

10s)  

Thermal Resistance Junction-Case

1  

60  

R

θJA  

—  

20  

3.5  

R

θJC  

—  

Page 1  

Rev1.Mar.2022  

WSD30L68DN  

P

-Ch MOSFET  

Electrical Characteristics (T

J

=25

℃

, unless otherwise noted)  

Symbol  

Parameter  

Conditions  

V

GS

=0V , I

D

=-250uA  

Min.  

-30  

—  

—  

—  

-1.

3

 

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

Typ.  

—  

Max.  

—  

Unit  

V

BV

DSS  

Drain-Source Breakdown Voltage  

BVDSS Temperature Coefficient  

△

BV

DSS

/△

T

J  

Reference to 25

℃

, I

D

=-1mA  

V

GS

=-10V , I

D

=-

2

0

A  

-0.0232  

5.8  

—  

V/

℃  

7.8  

18  

R

DS(ON)  

Static Drain-Source On-Resistance

2  

m

Ω

 

10  

V

GS

=-4.5V , I

D

=-

10

A  

V

GS(th)  

Gate Threshold Voltage  

-1.

8  

4.6  

—  

–

2.

5  

—  

V

V

GS

=V

DS

, I

D

=-250uA  

△

V

GS(th)  

V

mV/

℃  

V

DS

=-24V , V

GS

=0V , T

J

=25

℃  

V

DS

=-24V , V

GS

=0V , T

J

=55

℃  

-1  

I

DSS  

Drain-Source Leakage Current  

uA  

—  

-5  

V

GS

=

±

20V , V

DS

=0V  

I

GSS  

gfs  

Gate-Source Leakage Current  

Forward Transconductance  

Gate Resistance  

—  

±

100  

—  

nA  

S

10  

V

DS

=-5V , I

D

=-

1

0A  

R

g  

V

DS

=0V , V

GS

=0V , f=1MHz  

1.2  

60  

—  

Ω

Q

g  

Total Gate Charge (-4.5V)  

Gate-Source Charge  

Gate-Drain Charge  

Turn-On Delay Time  

Rise Time  

—  

—  

V

DS

=-15V , V

GS

=-

10

V , I

D

=-

18

A  

9

nC  

ns  

Q

gs  

Q

gd  

T

d(on)  

T

r  

15  

—  

—  

—  

—  

—  

—  

—  

—  

16  

V

DD

=-15V , V

GS

=-10V ,  

—  

38  

R

G

=

3.3

Ω

I

D

=-1A  

T

d(off)  

T

f  

Turn-Off Delay Time  

Fall Time  

—  

50  

—  

—  

—  

12  

C

iss  

C

oss  

C

rss  

Input Capacitance  

3415  

245  

131  

V

DS

=-

20

V , V

GS

=0V , f=1MHz  

pF  

Output Capacitance  

Reverse Transfer Capacitance  

—  

Guaranteed Avalanche Characteristics  

Symbol  

Parameter  

Conditions  

Min.  

Typ.  

Max.  

Unit  

EAS  

Single Pulse Avalanche Energy

5  

V

DD

=-25V , L=0.

5

mH , I

AS

=-

4

0

A  

78  

—  

—  

mJ  

Diode Characteristics  

Symbol  

Parameter  

Conditions  

Min.  

—  

Typ.  

—  

Max.  

–

70  

Unit  

A

I

S  

I

SM  

V

SD  

t

rr  

Continuous Source Current

1,6  

Pulsed Source Current

2,6  

Diode Forward Voltage

2  

Reverse Recovery Time  

Reverse Recovery Charge  

V

G

=V

D

=0V , Force Current  

–

180  

—  

—  

A

V

GS

=0V , I

S

=-1A , T

J

=25

℃  

—  

—  

—  

-1

.2  

—  

V

22  

75  

nS  

nC  

I

F

=-

2

0

A

,

dI/dt=100A/µs

,

T

J

=25

℃  

Q

rr  

—  

—  

Note :  

1.

The data tested by surface mounted on a 1 inch

2

FR-4 board with 2OZ copper

,t

≦

10sec

.  

2.

The data tested by pulsed , pulse width

≦

300us , duty cycle

≦

2%  

3.

The EAS data shows Max. rating . The test condition is V

DD

=-25V,V

GS

=-10V,L=0.

5

mH,I

AS

=-

40

A  

4.

The power dissipation is limited by 150

℃

junction temperature  

5.

The Min. value is 100% EAS tested guarantee.  

6.

The data is theoretically the same as I

D

and I

DM

, in real applications , should be limited by total power dissipation.  

Page

2  

Rev1.Mar.2022  

WSD30L68DN  

P

-Ch MOSFET  

Typical Characteristics  

Fig.2 On-Resistance vs G-S Voltage  

Fig.1 Typical Output Characteristics  

Fig.3 Source Drain Forward Characteristics  

Fig.4 Gate-Charge Characteristics  

Fig.5 Normalized -V

GS(th)

vs T

J  

Fig.6 Normalized R

DSON

vs T

J  

Page

3  

Rev1.Mar.2022  

WSD30L68DN  

P

-Ch MOSFET  

Fig.7 Capacitance  

Fig.8 Safe Operating Area  

1

DUTY=0.5  

0.2  

0.1  

0.1  

0.05  

0.02  

0.01  

P

DM  

T

ON  

SINGLE  

0.01  

0.001  

T

D =

T

ON

/T  

T

Jpeak

=

T

C

+P

D

M

XR

θJC  

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

10  

t , Pulse Width (s)  

Fig.9 Normalized Maximum Transient Thermal Impedance  

Fig.11 Unclamped Inductive Switching Waveform  

Fig.10 Switching Time Waveform  

Page

4  

Rev1.Mar.2022  

Attention

ꢀ

 

1,

ꢀ

Any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

do

ꢀ

not

ꢀ

have

ꢀ

specifications

ꢀ

that

ꢀ

can

ꢀ

handle

ꢀ  

applications

ꢀ

that

ꢀ

require

ꢀ

extremely

ꢀ

high

ꢀ

levels

ꢀ

of

ꢀ

reliability,

ꢀ

such

ꢀ

as

ꢀ

life

Ͳ

support

ꢀ

systems,

ꢀ

aircraft’s

ꢀ

control

ꢀ

systems,

ꢀ

or

ꢀ  

other

ꢀ

applications

ꢀ

whose

ꢀ

failure

ꢀ

can

ꢀ

be

ꢀ

reasonably

ꢀ

expected

ꢀ

to

ꢀ

result

ꢀ

in

ꢀ

serious

ꢀ

physical

ꢀ

and/or

ꢀ

material

ꢀ

damage.

ꢀ ꢀ  

Consult

ꢀ

with

ꢀ

your

ꢀ

Winsok

ꢀ

power

ꢀ

representative

ꢀ

nearest

ꢀ

you

ꢀ

before

ꢀ

using

ꢀ

any

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ  

contained

ꢀ

herein

ꢀ

in

ꢀ

such

ꢀ

applications.

ꢀ  

2,Winsok

ꢀ

power

ꢀ

assumes

ꢀ

no

ꢀ

responsibility

ꢀ

for

ꢀ

equipment

ꢀ

failures

ꢀ

that

ꢀ

result

ꢀ

from

ꢀ

using

ꢀ

products

ꢀ

at

ꢀ

values

ꢀ

that

ꢀ

exceed,

ꢀ ꢀ  

even

ꢀ

momentarily,

ꢀ

rated

ꢀ

values

ꢀ

(such

ꢀ

as

ꢀ

maximum

ꢀ

ratings,

ꢀ

operating

ꢀ

condition

ꢀ

ranges,

ꢀ

or

ꢀ

other

ꢀ

parameters)

ꢀ

listed

ꢀ

in

ꢀ  

products

ꢀ

specifications

ꢀ

of

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein.

ꢀ  

3,

ꢀ

Specifications

ꢀ

of

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

stipulate

ꢀ

the

ꢀ

performance,

ꢀ  

characteristics,

ꢀ

and

ꢀ

functions

ꢀ

of

ꢀ

the

ꢀ

described

ꢀ

products

ꢀ

in

ꢀ

the

ꢀ

independent

ꢀ

state,

ꢀ

and

ꢀ

are

ꢀ

not

ꢀ

guarantees

ꢀ

of

ꢀ

the

ꢀ  

performance,

ꢀ

characteristics,

ꢀ

and

ꢀ

functions

ꢀ

of

ꢀ

the

ꢀ

described

ꢀ

products

ꢀ

as

ꢀ

mounted

ꢀ

in

ꢀ

the

ꢀ

customer’s

ꢀ

products

ꢀ

or

ꢀ  

equipment.

ꢀ

T

o

ꢀ

verify

ꢀ

symptoms

ꢀ

and

ꢀ

states

ꢀ

that

ꢀ

cannot

ꢀ

be

ꢀ

evaluated

ꢀ

in

ꢀ

an

ꢀ

independent

ꢀ

device,

ꢀ

the

ꢀ

customer

ꢀ

should

ꢀ

always

ꢀ  

evaluate

ꢀ

and

ꢀ

test

ꢀ

devices

ꢀ

mounted

ꢀ

in

ꢀ

the

ꢀ

customer’s

ꢀ

products

ꢀ

or

ꢀ

equipment.

ꢀ  

4,

ꢀ

Winsok

ꢀ

power

ꢀ

Semiconductor

ꢀ

CO.,

ꢀ

LTD.

ꢀ

strives

ꢀ

to

ꢀ

supply

ꢀ

high

Ͳ

quality

ꢀ

high

Ͳ

reliability

ꢀ

products.

ꢀ

However,

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ  

semiconductor

ꢀ

products

ꢀ

fail

ꢀ

with

ꢀ

some

ꢀ

probability.

ꢀ

It

ꢀ

is

ꢀ

possible

ꢀ

that

ꢀ

these

ꢀ

probabilistic

ꢀ

failures

ꢀ

could

ꢀ

give

ꢀ

rise

ꢀ

to

ꢀ

accidents

ꢀ  

or

ꢀ

events

ꢀ

that

ꢀ

could

ꢀ

endanger

ꢀ

human

ꢀ

lives

ꢀ

that

ꢀ

could

ꢀ

give

ꢀ

rise

ꢀ

to

ꢀ

smoke

ꢀ

or

ꢀ

fire,

ꢀ

or

ꢀ

that

ꢀ

could

ꢀ

cause

ꢀ

damage

ꢀ

to

ꢀ

other

ꢀ  

property.

ꢀ

When

ꢀ

designing

ꢀ

equipment,

ꢀ

adopt

ꢀ

safety

ꢀ

measures

ꢀ

so

ꢀ

that

ꢀ

these

ꢀ

kinds

ꢀ

of

ꢀ

accidents

ꢀ

or

ꢀ

events

ꢀ

cannot

ꢀ

occur.

ꢀ

Such

ꢀ  

measures

ꢀ

include

ꢀ

but

ꢀ

are

ꢀ

not

ꢀ

limited

ꢀ

to

ꢀ

protective

ꢀ

circuits

ꢀ

and

ꢀ

error

ꢀ

prevention

ꢀ

circuits

ꢀ

for

ꢀ

safe

ꢀ

design,

ꢀ

redundant

ꢀ

design,

ꢀ  

and

ꢀ

structural

ꢀ

design.

ꢀ  

5,In

ꢀ

the

ꢀ

event

ꢀ

that

ꢀ

any

ꢀ

or

ꢀ

all

ꢀ

Winsok

ꢀ

power

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products(including

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technical

ꢀ

data,

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services)

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described

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or

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contained

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herein

ꢀ

are

ꢀ  

controlled

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under

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any

ꢀ

of

ꢀ

applicable

ꢀ

local

ꢀ

export

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control

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laws

ꢀ

and

ꢀ

regulations,

ꢀ

such

ꢀ

products

ꢀ

must

ꢀ

not

ꢀ

be

ꢀ

exported

ꢀ

without

ꢀ  

obtaining

ꢀ

the

ꢀ

export

ꢀ

license

ꢀ

from

ꢀ

the

ꢀ

authorities

ꢀ

concerned

ꢀ

in

ꢀ

accordance

ꢀ

with

ꢀ

the

ꢀ

above

ꢀ

law.

ꢀ  

6,

ꢀ

No

ꢀ

part

ꢀ

of

ꢀ

this

ꢀ

publication

ꢀ

may

ꢀ

be

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reproduced

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or

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transmitted

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in

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any

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form

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or

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by

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any

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means,

ꢀ

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or

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mechanical,

ꢀ  

including

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photocopying

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and

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recording,

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or

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any

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information

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storage

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or

ꢀ

retrieval

ꢀ

system,

ꢀ

or

ꢀ

otherwise,

ꢀ

without

ꢀ

the

ꢀ

prior

ꢀ  

written

ꢀ

permission

ꢀ

of

ꢀ

Winsok

ꢀ

power

ꢀ

Semiconductor

ꢀ

CO.,

ꢀ

LTD.

ꢀ  

7,

ꢀ

Information

ꢀ

(including

ꢀ

circuit

ꢀ

diagrams

ꢀ

and

ꢀ

circuit

ꢀ

parameters)

ꢀ

herein

ꢀ

is

ꢀ

for

ꢀ

example

ꢀ

only;

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it

ꢀ

is

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not

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guaranteed

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for

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volume

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production. Winsok

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believes

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information

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herein

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is

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accurate

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and

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reliable,

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but

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no

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are

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made

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or

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implied

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regarding

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its

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use

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or

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any

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infringements

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of

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intellectual

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property

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rights

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or

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other

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rights

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of

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8,

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Any

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and

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all

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information

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described

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contained

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herein

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are

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subject

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to

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change

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without

ꢀ

notice

ꢀ

due

ꢀ

to

ꢀ

product/technology

ꢀ  

improvement,etc.

ꢀ

When

ꢀ

designing

ꢀ

equipment,

ꢀ

refer

ꢀ

to

ꢀ

the

ꢀ

“Delivery

ꢀ

Specification”

ꢀ

for

ꢀ

the

ꢀ

Winsok

ꢀ

power

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product

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that

ꢀ

you

ꢀ ꢀ  

Intend

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to

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use.

ꢀ  

9,

ꢀ

this

ꢀ

catalog

ꢀ

provides

ꢀ

information

ꢀ

as

ꢀ

of

ꢀ

Sep.2014. Specifications

ꢀ

and

ꢀ

information

ꢀ

herein

ꢀ

are

ꢀ

subject

ꢀ

to

ꢀ

change

ꢀ

without

ꢀ  

notice.

ꢀ